Sony CXA1915AN Datasheet
I-V Photo IC for MiniDisc
Description
The CXA1915AN is a photo IC developed as a
photo detector for the optical pickup of MiniDisc. The
photodiode for RF signal detection has a built-in I-V
amplifier and features low output impedance for
stable output.
• Focus servo: astigmatic method
• Tracking servo: three-spot method
• Magneto optical signal (RF signal) detection:
Wollaston prism method
Features
• I-V amplifier (current-voltage conversion circuit)
• Ultra-compact transparent molded package
(SSOP)
CXA1915AN
16 pin PD-S (Plastic)
Absolute Maximum Ratings (Ta=25°C)
• Supply voltage VCC 6V
•Operating temperature Topr –20 to 90 °C
• Storage temperature Tstg –40 to 90 °C
• Allowable power dissipation
PD 150 mW
Applications
Optical pickup for MiniDisc
Structure
Bipolar silicon monolithic IC
Recommended Operating Conditions
• Supply voltage VCC 2.5 to 5.5 V
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
—1—
E94X43-TE
Photo Detector Pattern Dimensions
160
CXA1915AN
J
160
Package center
0.45 mm from package center
2.20 mm from reference side
Circuit Block Diagram
1.75 mm from reference side
5
F
70
5
AB
CD
135
35
135
E
150
I
(Unit: µm)
145
Vcc
12
11
R
J
I
R
1 2 4
Vc GND
Io
R=115kΩ
A, B, C, D, E, F, I, and J are photodiodes.
10
B
3
—2—
GND
F
AoJo Bo
9
8
A
C
Eo
7
E
D
5 6
CoFo
Do
CXA1915AN
Electrical and Optical Characteristics (VCC=3.0V, VC=1.5V, Ta=25°C)
Item Symbol Conditions Min. Typ. Max. Unit
Current consumption ICC In the dark 2.2 3.2 mA
Dark current (A to F) ID In the dark 4.0 nA
Optical sensitivity (A to F) S PO=5µW, λ = 780nm 0.3 0.4 A/W
Output offset voltage (I, J) Voff In the dark -10 5.5 10
Output offset voltage difference (I-J) ∆Voff In the dark -10 0 10 mV
Output voltage (I, J) VO PO=5µW, λ = 780nm 100 130 160
Maximum output voltage (I, J) Vomax PO=100µW, λ = 780nm 2.7 2.8 V
Frequency response (I, J) fc 100kHz reference, -3 dB 1.8 2.3 MHz
Note)
1. Vc is reference for output voltage and output offset voltage.
2. GND is reference for maximum output voltage.
3. Output voltage and frequency response are subject to conformation of design.
Measurement Circuit
3.0V
1.5V
100pF
12
Vcc
Vc GND
1 2 4
ΩΩ ΩΩ
11
Io
10
3
9
GND
8
AoJo Bo
CoFo
5 6
1k1k1k4k
7
Eo
Do
100pF
4k 1k 1k 1k
Ω ΩΩΩ
—3—
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