Sony CXA2586M Datasheet

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E99430B01

Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

Absolute Maximum Ratings (Ta=25 °C)

• Supply voltage VCC 5.5 V

• Operating temperature Topr –10 to +70 °C

• Storage temperature Tstg –40 to +100 °C

• Allowable power dissipation

PD 300 mW

Operating Conditions

• Supply voltage1 VCC 4.5 to 5.5 V

• Supply voltage2 VC 1.5 to VCC–1.5 V

Structure

Bipolar silicon monolithic IC

Description

CXA2586M is a PDIC (photodetector IC) developed as a photodetector for the optical pickup of CD-ROM/DVD-ROM.

The photodiode and circuit blocks operate at high speed. (Typ. 100MHz)

• Focus servo : astigmatic method

• Tracking servo (CD)

: three-spot method

• Tracking servo (DVD) : differential phase detection method

Features

• High-speed I-V amplifier (current-voltage conversion circuit)

• High-speed photodiode

• Adding amplifier (addition of A to D)

• Compact transparent molded package (SOP)

Applications

Optical pickup for CD-ROM/DVD-ROM

PDIC for CD-ROM/DVD-ROM

PD-S-19-B (Plastic)

CXA2586M

Block Diagram and Pin Configuration

1 2 3 4 5

689

Fo VCC VC GND

VREF

Do Ao

Ao Bo Co Do

RF Bo Co

∗ The components marked by A, B, C, D, E and F are the photodiodes

(photo sensitivity. About 0.4A/W @650nm, 780nm)

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CXA2586M

Pin Description

Pin No.

2 4 1 5

Symbol

Ao Bo Co Do

Eo Fo

GND

VCC

I/O

2 4 5

300

200µA

37k

Description

Output of voltage signals converted from optical signals

Output of addition of Ao to Do

For dual power supply

: negative power supply

For a single power supply

: GND

For dual power supply

: GND

For a single power supply

: center voltage input

Positive power supply

Equivalent circuit

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CXA2586M

Electrical and Optical Characteristics (VCC=5.0 V, VC=2.5 V, Ta=25 °C)

Item Current consumption Output offset voltage (A to D) Output offset voltage (E, F) Output offset voltage (RF)

Output voltage difference

Sum of output offset voltages Output voltage (A to D) Output voltage (E, F) Output voltage (RF) Output voltage ratio (E, F/A to D) Output voltage ratio (RF/A to D) Maximum output voltage (A to D) Maximum output voltage (E, F) Maximum output voltage (RF)

Frequency response (A to D)

Frequency response (E, F)

Frequency response (RF)

Group delay difference (A to D) Group delay difference (RF) Output noise level (A to D) Output noise level (RF)

Symbol

ICC Voff Voff Voff

∆Voff

Voffs

Vo VOR VOR

∆ Gd ∆ Gd

Conditions In the dark In the dark, Vc reference In the dark, Vc reference In the dark, GND reference A-B, in the dark C-D, in the dark (A+C) – (B+D), in the dark E-F, in the dark A+B+C+D, in the dark

λ=650 nm, 780 nm, Po=10 µW λ=650 nm, 780 nm, Po=10 µW λ=650 nm, 780 nm, Po=10 µW λ=650 nm, 780 nm, Po=10 µW λ=650 nm, 780 nm, Po=10 µW λ=650 nm, 780 nm, Po=100 µW λ=650 nm, 780 nm, Po=100 µW λ=650 nm, 780 nm, Po=100 µW λ=650 nm, 780 nm

Po=10 µWDC, 4 µWp-p 100 kHz reference, –3 dB λ=650 nm,780 nm Po=10 µWDC, 4 µWp-p 100 kHz reference, –3 dB λ=650 nm, 780 nm Po=10 µWDC, 4 µWp-p 100 kHz reference, –3 dB 100 kHz to 50 MHz 100 kHz to 50 MHz f=50 MHz, RBW=30 kHz f=50 MHz, RBW=30 kHz

Min. Typ. Max. Unit

— 15 20 mA –25 0 25 mV –15 0 15 mV

1.25 1.4 1.55 V

–20 0 20 mV –20 0 20 mV –20 0 20 mV –15 0 15 mV

–100 0 100 mV

180 246 312 mV 312 447 581 mV 302 432 561 mV

1.71 1.81 1.90 —

1.67 1.76 1.84 —

3.8 4.0 — V

70 100 — MHz

15— MHz

80 105 — MHz

— 15ns

—–87 –82 dBm

—–76 –71 dBm

Note 1) Output offset voltage: Vc is the reference for A to F, GND for RF. Note 2) Output voltage: Vc is the reference for A to F, GND for RF. However, the offset voltage is excluded. Note 3) Output voltage, frequency response, group delay, output noise level: Confirmation of design. Note 4) Measurement by the optical input: Measurement is made by emitting the light to the center of each

photodiode. In regard of the frequency response of A to D and RF, the same response can be obtained by emitting the light to the A to D photodiodes evenly.

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