Sony 1T365 Datasheet
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E91539A82-TE
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any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
Absolute Maximum Ratings (Ta=25 °C)
• Reverse voltage VR 30 V
• Maximum reverse voltage VRM 35 V
(RL≥10 kΩ)
• Operating temperature Topr –20 to +75 °C
• Storage temperature Tstg –65 to +150 °C
Description
The 1T365 is a variable capacitance diode
contained in super miniature package, and used for
electronic-tuning of BS tuner.
Features
• Super miniature package
• Small capacitance 0.7 pF Typ. (VR=25 V)
• Low leakage current 10 nA Max. (VR=28 V)
• Small serial resistance 1.1 Ω Typ.
(VR=1 V, f=470 MHz)
Structure
Silicon epitaxial planar type diode
Silicon Variable Capacitance Diode
M-235
1T365
Electrical Characteristics (Ta=25 °C)
Item
Reverse current
Diode capacitance
Capacitance ratio
Serial resistance
Capacitance deviation in a
matching group
Symbol
IR
C2
C25
C2/C25
rs
∆C
Conditions
VR=28 V
VR=2 V, f=1 MHz
VR=25 V, f=1 MHz
VR=1 V, f=470 MHz
VR=2 to 25 V, f=1 MHz
Min. Typ. Max. Unit
10 nA
3.31 4.55 pF
0.61 0.70 0.77 pF
5.0 5.7
1.1 1.8 Ω
5.0 %
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1T365
Diode capacitance vs. Reverse voltage
10
1
0.1
C-Diode capacitance (pF)
VR-Reverse voltage (V)
Ta=25°C
f=1MHz
1 10 100
Reverse voltage vs. Operating ambient temperature
40
45
35
30
–20
VR-Reverse voltage (V)
Ta-Operating ambient temperature (°C)
IR=10µA
0 20 40 60 80 100
Reverse current vs. Operating ambient temperature
100
1.0
0.1
10
0.01
IR-Reverse current (pA)
Ta-Operating ambient temperature (°C)
VR=28V
–20 0 20 40 60 80
Reverse current vs. Reverse voltage
10
0.1
1.0
0.01
IR-Reverse current (pA)
VR-Reverse voltage (V)
Ta=60°C
Ta=25°C
1 10 100
Example of Representative Characteristics
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