Sony 1T412 Datasheet
Variable Capacitance Diode
Description
The 1T412 is a variable capacitance diode
designed for electronic tuning of BS tuners using a
super-small-miniature flat package (SSVC).
Features
• Super-small-miniature flat package
• Low series resistance: 1.8 Ω Max. (f=470 MHz)
• Large capacitance ratio: 5.7 Typ. (C2/C25)
• Small leakage current: 10 nA Max. (VR=28 V)
• Capacitance deviation in a matching group:
within 5 %
Applications
Electronic tuning of BS tuners
1T412
M-290
Absolute Maximum Ratings (Ta=25 °C)
• Reverse voltage VR 30 V
• Peak reverse voltage VRM 35 V
(RL ≥ 10 kΩ)
• Operating temperature Topr –20 to +75 °C
• Storage temperature Tstg –65 to +150 °C
Structure
Silicon epitaxial planar type diode
Electrical Characteristics (Ta=25 °C)
Item
Reverse current
Diode capacitance
Capacitance ratio
Series resistance
Capacitance
deviation in a
matching group
Symbol
IR
C2
C25
C2/C25
rs
∆C
Conditions
VR=28 V
VR=2 V, f=1 MHz
VR=25 V, f=1 MHz
VR=1V, f=470 MHz
VR=2 to 25 V, f=1 MHz
Min.
3.27
0.57
5.0
Typ.
5.7
1.1
Max.
10
4.51
0.77
1.8
5
Unit
nA
pF
pF
Ω
%
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
—1—
E96147A67-TE
1T412
Diode capacitance vs. Reverse voltage
10
5
2
1
0.5
C-Diode capacitance (pF)
0.2
0.1
12 51020 50
V
R-Reverse voltage (V)
Ta=25°C
Reverse current vs. Ambient temperature
100
10
-Reverse current (pA)
R
I
1
VR=28V
0.90
Forward voltage vs. Ambient temperature
0.80
0.70
-Forward voltage (V)
F
V
0.60
–20 0 20 40 60 80
Ta-Ambient temperature (°C)
IF=1mA
0.1
–20 0 20 40 60 80
Ta-Ambient temperature (°C)
Reverse voltage vs. Ambient temperature
45
40
35
-Reverse voltage (V)
R
V
30
–20 0 20 40 60 80
Ta-Ambient temperature (°C)
IR=10µA
—2—
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