SIRENZA SPA-2318 User Manual
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Product Description
Stanford Microdevices’ SPA-2318 is a high efficiency GaAs
Heterojunction Bipolar Transistor (HBT) amplifier housed in
a low-cost surface-mountable plastic package. These HBT
amplifiers are fabricated using molecular beam epitaxial
growth technology which produces reliable and consistent
performance from wafer to wafer and lot to lot.
This product is specifically designed for use as a driver
amplifier for infrastructure equipment in the 2150 MHz PCS
band. Its high linearity makes it an ideal choice for multi-carrier
and digital applications.
SPA-2318
2150 MHz 1 Watt Power Amplifier
with Active Bias
Product Features
• High Linearity Performance:
+47 dBm Typ. OIP3 at 2140 MHz
+21.7 dBm W-CDMA Channel Power
at -45 dBc ACP
VC1
VBIAS
RFIN
Active
Bias
RFOUT/
VC2
• On-chip Active Bias Control
• High Gain: 23 dB Typ.
• Patented High Reliability GaAsHBT Technology
• Surface-Mountable Plastic Package
Preliminary
VPC2
Applications
• W-CDMA Systems
• Multi-Carrier Applications
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The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are
subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not
authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems.
Copyright 2001 Stanford Microdevices, Inc. All worldwide rights reserved.
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Phone: (800) SMI-MMIC http://www.stanfordmicro.com726 Palomar Ave., Sunnyvale, CA 94085
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EDS-101432 Rev B
SPA-2318 2150 MHz 1 Watt Power Amp
2140 MHz Application Circuit Data, Icc=400mA, T=+25C, Vcc=5V
Note: Tuned for Output IP3
Input/Output Return Loss,
Isolation vs Frequency
-4
S22
-10
-16
-22
dB
S11
-28
-34
-40
S12
2.11 2.12 2.13 2.14 2.15 2.16 2.17
30
27
24
dB
21
18
15
2.11 2.12 2.13 2.14 2.15 2.16 2.17
Gain vs. Frequency
GHz
Preliminary
Preliminary
25C
-40C
85C
P1dB vs Frequency
30
28
dBm
26
25C
85C
-40 C
24
2.11 2.12 2.13 2.14 2.15 2.16 2.17
GHz
GHz
Output Third Order Intercept vs. Tone Power
2.14GHz
52
50
48
46
dBm
44
42
40
25C
85C
-40C
38
10 12 14 16 18 20
P
per tone (dBm)
OUT
Output Third Order Intercept vs. Frequency
(P
per tone = 14dBm)
52
OUT
50
48
46
dBm
44
42
40
2.11 2.12 2.13 2.14 2.15 2.16 2.17
GHz
Device Current vs. Source Voltage
600
25C
500
-40 C
85C
400
300
200
Device Current (mA)
100
0
0123456
V
(V)
cc
25C
85C
-40 C
Phone: (800) SMI-MMIC http://www.stanfordmicro.com726 Palomar Ave., Sunnyvale, CA 94085
2
EDS-101432 Rev B
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