Sony 3SK165A Datasheet

Description

The 3SK165A is an N-channel dual gate GaAs
MES FET for UHF band low-noise amplification. This
FET is suitable for a wide range of applications
including cellular, cordless phone.

Features

• Low voltage operation

• Low noise: NF = 1.2dB (typ.) at 800MHz

• High gain: Ga = 20dB (typ) at 800MHz

• High stability

Application

UHF band amplifier, mixer and oscillator

Structure

GaAs N-channel dual-gate metal semiconductor field-effect transistor

Absolute Maximum Ratings (Ta = 25°C)

• Drain to source voltage VDSX 8V

•Gate 1 to source voltage VG1S –6 V

• Gate 2 to source voltage VG2S –6 V

• Drain current ID 80 mA

• Allowable power dissipation PD 150 mW

• Channel temperature Tch 150 °C

• Storage temperature Tstg –55 to +150 °C

– 1 –

3SK165A

E96Y12-PS

GaAs N-channel Dual Gate MES FET

Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

For the availability of this product, please contact the sales office.

– 2 –

3SK165A

Typical Characteristics (Ta = 25°C)

Electrical Characteristics (Ta = 25°C)

Item

Drain cut-off current

Gate 1 to source current

Gate 2 to source current

Drain saturation current

Gate 1 to source cut-off voltage

Gate 2 to source cut-off voltage

Forward transfer admittance

Input capacitance
Feedback capacitance
Noise figure

Associated gain

IDSX

IG1SS

IG2SS

IDSS

VG1S (OFF)

VG2S (OFF)

gm

Ciss
Crss
NF

Ga

VDS = 8V
VG1S = –4V
VG2S = 0V

VG1S = –4V
VG2S = 0V
VDS = 0V

VG2S = –4V
VG1S = 0V
VDS = 0V

VDS = 5V
VG1S = 0V
VG2S = 0V

VDS = 5V
ID = 100µA
VG2S = 0V

VDS = 5V
ID = 100µA
VG1S = 0V

VDS = 5V
ID = 10mA
VG2S = 1.5V
f = 1kHz

VDS = 5V
ID = 10mA
VG2S = 1.5V
f = 1MHz

VDS = 5V
ID = 10mA
VG2S = 1.5V
f = 800MHz

20

–1

–1

15

16

22

0.5

7.5

1.2
20

100

–20

–20

55

–4

–4

1.0
25

2.5

µA

µA

µA

mA

V

V

ms

pF

fF

dB
dB

Symbol Condition Min. Typ. Max. Unit

∗

IDSS classification
Product name classification

3SK165A-0
3SK165A-1

IDSS RANK
20 to 55mA
20 to 35mA

ID vs. VDS

50

(VG2S = 1.5V)

40

30

20

– Drain current [mA]

D

I

10

0

0 2 4 6 8

V

DS – Drain to source voltage [V]

VG1S
= 0V

–0.2V
–0.4V
–0.6V

–0.8V
–1.0V

–1.2V
–1.4V

–1.6V
–1.8V

ID vs. VG1S

50

(VDS = 5V)

40

30

20

– Drain current [mA]

D

I

10

0

–2.0 –1.5 –1.0 –0.5 0

V

G1S – Gate 1 to source voltage [V]

V

G2S

= 1.5V

1.0V

0.5V

0V

–0.5V

–1.0V

–1.5V