Sony CXG1014N Datasheet

CXG1014N
1.5 GHz Low Noise Amplifier/Down Conversion Mixer
Description
The CXG1014N is a low noise amplifier/down conversion mixer MMIC, designed using the Sony’s GaAs J-FET process.
Features
Low noise
NF=1.85 dB (Typ.) at 1.49 GHz
(low noise amplifier)
Low distortion
Input IP3=+2 dBm (Typ.) at 1.49 GHz
(mixer)
Low LO input power operation –15 dBm
Single 3.0 V power supply operation
16-pin SSOP package
Applications
1.5 GHz Japan digital cellular telephones
Structure
GaAs J-FET MMIC
Absolute Maximum Ratings (Ta=25 °C)
Supply voltage VDD 6V
Operating temperature Topr –35 to +85 °C
Power dissipation PD 150 mW
Current consumption
IDD (low noise amplifier) 20 mA IDD (LO amplifier) 10 mA IDD (mixer, IF amplifier) 20 mA
Input power PIN +5 dBm
Operating Condition
Supply voltage 3.0 V
16 pin SSOP (Plastic)
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
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E97408-TE
CXG1014N
Electrical Characteristics
VDD=3.0 V, fRF=1.49 GHz, fLO=1.62 GHz, PLO=–15 dBm, when 50 I/O matching; unless otherwise specified
(Ta=25 °C)
Item
Current consumption
Power gain Low noise Noise figure amplifier Input IP3
Isolation
Current consumption
Conversion gain
Mixer Noise figure
Input IP3
LO to RF leak level
Block Diagram
LNA RF
LOIN
Symbol
IDD GP NF
IIP3
ISO IDD GC NF
IIP3
PLK
IN
Min.
— 14 —
–7.5
30 —
6 — –2 —
LNA
MIX
Typ.
2.2 16
1.85 –3.5
35
3.8
8
8.5
2
–17
Max.
3.0 18
2.6 — —
5.5 10
10.5 —
–12
LNA RFOUT
MIX RFIN
Unit
mA
dB dB
dBm
dB
mA
dB
dB dBm dBm
Measurement condition
When no signal
When no signal
Pin Configuration
LNA RFIN
V
DD (LO AMP)
LO AMP IF AMP
IFOUT
116
OUT/VDD (LNA)
LNA RF
NC
CAP GND GND
LO
CAP
IN
16pin SSOP (PLASTIC)
NC NC GND GND MIX RF CAP IF OUT/V
IN
DD (MIX, IF AMP)
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