Sony CXG1009TN Datasheet
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E98712A8X
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any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
Absolute Maximum Ratings (Ta=25 °C)
• Control voltage Vctl (H) – Vctl (L) 6 V
• Control Current Ictl 2 mA
• Operating temperature Topr –35 to +85 °C
• Storage temperature Tstg –65 to +150 °C
Description
The CXG1009TN is a high Isolation SPDT (Single
Pole Dual Throw) switch MMIC for personal
communication, cable TV and so on.
This IC is designed using the Sony’s GaAs J-FET
process and operates at a single positive control
supply.
Features
• Single positive control supply operation
• Insertion Loss
0.7 dB (Typ.) @1.0 GHz, Vctl (H)=3 V
0.8 dB (Typ.) @2.0 GHz, Vctl (H)=3 V
• High Isolation
56 dB (Typ.) @1.0 GHz, Vctl (H)=3 V
47 dB (Typ.) @2.0 GHz, Vctl (H)=3 V
• 10pin TSSOP package (3.2 × 2.8 mm)
Applications
• Basestation Lo switching.
• Other Low Power SPDT applications requiring high
isolation (e.g. Cable TV).
Structure
GaAs J-FET MMIC
High Isolation SPDT Switch
10 pin TSSOP (Plastic)
CXG1009TN
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CXG1009TN
Electrical Characteristics
VCTL (L) =0 V, VCTL (H) =3 V, Pin=10 dBm (Ta=25 °C)
Item
Insertion Loss 1
Isolation 1
Insertion Loss 2
Isolation 2
VSWR
Switching Speed
Control Current
1 dB Compression
Symbol
IL1
ISO1
IL2
ISO2
VSWR
TSW
ICTL
P1dB
Condition
f ≤ 1 GHz
f ≤ 2 GHz
500 MHz ≤ f ≤ 2 GHz
f = 5 MHz
MIN. TYP. MAX. UNit
0.7 1.1 dB
52 56 dB
0.8 1.2 dB
43 47 dB
1.2 1.5
100 ns
60 200 µA
16 19 dBm
8 dBm
50 Ω source and load impedance
Block Diagram Package Outline/Pin Configuration
RF3
RF2
RF1
10pin TSSOP (PLASTIC)
GND
GND
RF2
RF3
GND
CTLB
RF1
GND
CTLA
GND
1 10
VCTLA
High
Low
VCTLB
Low
High
RF1-RF2 ON
RF1-RF3 OFF
RF1-RF2 OFF
RF1-RF3 ON
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