Sony 1T379 Datasheet

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E94205B82-TE

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Absolute Maximum Ratings (Ta=25 °C)

• Reverse voltage VR 30 V

• Maximum reverse voltage VRM 35 V

(RL≥10 kΩ)

• Operating temperature Topr –20 to +75 °C

• Storage temperature Tstg –65 to +150 °C

Description

The 1T379 is a variable capacitance diode
designed for the electronic tuning of BS and CS
tuners, and it has a super miniature package.

Features

• Super miniature package

• Small series resistance 1.50 Ω Max. (f=470 MHz)

• Large capacitance ratio 12.0 Typ. (C1/C25)

• Small capacitance 0.60 pF Max. (VR=25 V)

Structure

Silicon epitaxial planar-type diode

Silicon Variable Capacitance Diode for Electronic Tuning of BS and CS Tuners

M-235

1T379

Electrical Characteristics (Ta=25 °C)

Item
Reverse current
Reverse voltage

Diode capacitance
Capacitance ratio

Series resistance
Capacitance deviation in a
matching group

Symbol

IR
VR
C1

C25

C1/C25

rs

∆C

Conditions
VR=25 V
IR=1 µA
VR=1 V, f=1 MHz
VR=25 V, f=1 MHz
f=1 MHz
VR=5 V, f=470 MHz

VR=1 to 25 V, f=1 MHz

Min. Typ. Max. Unit

10 nA

30 V

6.0 7.2 pF

0.5 0.6 pF

10.0 12.0

1.50 Ω
6%

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1T379

Diode capacitance vs. Reverse voltage

f=1MHz Ta=25°C

10.0

1.0

0.1

C-Diode capacitance (pF)

VR-Reverse voltage

1 10 100

Diode capacitance vs. Ambient temperature

Diode capacitance

C (Ta)

C (25°C)

Ta-Ambient temperature (°C)

-20 0 20 40 60 80

1.03

1.02

1.01

1.00

0.99

0.98

Thermal coefficient of diode capacitance

V

R-Reverse voltage (V)

Thermal coefficient of diode capacitance (ppm/°C)

1000

100

50

1 10

Forward voltage vs. Ambient temperature

V

F

-Forward voltage (V)

Ta-Ambient temperature (°C)

0.90

0.86

0.82

0.78

0.74

0.70

-20 0 20 40 60

f=1MHz

V

R=1V

V

R=2V

V

R=7V

V

R=15V

V

R=25V

I

F=1mA

100

80