Sony 1T411 Datasheet

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E95304B83-TE

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Absolute Maximum Ratings (Ta=25 °C)

• Reverse voltage VR 30 V

• Peak reverse voltage VRM 35 V

(RL≥10 kΩ)

• Operating temperature Topr –20 to +75 °C

• Storage temperature Tstg –65 to +150 °C

Description

The 1T411 is a variable capacitance diode
designed for analog cellular phone and it has a
super miniature package.

Features

• Super miniature package

• Small series resistance 0.40 Ω Max. (f=470 MHz)

• Large capacitance ratio 6.5 Typ. (C2/C25)

• Capacitance deviation in a matching group

3 % (max.)

Structure

Silicon epitaxial planar-type diode

Variable Capacitance Diode

M-235

1T411

Electrical Characteristics (Ta=25 °C)

Item

Reverse current
Diode capacitance
Capacitance ratio

Series resistance
Capacitance deviation in a
matching group

Symbol

IR

C2

C25

C2/C25

rs

∆C

Conditions
VR=28 V
VR=2 V, f=1 MHz
VR=25 V, f=1 MHz
f=1 MHz
CD=14 pF, f=470 MHz

VR=2 to 25 V, f=1 MHz

Min. Typ. Max. Unit

20 nA

26.37 29.50 33.05 pF

4.030 4.400 4.807 pF

6.5

0.35 0.40 Ω
3%

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1T411

Reverse current vs. Ambient temperature

Forward voltage vs. Ambient temperature

Diode capacitance vs. Reverse voltage

V

R-Reverse voltage (V)

100

50

20

10

5

2

1

C-Diode capacitance (pF)

1 2 5 10 20 50

Ta=25°C

VR=28V

1.000

0.100

0.010

0.001

I

R

-Reverse current (nA)

Ta-Ambient temperature (°C)

20 40 60 80–20 0

IF=1mA

Ta-Ambient temperature (°C)

806040200–20

0.80

0.70

0.60

0.50

V

F

-Forward voltage (V)

Reverse voltage vs. Ambient temperature

IR=10µA

Ta-Ambient temperature (°C)

806040200–20

40

35

30

25

V

R

-Reverse voltage (V)