SM 2N7002E Datasheet
2N7002E
S amHop Microelectronics C orp.
Augus t , 200 2
N-C hannel E nhanc ement Mode F ield E ffec t T rans is tor
PR ODUC T S UMMAR Y
VDS S
60V
ID
0. 25A
D
R DS (O N) (
3.0 @ V G S = 10V
4.0 @ V G S = 5V
S OT -23
S
G
W
) Max
F E ATUR E S
S uper high dense cell des ign for low R
R ugged and reliable.
S OT -23 package.
D
G
S
DS (O N
AB S OL UT E MAX IMUM R AT ING S (TA=25 C unles s otherwis e
P a rameter
Drain-S ource Voltage
G a te-S ource Voltage
S ymbol
V
DS
V
G S
Limit Unit
60
20
).
V
V
Drain C urrent-C ontinuous @ TJ=125 C
-P ulsed
Drain-S ource Diode F orward C urrent
Maximum P ower Diss ipation
a
b
a
a
Opera ting J unction and S torage
Temperature R ange
THE R MAL C HAR AC TE R IS T IC S
Thermal R esistance, J unction-to-Ambient
I
D
I
DM
I
S
P
D
TJ, T
S TG
a
R
thJA
1
250
1.0
250
200
-55 to 150
625
mA
A
mA
mW
C
C
/W
2N7002E
E LE C T R IC AL C H AR AC T E R IS T IC S (T A=25 C unles s otherwis e noted)
C
P arameter
OF F C HAR AC TE R IS TIC S
Drain-S ource B reakdown Voltage
S ymbol
B V
DS S
C ondition
V
G S
0V, ID 10uA
=
=
Min
60
Typ
Max
Unit
V
Zero G ate Voltage Drain C urrent
G ate-B ody Lea kage
ON C HAR AC TE R IS TIC S
b
G ate Thres hold Voltage
Drain-S ource On-S tate R esistance
On-S tate Drain C urrent
DYNAMIC C HAR AC T E R IS TIC S
c
Input C apacitance
Output C apacitance
R evers e Transfer C apacitance
S WIT C HING C HAR AC T E R IS TIC S
I
I
DS S
G S S
VDS 60V, V
= =
V
G S
20V, VDS 0V
=
G S
0V
=
1
100
uA
nA
7
V
G S (th)
R
DS (ON)
I
D(ON)
g
F S
C
IS S
C
OS S
C
R S S
c
V
DS VG S
=
=
V
G S
10V, I
V
G S
5V, I
== =
V
DS
= 7V, V
= =
V
DS
7V, I
V
DS
=25V, V
f =1.0MH
, ID = 250uA
D
250mA
D
50mA
G S
= 10V
D
200mA
G S
= 0V
Z
1 2.5
500
80
2.0
3.0
4.0
19
50
10 25
3 5
V
ohm
ohm
mA
mSF orward Transconductance
P
F
P
F
P
F
Turn-O n Delay T ime
R ise Time
Turn-O ff Delay Time
F all T ime
t
D(ON)
t
t
D(OFF )
t
7.5
6
3
20 ns
20
ns
ns
ns
VDD = 30V,
r
f
ID = 100mA,
V
G S
= 10V,
R
GE N
2
=10
ohm
7.5
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