SIRENZA SPA-1218 User Manual

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Product Description

Sirenza Microdevices’ SPA-1218 is a high efficiency GaAs
Heterojunction Bipolar Transistor (HBT) amplifier housed in
a low-cost surface-mountable plastic package. These HBT
amplifiers are fabricated using molecular beam epitaxial
growth technology which produces reliable and consistent
performance from wafer to wafer and lot to lot.

This product is specifically designed for use as a driver
amplifier for infrastructure equipment in the 1960 MHz PCS
band. Its high linearity makes it an ideal choice for multi-carrier
and digital applications.

SPA-1218

1960 MHz 1 Watt Power Amplifier
with Active Bias

Product Features

• High Linearity Performance:

+21.3 dBm IS-95 Channel Power at -55 dBc ACP

VCC

VBIAS

RFIN

N/C

Active

Bias

RFOUT/

VCC

Input

Match

+48 dBm OIP3 Ty p.

• On-chip Active Bias Control

• Patented High Reliability GaAs HBT T echnology

• Surface-Mountable Plastic Package

Applications

• PCS Systems

• Multi-Carrier Applications

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The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions.
Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are
subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not
authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems.
Copyright 2002 Sirenza Microdevices, Inc. All worldwide rights reserved.

303 S. Technology Ct., Broomfield, CO 80021

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Phone: (800) SMI-MMIC http://www.sirenza.com

1

EDS-101428 Rev G

SP A-1218 1960 MHz 1 Watt Power Amp.

1960 MHz Application Circuit Data, ICC=320 mA, T=+25C, VCC=5V

Note: Tuned for ACP

Adj. Channel Pwr. vs. Channel Output Pwr.

IS-95 @ 1.96 GHz

-45

-50

-55

-60

dBc

-65

-70

-75
14 16 18 20 22 24

dBm

-40 C
85C
25C

14

13

12

11

dB

10

9

8

1.93 1.94 1.95 1.96 1.97 1.98 1.99

Gain vs. Frequency

Preliminary

25C
85C

-40 C

GHz

P1dB vs. Frequency

32

30

28

26

dBm

24

22

20

1.93 1.94 1.95 1.96 1.97 1.98 1.99

GHz

450
400
350
300
250
200
150

NOT RECOMMENDED FOR NEW DESIGNS

Device Current (mA)

100

50

0

Device Current vs. Source Voltage

25C

-40C
85C

012345

25C
85C

-40C

Input/Output Return Loss,

Isolation vs. Frequency, T=25

0

-5

-10

-15

-20

dB

-25

-30

-35

-40

1.93 1.94 1.95 1.96 1.97 1.98 1.99

GHz

V

(V)

cc

°°

°C

°°

S11
S12
S22

Phone: (800) SMI-MMIC http://www.sirenza.com303 S. Technology Ct., Broomfield, CO 80021

2

EDS-101428 Rev G