SLS SL74HC166D, SL74HC166H Datasheet

SL74HC166
System Logic Semiconductor
SLS
High-Performance Silicon-Gate CMOS
The SL74HC166 is identical in pinout to the LS/ALS166. The device inputs are compatible with standard CMOS outputs; with pullup resistors, they are compatible with LS/ALSTTL outputs.
This device is a parallel-in or serial-in, serial-out shift register with gated clock inputs and an overriding clear input. The shift/load input establishes the parallel-in or serial-in mode. When high, this input enables the serial data input and couples the eight flip -flops for serial shifting with each clock pulse. Synchronous loading occurs on the next clock pulse when this is low and the parallel data inputs are enabled. Serial data flow is inhibited during parallel loading. Clocking is done on the low-to-high level edge of the clock pulse via a two input positive NOR gate, which permits one input to be used as a clock enable or clock inhibit function. Clocking is inhibited when either of the clock inputs are held high, holding either input low enables the other clock input. This will allow the system clock to be free running and the register stopped on command with the other clock input. A change from low-to-high on the clock inhibit input should only be done when the clock input is high. A buffered direct clear input overrides all other inputs, including the clock, andsets all flip -flop to zero.
Outputs Directly Interface to CMOS, NMOS, and TTL
Operating Voltage Range: 2.0 to 6.0 V
Low Input Current: 1.0 µA
High Noise Immunity Characteristic of CMOS Devices
ORDERING INFORMATION
SL74HC166N Plastic
SL74HC166D SOIC
TA = -55° to 125° C for all packages
PIN ASSIGNMENT
LOGIC DIAGRAM
PIN 16 =VCC
PIN 8 = GND
SL74HC166
System Logic Semiconductor
SLS
MAXIMUM RATINGS*
Symbol Parameter Value Unit
VCC DC Supply Voltage (Referenced to GND) -0.5 to +7.0 V VIN DC Input Voltage (Referenced to GND) -1.5 to VCC +1.5 V
V
OUT
DC Output Voltage (Referenced to GND) -0.5 to VCC +0.5 V
IIN DC Input Current, per Pin ±20 mA
I
OUT
DC Output Current, per Pin ±25 mA
ICC DC Supply Current, VCC and GND Pins ±50 mA PD Power Dissipation in Still Air, Plastic DIP+
SOIC Package+
750 500
mW
Tstg Storage Temperature -65 to +150 °C
TL Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP or SOIC Package)
260 °C
*
Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions. +Derating - Plastic DIP: - 10 mW/°C from 65° to 125°C
SOIC Package: : - 7 mW/°C from 65° to 125°C
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
VCC DC Supply Voltage (Referenced to GND) 2.0 6.0 V
VIN, V
OUT
DC Input Voltage, Output Voltage (Referenced to GND) 0 VCC V
TA Operating Temperature, All Package Types -55 +125 °C
tr, tf Input Rise and Fall Time (Figure 1) VCC =2.0 V
VCC =4.5 V V
CC
=6.0 V
0 0 0
1000
500 400
ns
This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high-impedance circuit. For proper operation, VIN and V
OUT
should be constrained to the range
GND(VIN or V
OUT
)VCC.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused outputs must be left open.
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