Sony 1T367 Datasheet

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E92253A82-TE

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any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

Absolute Maximum Ratings (Ta=25 °C)

• Reverse voltage VR 15 V

• Operating temperature Topr –35 to +85 °C

• Storage temperature Tstg –65 to +150 °C

Description

The 1T367 is a variable capacitance diode housed
in super miniature package, designed for UHF band
VCO.

Features

• Super miniature package

• Small series resistance

rs=0.3 Ω (Typ.)

Applications

• UHF band VCO

• Local oscillator for telephone

• Local oscillator for cellular systems

Structure

Silicon epitaxial planar type diode

UHF band VCO

M-235

1T367

Electrical Characteristics (Ta=25 °C)

Item

Reverse current
Diode capacitance
Capacitance ratio

Series resistance

Symbol

IR

C2

C10

C2/C10

rs

Conditions
VR=15 V
VR=2 V, f=1 MHz
VR=10 V, f=1 MHz

VR=5 V, f=470 MHz

Min. Typ. Max. Unit

3nA

14.3 15.0 16.0 pF

5.5 6.0 6.5 pF

2.2 2.5

0.3 0.4 Ω

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1T367

Example of Representative Characteristics

Diode capacitance vs. Reverse voltage

C-Diode capacitance (pF)

VR-Reverse voltage (V)

50

20

10

5

2

1

1 2 5 10 20 50

Ta=25°C
f=1MHz

Diode capacitance vs. Operating ambient temperature

C (Ta)/C (25°C) Diode capacitance

Ta-Operating ambient temperature (°C)

1.03

1.02

1.01

1.00

0.99

0.98
–20 0 20 40 60 80

f=1MHz

Temperature coefficient of diode capacitance

Temperature coefficient (ppm/°C)

VR-Reverse voltage (V)

500

200

100

50

1 2 5 10 20

f=1MHz

VR=2V

V

R=7V

VR=10V