Sony 1T369 Datasheet
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E92903A82-TE
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Absolute Maximum Ratings (Ta=25 °C)
• Reverse voltage VR 34 V
• Operating temperature Topr –20 to +75 °C
• Storage temperature Tstg –65 to +150 °C
Description
The 1T369 is a super miniature package variable
capacitance diode for a wide-band CATV.
Features
• Super miniature package
• Small series resistance rs=1.0 Ω (Max.)
• Large capacitance ratio C2/C25=15.5 (Typ.)
• Capacitance deviation in a matching group
2.0 % (Max.)
Applications
Electronic tuning of wide-band CATV
Structure
Silicon epitaxial planar type diode
Silicon Variable Capacitance Diode
M-235
1T369
Electrical Characteristics (Ta=25 °C)
Item
Reverse current
Reverse voltage
Diode capacitance
Capacitance ratio
Series resistance
Capacitance deviation in a
matching group
Symbol
IR
VR
C2
C25
C2/C25
rs
∆C
Conditions
VR=28 V
IR=1 µA
VR=2 V, f=1 MHz
VR=25 V, f=1 MHz
CD=14 pF, f=470 MHz
C2 to C25
Min. Typ. Max. Unit
10 nA
34 V
39.5 43.4 47.4 pF
2.60 2.80 3.03 pF
14.5 15.5 17.0
1.0 Ω
2.0 %
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1T369
Diode capacitance vs. Ambient temperature
Ta-Ambient temperature (°C)
1.03
1.02
1.01
1.00
0.99
0.98
–20 0 20 40 60 80
Diode capacitance vs. Reverse voltage
C-Diode capacitance (pF)
VR-Reverse voltage (V)
100
10
1
1 10 100
Ta=25°C
f=1MHz
V
R=2V
V
R=25V
V
R=7V
V
R=15V
f=1MHz
Diode capacitance
C (Ta)
C (25°C)
Reverse breakdown voltage vs. Ambient temperature
Ta-Ambient temperature (°C)
50
45
40
35
30
25
–20 0 20 40 60 80
Temperature coefficient of diode capacitance
Temperature coefficient (ppm/°C)
VR-Reverse voltage (V)
1000
100
200
500
50
1 10 50 100
f=1MHz
I
R=10µA
VR-Reverse voltage (V)
Example of Representative Characteristics
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