Sony CXA3299TN Datasheet

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E98Z30-TE

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any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

Absolute Maximum Ratings (Ta=25 °C)

• Supply voltage VCC 6V

• Operating temperature Topr –20 to +70 °C

• Storage temperature Tstg –55 to +150 °C

• Allowable power dissipation (on board)

PD 1000 mW

Operating Conditions

Supply voltage VCC 3.2 to 5.5 V

Description

The CXA3299TN is a wideband Pre-amplifier for

VTR head.

Features

• Operate on single +3.3 V power supply

• Low power consumption

Read : 58 mW

• Ultra small package

• Wideband (–3 dB) : 160 MHz (typ)

• Read amplifier emitter follower output featuring

380 times gain (typ).

• Low input capacitance : 3.0 pF

• Low input noise : 0.65 nV /√ Hz

Structure

Bipolar silicon monolithic IC

Wideband Pre-amplifier

10 pin TSSOP (Plastic)

CXA3299TN

Block Diagram and Pin Configuration

NC

HX

HY

GND

NC

RDY

RDX

V

CC

NC

NC

AMP

1

2

3

4

5

10

9

8

7

6

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CXA3299TN

Pin Description

No. Symbol Equivalent circuit Description

1
2

3
4

5
6

7
8

9

10

NC

H0X
H0Y

GND

NC

RDY
RDX

NC

VCC

Head.

Read amplifier output.

4k 4k

VCC

GND

100k

4

3

VCC

GND

7
8

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CXA3299TN

Electrical Characteristics (Unless otherwise specified, VCC=3.3 V, Ta=25 °C)

Item

Current consumption for read
Read amplifier differential

voltage gain
Frequency band width
(–3 dB)

Input referred noise voltage

Common mode rejection ratio

Supply voltage rejection ratio
Read data output offset voltage

for Read
Differential input capacitance

Differential input resistance

Output resistance

Read data output sink current

Read data output voltage

Symbol

ICC

AV

BW

EN

CMRR

PSRR

VOFFR

CIN

RIN

RRD

Isink

VRD

Test condition

Input voltage :
1 mVp-p, 300 kHz
Frequency at which AV lower
by 3 dB

Head impedance : 0 Ω
Common input voltage :

100 mVp-p, 20 MHz
Ripple voltage :
100 mVp-p, 20 MHz

VOFFR=VRDX–VRDY

Min. Typ. Max. Unit.

13.5 17.5∗22.5 mA

300 380 460 V/V

100 160 MHz

0.65 0.8

nV

√ Hz

50 dB

50 dB

–300 300 mV

3.0 4.5 pF

0.7 1.8 3.0 kΩ

48Ω

2.5 3.2 4.3 mA
VCC

V

–1.6

∗ Guaranteed until Ta=70 °C