现货库存、技术资料、百科信息、热点资讯,精彩尽在鼎好!
Product Description
Sirenza Microdevices’ SPA-2118 is a high efficiency GaAs
Heterojunction Bipolar Transistor (HBT) amplifier housed in
a low-cost surface-mountable plastic package. These HBT
amplifiers are fabricated using molecular beam epitaxial
growth technology which produces reliable and consistent
performance from wafer to wafer and lot to lot.
This product is specifically designed for use as a driver
amplifier for infrastructure equipment in the 850 MHz band.
Its high linearity makes it an ideal choice for multi-carrier and
digital applications.
SPA-2118
850 MHz 1 Watt Power Amplifier
with Active Bias
Product Features
High Linearity Performance:
•
+20.7 dBm IS-95 CDMA Channel Power
at -55 dBc ACP
VC1
VBIAS
RFIN
Active
Bias
RFOUT/
VC2
+47 dBm typ. OIP3
• On-chip Active Bias Control
• High Gain: 33 dB Typ.
• Patented High Reliability GaAsHBT Technology
• Surface-Mountable Plastic Package
VPC2
Applications
• IS-95 CDMA Systems
• Multi-Carrier Applications
• AMPS, ISM Applications
lobmyS
Z
0
f
0
P
Bd1
noitarepOfoycneuqerFzHM018009069
PCA
S
12
RWSVRWSVtupnI-1:5.1
PIO
3
FNerugiFesioNBd0.5
I
CC
V
CC
R
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions.
Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are
subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not
authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems.
Copyright 2002 Sirenza Microdevices, Inc. All worldwide rights reserved.
I
SAIB
l-jht
tnerruCeciveD
,Am01= I
1C
,Am07= I
egatloVeciveDV57.40.552.5
52=pmeTsmhO05= º V,C
:snoitidnoCtseT:sretemaraP
V0.5=
CC
stinU .niM .pyT .xaM
noisserpmoCBd1tarewoPtuptuOmBd0.92
rewoPlennahCtnecajdA
P,tesffozHK588±,zHM088@59-SI
TUO
mBd7.02=
cBd0.55-0.25-
zHM088,niaGlangiSllamSBd5.130.335.43
tnioPtpecretnIredrOdrihTtuptuO
mBd41+=enotreptuorewoP
Am023=
2C
T,)dael-noitcnuj(ecnatsiseRlamrehT
Cº58=W/Cº13
L
Phone: (800) SMI-MMIC http://www.sirenza.com522 Almanor Ave., Sunnyvale, CA 94085
1
mBd0.74
Am063004524
EDS-102012 Rev F
Preliminary
SPA-2118 850 MHz 1 Watt Power Amp.
850-950 MHz Application Circuit Data, Icc=400mA, Vcc=5V, IS-95, 9 Channels Forward
880 MHz Adjacent Channel Power vs. Channel Output Power
-40.0
-45.0
-50.0
-40C
25C
85C
-55.0
-60.0
dBc
-65.0
-70.0
-75.0
-80.0
-85.0
11 12 13 14 15 16 17 18 19 20 21 22 23 24 25
Channel Output Power (dBm)
dBm
IS-95 CDMA at 880 MHz
T=+25C
522 Almanor Ave., Sunnyvale, CA 94085
+24 dBm
+20 dBm
+10 dBm
+16 dBm
Phone: (800) SMI-MMIC http://www.sirenza.com
2
EDS-102012 Rev F