SIRENZA SPA-2318 DATA SHEET

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Product Description
Sirenza Microdevices’ SPA-2318 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot.
This product is specifically designed for use as a driver amplifier for infrastructure equipment in the 1960 and 2140 MHz bands. Its high linearity makes it an ideal choice for multi-carrier and digital applications.
The matte tin finish on Sirenza’s lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. This package is also manu­factured with green molding compounds that contain no antimony trioxide nor halogenated fire retardants.
VC1
VBIAS
RFIN
VPC2
Active
Bias
RFOUT/
VC2
SPA-2318
RoHS Compliant
Pb
Green
SPA-2318Z
1700-2200 MHz 1 Watt Power Amp with Active Bias
Product Features
• Now available in Lead Free, RoHS Compliant, & Green Packaging
• High Linearity Performance: +21 dBm IS-95 Channel Pwr at -55 dBc ACP +20.7 dBm W-CDMA Channel Pwr at -50dBc ACP
+47 dBm Typ. OIP3
• On-chip Active Bias Control
• High Gain: 24 dB T yp. at 1960 MHz
• Patented High Reliability GaAsHBT T echnology
• Surface-Mountable Plastic Package
Applications
• W-CDMA Systems
• PCS Systems
• Multi-Carrier Applications
& Packag
Preliminary
Symbol
ACP
VSWR Input VSWR
OIP
Para m e ters : Tes t Co n d itions :
= 50 Ohms Temp = 25ºC, Vcc = 5.0V
Z
0
f
Frequency of Operation MHz 1700 2200
0
P
Output Power at 1dB Compression
1dB
A d ja c e nt C hanne l Pow e r IS- 95 @ P W-CDMA @ P
S
S m all Sig nal G ai n
21
Outp ut Thi rd O rde r Interc ep t Poi nt
3
Power out per tone = +14dBm
NF Noise Fi g ure
Devic e Current
I
CC
Device Voltage
V
CC
R
Therma l Resistance (junction - lead), TL = 85ºC ºC/W 31
th j-l
= 21.0 dB m
OUT
OUT
[1,2]
[1,2]
[1,2]
[1,2]
[1]
= 20.7 dBm
[1,2]
[1]
[2]
f = 1960 MHz f = 2140 MHz
f = 1960 MHz f = 2140 MHz
f = 1960 MHz f = 2140 MHz
f = 1960 MHz f = 2140 MHz
f = 1960 MHz f = 2140 MHz
f = 1960 MHz f = 2140 MHz
Ib ia s = 10 mA
Ic1 = 70 mA
Ic2 = 320 mA
Units Min. Typ. Max.
dBm
dBc -55.0
dB
-
-
dBm
dB
mA 360 400 425
V
22.5
4.75 5.0 5.25
29.5
29.5
-50.0 -47.0
24.0
23.5 25.0
1.6:1
1.6:1
46.5
47.0
5.5
5.5
[1] Optimal ACP tune [2] Optimal IP3 tune
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2002 Sirenza Microdevices, Inc. All worldwide rights reserved.
1
EDS-101432 Rev H
SP A-2318 1700-2200 MHz 1 Watt Power Amp.
ACP Optimized 1960 MHz Application Circuit Dat a, Icc=400mA, Vcc=5V IS-95, 9 Channels Forward
1960 MHz Adjacent Channel Power
-40
-45
-50
-55
dBc
-60
-65
-70
-75 16 18 20 22 24
vs. Channel Output Power
dBm
25C
-40C 85C
IS-95 CDMA at 1960 MHz
24 dBm
21 dBm
17 dBm
13 dBm
T=25oC
23.75
Phone: (800) SMI-MMIC http://www.sirenza.com303 S. Technology Court, Broomfield, CO 80021
2
EDS-101432 Rev H
SP A-2318 1700-2200 MHz 1 W att Power Amp.
ACP Optimized 1960 MHz Application Circuit Dat a, Icc=400mA, Vcc=5V
31
30
29
28
dBm
27
26
25
1.93 1.94 1.95 1.96 1.97 1.98 1.99
GHz
Input/Output Return Loss,
P1dB vs Frequency
Isolation vs Frequency, T=25
0
-5
-10
-15
-20
dB
-25
-30
-35
-40
1.93 1.94 1.95 1.96 1.97 1.98 1.99
GHz
°°
°C
°°
25C 85C
-40C
S11 S12 S22
30
27
24
dB
21
18
15
1.93 1.94 1.95 1.96 1.97 1.98 1.99
GHz
Device Current vs. Source Voltage
Gain vs. Frequency
600
500
400
300
200
Device Current (mA)
100
0
0123456
25C
-40 C 85C
V
(V)
cc
25C 85C
-40C
3
EDS-101432 Rev H
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