Sony 1T413 Datasheet

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E99220-TE

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any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

Absolute Maximum Ratings (Ta=25 °C)

• Reverse voltage VR 15 V

• Operating temperature Topr –20 to +75 °C

• Storage temperature Tstg –65 to +150 °C

Description

The 1T413 is a variable capacitance diode
designed for the digital cellular phone VCO using a
super-small-miniature flat package (SSVC).

Features

• Super-small-miniature flat package

• Low series resistance: 0.40 Ω Max. (f=470 MHz)

• Large capacitance ratio: 2.90 Typ. (C1/C4)

• Small leakage current: 10 nA Max. (VR=15 V)

Applications

Digital cellular phone VCO

Structure

Silicon epitaxial planar type diode

Variable Capacitance Diode

M-290

1T413

Electrical Characteristics (Ta=25 °C)

Item

Reverse current
Diode capacitance
Capacitance ratio

Series resistance

Symbol

IR
C1
C4

C1/C4

rs

Conditions
VR=15 V
VR=1 V, f=1 MHz
VR=4 V, f=1 MHz

VR=1 V, f=470 MHz

Min. Typ. Max. Unit

10.0 nA

15.0 17.5 pF

5.1 6.1 pF

2.5 2.9

0.40 Ω

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1T413

Example of Representative Characteristics

100

10

1

C-Diode capacitance (pF)

VR-Reverse voltage (V)

0.1 1

Forward voltage vs. Ambient temperature

0.80

0.90

0.70

0.60
–20

VF-Forward voltage (V)

Ta-Ambient temperature (°C)

I

F=1mA

0 20406080

Reverse current vs. Ambient temperatureDiode capacitance vs. Reverse voltage

IR-Reverse current (pA)

Ta-Ambient temperature (°C)

–20 0 20 40 60 80

Reverse voltage vs. Ambient temperature

30

35

25

20

–20

VR-Reverse voltage (V)

Ta-Ambient temperature (°C)

I

R=10µA

0 20406080

5

20

50

2

0.2 0.5 2 5 10

10

1

0.1

VR=15V

Ta=25°C