Sony CXA2598M Datasheet

Description
The CXA2598M is a PDIC (photodetector IC) developed as a photodetector for the optical pickup of CD-R/RW. The photodiode and I-V amplifier operate at high speed (100MHz). When the strong light is emitted during write, the delay or ringing is not occurred because the limiter circuit is included in the I-V amplifier.
Focus servo: astigmatic method
Tracking servo: differential push-pull method
Features
I-V amplifier (current-voltage conversion circuit)
RF output of addition of A to D signals
Wide band (100MHz typ.)
Output limiter circuit
Small transparent molded package (SOP)
Applications
Optical pickup for CD-R/RW
Structure
Bipolar silicon monolithic IC
Absolute Maximum Ratings (Ta = 25°C)
Supply voltage VCC 5.5 V
Operating temperature Topr –10 to +70 °C
Storage temperature Tstg –40 to +85 °C
Allowable power dissipation PD 300 mW
Operating Condition
Supply voltage V
CC 4.5 to 5.5 V
PDIC for CD-R/RW
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E00342-PS
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
CXA2598M
PD-S-12 (Plastic)
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CXA2598M
Electrical and Optical Characteristics (VCC = 5.0V, VC = 2.5V, Ta = 25°C)
Note 1) Output offset voltage: Vc is the reference. Note 2) Output voltage: Vc is the reference. However, the offset voltage is excluded. Note 3) Output voltage, offset temperature drift, frequency response, group delay difference, settling time,
slew rate: Confirmation of design.
Note 4) Measurement by the optical input: Measurement is made by emitting the light to the center of each
photodiode.
Item Current consumption Output offset voltage (A to D) Output offset voltage (E to H) Output offset voltage (RF)
Output offset voltage difference
Offset temperature drift (A to H) Offset temperature drift (RF) Output voltage (A to D) Output voltage (E to H) Output voltage (RF) Maximum output voltage (A to H, RF)
Frequency response 1 (A to D)
Frequency response 1 (E to H)
Frequency response 1 (RF)
Frequency response 2 (A to D)
Frequency response 2 (RF)
Group delay difference (A to D) Group delay difference (RF) Settling time 1 (A to D) Settling time 1 (E to H) Settling time 2 (A to D) Slew rate (A to D) Slew rate (E to H)
Symbol ICC Voff Voff Voff
Voff
Voff/TVoff/T
VO VO Vo VO
fc
fc
fc
G
G
GdGd
Tset1 Tset1 Tset2 SR SR
Conditions In the dark In the dark, Vc reference In the dark, Vc reference In the dark, Vc reference (A + B) – (C + D), in the dark (A + D) – (B + C), in the dark (A + C) – (B + D), in the dark (E + G) – (F + H), in the dark In the dark In the dark
λ = 780nm, Po = 10µW λ = 780nm, Po = 10µW λ = 780nm, Po = 10µW λ = 780nm, Po = 500µW λ = 780nm
Po = 10µWDC, 4µWp-p 100kHz reference, –3dB
λ = 780nm Po = 10µWDC, 4µWp-p 100kHz reference, –3dB
λ = 780nm Po = 10µWDC, 4µWp-p 100kHz reference, –3dB
λ = 780nm Po = 10µWDC, 4µWp-p 35MHz/100kHz
λ = 780nm Po = 10µW
DC, 4µWp-p
35MHz/100kHz 100kHz to 35MHz 100kHz to 35MHz Output 500mV → 5mV Output 500mV → 5mV Output 500mV 0.5mV
— —
Min.
— –30 –25
–100
–20 –20 –20 –20
–100
–1.0
82 338 165
3.9
60
12
60
–0.5
–1.0
— 200
40
Typ.
16
0 0 0 0 0 0
0 — —
110 450 220
4.0
100
20
100
0
0.5
0.5
0.5 — — — — —
Max.
25 30 25
100
20 20 20 20
100
1.0 138 563 275
0.5
1.0
2
2 40 70 70 — —
Unit
mA mV mV mV mV mV mV mV
µV/°C
mV/°C
mV mV mV
V
MHz
MHz
MHz
dB
dB
ns ns ns ns
ns V/µs V/µs
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CXA2598M
Measurement Circuit
1
2
3
4
5
7
8
9
10
11
12
6
Vcc
Vcc
Ho
Ao
Bo
Fo
Vc
Vc
GND
Go
Do
Co
Eo
RF
All loads are 2.5k//20pF.
Photodetector Position
H
12
Top view
7
16
GD
A
CFE
B
Center of package
45 deg.
0.52
Reference surface
Surface that senses the indident light
(Unit : mm)
Deviation from the center of photodetector
X, Y : ±0.2 Z: ±0.2 θ : ±2°
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