Sony 3SK166A Datasheet

GaAs N-channel Dual Gate MES FET

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Description

The 3SK166A is an N-channel dual gate GaAs
MES FET for UHF band low-noise amplification. The
circuit matching is easier to be made for all UHF
band, resulting in the excellent performance, due to
the optimal design of input impedance.

Features

• Low voltage operation

• Low noise: NF = 1.2dB (typ.) at 800MHz

• High gain: Ga = 20dB (typ) at 800MHz

• High stability

Application

UHF band amplifier, oscillator

3SK166A

Structure

GaAs N-channel dual-gate metal semiconductor field-effect transistor

Absolute Maximum Ratings (Ta = 25°C)

• Drain to source voltage VDSX 8V

•Gate 1 to source voltage VG1S –6 V

• Gate 2 to source voltage VG2S –6 V

• Drain current ID 80 mA

• Allowable power dissipation PD 150 mW

• Channel temperature Tch 150 °C

• Storage temperature Tstg –55 to +150 °C

Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

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E96Y11-PS

3SK166A

Electrical Characteristics (Ta = 25°C)

Item

Drain cut-off current

Gate 1 to source current

Gate 2 to source current

Drain saturation current

Gate 1 to source cut-off voltage

Gate 2 to source cut-off voltage

Forward transfer admittance

Input capacitance
Feedback capacitance
Noise figure

Associated gain

∗

IDSS classification

Symbol Condition Min. Typ. Max. Unit

VDS = 8V

IDSX

VG1S = –4V

100

VG2S = 0V
VG1S = –5V

IG1SS

VG2S = 0V

–20

VDS = 0V
VG2S = –5V

IG2SS

VG1S = 0V

–20

VDS = 0V
VDS = 5V

IDSS

VG1S = 0V

20

80

VG2S = 0V
VDS = 5V

VG1S (OFF)

ID = 100µA

–1

–4

VG2S = 0V
VDS = 5V

VG2S (OFF)

ID = 100µA

–1

–4

VG1S = 0V
VDS = 5V

gm

ID = 10mA
VG2S = 1.5V

25

40

f = 1kHz

Ciss
Crss
NF

Ga

VDS = 5V
ID = 10mA
VG2S = 1.5V
f = 1MHz

VDS = 5V
ID = 10mA
VG2S = 1.5V
f = 800MHz

18

1.3
25

1.2
20

2.0
40

2.5

µA

µA

µA

mA

V

V

ms

pF

fF

dB
dB

Product name classification

3SK166A-0
3SK166A-2

IDSS RANK
20 to 80mA
45 to 80mA

Typical Characteristics (Ta = 25°C)

ID vs. VDS

100

(VG2S = 1.5V)

80

60

40

– Drain current [mA]

D

I

20

0

02468

VDS – Drain to source voltage [V]

VG1S
= 0V

–0.2V
–0.4V
–0.6V

–0.8V
–1.0V

–1.2V
–1.4V

–1.6V

ID vs. VG1S

100

(VDS = 5V)

80

70

60

– Drain current [mA]

D

I

40

20

–2.0 –1.5 –1.0 –0.5 0

G1S – Gate 1 to source voltage [V]

V

V

G2S

= 1.5V

1.0V

0.5V

0V

–0.5V

–1.5V

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