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E96144A98-TE
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Absolute Maximum Ratings (Ta=25 °C)
• Reverse voltage VR 15 V
• Operating temperature Topr –35 to +85 °C
• Storage temperature Tstg –65 to +150 °C
Description
The 1T409 is a variable capacitance diode
designed for UHF-band VCO using a super-smallminiature flat package (SSVC).
Features
• Super-small-miniature flat package
• Low series resistance: 0.4 Ω Max. (f=470 MHz)
• Large capacitance ratio: 2.5 Typ. (C2/C10)
• Small leakage current: 3 nA Max. (VR=15 V)
Applications
• UHF-band VCO
• Local oscillator for cordless telephone
• Local oscillator for cellular equipment
Structure
Silicon epitaxial planar type diode
Variable Capacitance Diode
M-290
1T409
Electrical Characteristics (Ta=25 °C)
Item
Reverse current
Diode capacitance
Capacitance ratio
Series resistance
Symbol
IR
C2
C10
C2/C10
rs
Conditions
VR=15 V
VR=2 V, f=1 MHz
VR=10 V, f=1 MHz
VR=5V, f=470 MHz
Min.
14.26
5.46
2.2
Typ.
2.5
0.3
Max.
3
15.96
6.46
0.4
Unit
nA
pF
pF
Ω
1 2 5 10 20 50
1
2
5
10
20
50
100
Diode capacitance vs. Reverse voltage
V
R-Reverse voltage (V)
C-Diode capacitance (pF)
Ta=25°C
1
10
Reverse current vs. Ambient temperature
–20 0 20 40 60 80
Ta-Ambient temperature (°C)
I
R
-Reverse current (pA)
0.1
0.70
0.90
Forward voltage vs. Ambient temperature
–20 0 20 40 60 80
Ta-Ambient temperature (°C)
V
F
-Forward voltage (V)
IF=1mA
0.80
0.60
25
35
Reverse voltage vs. Ambient temperature
–20 0 20 40 60 80
Ta-Ambient temperature (°C)
V
R
-Reverse voltage (V)
30
20
VR=15V
I
R=10µA