Sony 1T410 Datasheet

Variable Capacitance Diode

Description

The 1T410 is a variable capacitance diode
designed for electronic tuning of BS/CS tuners using
a super-small-miniature flat package (SSVC).

Features

• Super-small-miniature flat package

• Low series resistance: 1.5 Ω Max. (f=470 MHz)

• Large capacitance ratio: 12.0 Typ. (C1/C25)

• Small leakage current: 10 nA Max. (VR=25 V)

• Capacitance deviation in a matching group:

within 6 %

Applications

Electronic tuning of BS/CS tuners

1T410

M-290

Absolute Maximum Ratings (Ta=25 °C)

• Reverse voltage VR 30 V

• Peak reverse voltage VRM 35 V

(RL ≥ 10 kΩ)

• Operating temperature Topr –20 to +75 °C

• Storage temperature Tstg –65 to +150 °C

Structure

Silicon epitaxial planar type diode

Electrical Characteristics (Ta=25 °C)

Item

Reverse current
Reverse voltage

Diode capacitance
Capacitance ratio

Series resistance
Capacitance
deviation in a
matching group

Symbol

IR
VR
C1

C25

C1/C25

rs

∆C

Conditions

VR=25 V
IR=1 µA
VR=1 V, f=1 MHz
VR=25 V, f=1 MHz

VR=5 V, f=470 MHz

VR=1 to 25 V, f=1 MHz

Min.

30

5.96

0.46

10.0

Typ.

12.0

1.30

Max.

10

7.16

0.60

1.50

6

Unit

nA

v
pF
pF

Ω

%

Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

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E96145A67-TE

1T410

Diode capacitance vs. Reverse voltage

10

5

2

1

0.5

C-Diode capacitance (pF)

0.2

0.1
12 51020 50

V

R-Reverse voltage (V)

Ta=25°C

Reverse current vs. Ambient temperature

100

10

-Reverse current (pA)

R

I

1

VR=28V

0.90

Forward voltage vs. Ambient temperature

0.80

0.70

-Forward voltage (V)

F

V

0.60
–20 0 20 40 60 80

Ta-Ambient temperature (°C)

IF=1mA

0.1
–20 0 20 40 60 80

Ta-Ambient temperature (°C)

Reverse voltage vs. Ambient temperature

45

40

35

-Reverse voltage (V)

R

V

30

–20 0 20 40 60 80

Ta-Ambient temperature (°C)

IR=10µA

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