SimCom SIM8905A User Manual

SIM8905A_User Manual_
V1.00

Smart Machine Smart Decision

2

Compliance Information:

FCC Compliance Statement: This device complies with Part 15 of the FCC Rules . Operation is
subject to the following two conditions: 1. This device may not cause harmful interference, and 2.
This device must accept any interference received, including interference that may cause undesired
operation. This device must accept any interference received, including interference that may cause
undesired operation. Product that is a radio transmitter is labeled with FCC ID.

FCC Caution:

(1)Exposure to Radio Frequency Radiation. This equipment must be installed and operated in
accordance with provided instructions and the antenna(s) used for this transmitter must be installed
to provide a separation distance of at least 20 cm from all persons and must not be collocated or
operating in conjunction with any other antenna or transmitter. End-users and installers must be
provided with antenna installation instructions and transmitter operating conditions for satisfying RF
exposure compliance.
(2)Any changes or modifications not expressly approved by the grantee of this device could void the
user's authority to operate the equipment.
(3)This Transmitter must not be co-located or operating in conjunction with any other antenna or
transmitter.
(4)Changes or modifications to this unit not expressly approved by the party responsible for
compliance could void the user authority to operate the equipment.
(5) the modules FCC ID is not visible when installed in the host, if the host is marketed so that
end users do not have straight forward commonly used methods for access to remove the module so
that the FCC ID of the module is visible; then an additional permanent label referring to the enclosed
module: Contains Transmitter Module FCC ID: 2AJYU-8PSA301 or Contains FCC ID: 2AJYU-8PSA301.

The following statement must be included with all versions of this document supplied to an
OEM or integrator, but should not be distributed to the end user.
This device is intended for OEM integrators only.
Please See the full Grant of Equipment document for other restrictions.

Smart Machine Smart Decision

3

1. SIM8905A Description

1.1. Summarize

SIM8905A is a smart module, which is based on Qualcomm MSM8909 platform. It includes baseband, memory,
RF front end and required circuitry to support LTE-FDD.

1.2. Feature

Feature Implementation

Application Processor

Quad ARM Cortex-A7 cores up to 1.1 GHz

32 kB L1, 512 kB L2 cache
ARMv7 32-bit architecture

Memory

8Gb LPDDR3 up to 533Mhz; (SIM8905AH：16Gb LPDDR3 RAM)

8GB eMMC NAND flash

External memory via SD

SD3.0; Support SD flash devices up to 32GB

Operating System

Android OS 5.1/7.1/8

Power supply

3.4V ~4.4V

Charge management

Integrated 1.44 A linear charger for single-cell lithium-ion batteries

Display

4-lane MIPI_DSI, 1.5Gbps each

HD(720P), 60fps

Camera

Primary camera: 2-lane MIPI_CSI, 8MP

Secondary camera: 1-lane MIPI_CSI, 5MP

Video performance

Encode:

H.264 BP/MP –720p, 30fps
MPEG-4 SP / H.263 P0 –WVGA, 30fps
VP8 –WVGA, 30fps
Decode:

H.264 BP/MP/HP–1080p, 30 fps
MPEG-4 SP/ASP–1080p, 30 fps
DivX 4x/5x/6x–1080p, 30 fps
H.263 P0–WVGA, 30 fps
VP8 –1080p, 30 fps
(HEVC) H.265 MP 8 bit –1080p, 30 fps

Audio

Two inputs that support single-ended configurations

Three outputs: earpiece, stereo headphones, and mono class-D speaker driver

Smart Machine Smart Decision

4

Voice codec support:

G711; Raw PCM ; QC ELP; EVRC, -B, -WB; AMR-NB, -WB; GSM-EFR, -FR,

-HR;
Audio codec support:
MP3; AAC+, eAAC; AMR-NB, -WB, G.711, WMA 9/10 Pro

USIM card

Dual cards dual standby

Transmission rate

 LTE Category 4 - 150 Mbps (DL)

 LTE Category 4 - 50 Mbps (UL)

Temperature range

Operating temperature: -25℃ ~ +75℃

Storage temperature: -40℃ ~ +90℃

Physical dimension

Dimension: 40.5*40.5*2.8mm

Weight: 10.6g

Smart Machine Smart Decision

5

1.3. Pin

99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
83
82
81
80
79
78
77
76
75

110
109
108
107
106
105
104
103
102
101
100

111

38

39

40

41

42

43

44

45

46

47

48

49

50

51

52

53

54

55

56

57

58

59

60

61

62

63

64

65

66

67

68

69

70

71

72

73

74

1
2
3
4
5
6
7
8

9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37

115

114

113

112

130

129

128

127

126

125

124

123

122

121

120

119

118

117

116

146

145

144

143

142

141

140

139

138

137

136

135

134

133

132

131

VBAT

_BB

VBAT

_BB

GND

MIC

1P

GND

_

MIC

MIC2P

GND

EAR_

P

SPK_M

SPK_

P

USIM

1

_

RST

USIM1_

CLK

SD

_LDO12

GPIO_23

TP_

RST_N

USB_

DP

GND

USB

_

DM

GND

USIM

1_VDD

GND

USIM1_

DET

PWM

TP_

INT_N

USIM1

_DATA

USB_

ID

USIM

2

_DET

USIM

2

_

RST

USIM

2

_CLK

VIB

_

DRV

_

N

USIM2_DATA

USIM

2_

VDD

ALSP

_INT

_

N/

GPIO

_94

GPIO

_98
GPIO_0
GPIO_

110

GPIO

_

97
GPIO_68
GPIO

_69

GPIO_

89
GPIO

_

88
GPIO

_92

GPIO

_31

KEY

_VOL

_DOWN

_

N

CAM0_RST

_N

UART

2

_

TXD

SENSOR

_

I2

C_

SDA

SENSOR_I

2C

_

SCL

GND

ANT_

MAIN

GPIO

_32

UART2

_

RXD

KEY_

VOL

_UP

_N

CAM0_

PWDN

GND

GND

ANT-BT
GND
CAM

1_

MCLK

HPH_GND

HPH

_R

HS_DET

HPH_L

USB_VBUS

GND

GND

VBAT_

THERM

VBAT_

SNS

GND

ANT_

DRX

GND

LDO17_

2V85

ADC

CHARGE_SEL

VRTC

ANT_GNSS

GND

GPIO

_8

GND

LDO6_1

V8

GPIO_17

GPIO_16

GPIO_

95

SD

_DATA1

SD_

DATA2

SD_

DATA3

SD_CLK

SD_CMD

SD_DATA0

SD_DET

/GPIO_38

TP_

I2C_SCL

TP_I2

C_SDA

SD

_LDO11

LCD_

RST_N

LCD_TE

GND

MIPI_DSI

_CLK_

M

MIPI_DSI_

CLK_P

MIPI_DSI_

LANE0M

MIPI_DSI

_LANE0

P

GND

MIPI_CSI

0_CLK_M

USB

_BOOT

SIM8905

UART1

_CTS

UART

1_RTS

UART

1_

RXD

UART1

_

TXD

MIPI

_DSI_LANE3

P

MIPI_

DSI_LANE3M

MIPI_DSI_

LANE2P

MIPI

_DSI_LANE

2M

MIPI_

DSI_LANE

1P

MIPI

_DSI_

LANE1M

MIPI

_CSI0_

LN1_

P

MIPI_

CSI0_

LN1_

M

MIPI

_CSI0

_LN0_

P

MIPI_CSI

0_LN

0_M

MIPI_CSI

0_CLK

_P

MIPI

_CSI

1_CLK

_M

MIPI_CSI

1_CLK

_P

MIPI

_CSI1

_LN0

_M

MIPI_CSI1

_LN0

_P

GND

CAM0

_MCLK

GND
CAM_

I

2

C

_SDA

CAM

_I2

C_SCL

CAM

1

_

PWDN

CAM1_

RST_N

ACCL

_

INT2

_

N/

GPIO_

65

MAG

_INT

_

N/

GPIO_36

LDO

5

_1V8

ACCL

_

INT1

_

N/

GPIO_

96

PWRKEY

GPIO_

99

GPIO_58

GPIO_

9

GPIO_10

GPIO_

11

VBAT_RF

VBAT_RF

GND

GND

USB

_VBUS

147

EAR_

M

GND

148

149

150

151

152

153

154

179

180

181

182

195

196

197

198

163

164

165

166

167

168

169

170

187

188

189

190

203

204

205

206

171

172

173

174

175

176

177

178

191

192

193

194

207

208

209

210

155

156

157

158

159

160

161

162

183

184

185

186

199

200

201

202

RESERVED

POWER

SDC2

USB

Others

UART

USIM

AUDIO

GND

GPIO

Antenna

TP

LCM

Camera

RESET

MIC

_

BIAS

1

MIC_BIAS2

Smart Machine Smart Decision

6

1.4. Picture

Figure 1: T op and Bottom view of SIM8905A

Smart Machine Smart Decision

7

1.5. Dimension

Figure 2: Dimention

Smart Machine Smart Decision

8

2. Detail Block Diagram

MSM8909

eMMC flash +

LPDDR3

EBI1

SDC1

GPIO

Keypad Buttons

I2C

SPI

UART * 2

4 Lanes DSI

2 Lanes CSI

1 Lanes CSI

USB

UIM1

UIM2

SDC2

Earpiece

Microphone

Headset

TP/Sensor/Cam/others

Vibrator

Keypad Buttons

CODEC

Linear

Charger

Output Power

Management

PM8909

19.2M XO

PDM BUS

Primary Camera (8MP)

720P LCD

Secondary Camera (5MP)

USB HS (Support OTG)

UIM Card2

SD Card

UIM Card1

VBUS_5V

VBAT

ADC

Speaker

4G/3G/2G MODEM

Core

MODEM/Voice

Processor

GNSS

Baseband

Modem
Jolokia

WWAN RX I/Q

GSM Phase

WWAN TX I/Q

RFFE

GNSS I/Q

WTR4905

Front End

MMMB

Power

Amplifier

Modele

RFFE

RFFE

3rd party
PA+SW

DIVERSITY

SWITCH

MODULE

MAIN

DRX

BT/WIFI

Baseband

Codec Digital

AP

Quad A7 w/ 512K L2

Camera ISP/VFE/Jpeg HW

Display Processor

Video

Graphics

Peripherals

SPMI BUS

Memory Support

Note2

Figure 3: Block diagram of SIM8905A

3. Interface Application

Power Supply

The power supply pins of SIM8905A include VBAT_RF and VBAT_BB. VBAT_RF directly supplies the power
t o R F PA ; VBAT_BB supplies the power to the baseband system. The power supply of SIM8905A ranges from

3.4V to 4.4V, and 3.9V is recommended. It must be able to provide sufficient current up to 3A for the high-power
transmitting.

If the DC input voltage is +5V and customers do not care about the power efficiency, a high-current low-dropout
regulator is recommended. Figure 4 is the reference design.

Vin

Vout

GND

FB

3

+

PWR_CTRL

R102

R101

VBAT

100K

47K

+

C103

330uF

C104

100nF

U101

MIC29302

5

4

1

2

C101 C102

100uF

1uF

DC INPUT

R103
470R

On/Off

Figure 4: LDO power supply reference circuit

Note: To ensure a proper behavior of the regulator under light load, an extra minimum load (R103 in Figure 4)
is required, because the current SIM8905A consumed is very small in sleep mode and power off mode. For
more details about minimum load, please refer to specification of MIC29302.

Smart Machine Smart Decision

9

To increase power efficiency, the switching mode DC-DC converter is preferable, especially when DC input
voltage is quite high. The following figure is the reference design, and it is recommended to reserve a proper
ferrite bead (FB101 in Figure 5) in series for EMI suppression.

Vin

Vout

FB

U101

1

2

3

4

5

LM2596-ADJ

+

100uH

MBR360

L101

C101

+

C102

D102 C103

R102

R101

FB101

330uF

VBAT

2.2K

1K

100uF

1uF

C104

100nF

270R@100MHz

DC INPUT

PWR_CTRL

GND

On/Off

Figure 5: DC-DC power supply reference circuit

For battery-powered application, the 3.7V lithium battery can be connected to SIM8905A VBAT pins directly, but
other types of battery must be used carefully, since their maximum voltage may rise over the absolute maximu m
voltage of the module. When battery is used, the total impedance between battery and VBAT pins should be less
than 150mΩ.

In any case mentioned above, at the VBAT input pins side, please take Figure 6 as a reference:

5.1V

500mW

33pF

VBAT

VBAT_BB

GND

C101

C103

100uF

Module

D101

C105

220uF

VBAT_RF

Figure 6: VBAT input reference circuit

Where C101 is a 100uF tantalum capacito r with low ESR; C105 is a 220uF tantalum capacitor with lo w ESR;
33pF and 10pF capacitors are used for eliminating the high frequency interference; 5.1V/500mW zener diode can
protect the module against voltage surge.

All of these components should be placed as close to VBAT pins as possible.

Table 1: Recommended zener diode

Vendor

Part number

Power(watts)

Packages

1

On semi

MMSZ5231BT1G

500mW

SOD123

2

Prisemi

PZ3D4V2H

500mW

SOD323

3

Vishay

MMSZ4689-V

500mW

SOD123

Smart Machine Smart Decision

10

4

Crownpo

CDZ55C5V1SM

500mW

0805

Power on/off

Power on

Users can power on SIM8905A by pulling down the PWRKEY pin for more than 2 second then release. This pin
is already pulled up to 1.8V internally, so external pull up is not necessary. Reference circuits are shown as below:

4.7K

47K

PWRKEY

R

1.8V

1K

PMU

Module

Figure 7: Powered on/down module using transistor

PWRKEY

1

K

Module

R

1.8V

PMU

Figure 8: Powered on/down module using button

The power on sequence is illustrated in Figure9

Software Controlled

VBAT

PWRKEY

Others

t>2s

LDO5_1V8

LDO6_1V8

250us

175ms

Smart Machine Smart Decision

11

Figure9: Timing of power on module

Power off

Users can power off SIM8905A by pulling down the PWRKEY pin for more than 8 seconds.

VRTC

VRTC is the power supply for RTC circuit and charger output for coin cell or backup battery. If RTC support is
needed when the battery is removed, a qualified coin cell or keep-alive capacitor is required on the VRTC pin.
When VBAT is present and valid, coin cell charging is enabled through software control and powered from VBAT.

Reference circuits are shown as below:

Keep-alive capacitor:

RTC

Module

VRTC

Capacitor

Figure 10: Keep-alive capacitor

Non-rechargeable battery:

RTC

Module

VRTC

Non-rechargeable

battery

Figure 11: Non-rechargeable battery

Rechargeable battery:

RTC

Module

VRTC

Rechargeable

battery

Figure 12: Rechargeable battery

VRTC typical voltage is 3.0V, and the current consumption is about 5uA when VBAT is absence. For electrical
characteristics, please refer to Table 23: VRTC characteristic.

Smart Machine Smart Decision

12

Output Power Management

Table 2: Output power management summary

Pin Name Pin# Specified range (V) Rated current (mA) Expected use

LDO5_1V8

111

1.8 50 Force USB boot

LDO6_1V8

125

1.8

200

Display, camera, sensors

SD_LDO11

38

2.95

600

SD/MMC card

SD_LDO12

32

1.8/2.95

50

For SD signals pull-up

USIM1_VDD

26

1.8/2.95

50

USIM 1

USIM2_VDD

21

1.8/2.95

50

USIM 2

LDO17_2V85

129

2.85

420

Display, camera, sensors

USB Interface

SIM8905A provides one High-speed USB 2.0 interface, used for software upgrading, debugging, charging, etc.

Module

Connector

USB_DM

GND

GND

USB_VBUS

VBUS

1uF

<1pF

USB_DP

USB_DM

USB_DP

USB_ID

Figure 13: USB reference circuit

In addition, SIM8905A supports OTG function, but external 5V power supply is required.

Smart Machine Smart Decision

13

Module

Connector

USB

_

DM

GND

GND

USB

_

VBUS

VBUS

<1pF

USB_DP

USB_

DM

USB

_ID

USB

_

ID

USB

_

DP

External 5

V

Figure14: USB_OTG reference circuit

Linear Battery Charger

SIM8905A module integrates a 1.44A linear battery charger for single-cell lithium-ion batteries.

Charging Control

Battery charging is controlled by a PMIC state-machine. The first step in the automated charging process
determines if trickle charging is needed. Charging of a severely depleted battery must begin with trickle charging
to limit the current, avoid pulling VDD down, and protect the battery from more charging current than it can
handle. Once a minimum battery voltage is established using trickle charging, constant-current charging is enabled
to charge the battery quickly – this mode is sometimes called fast charging. Once the battery approaches its target
voltage, the charge is completed using constant-voltage charging.

V

WEAK

V

TRKL

3

.2V

2.8V

V

BAT

V

BAT-MAX

4.2V

450mA

/1440mA

I

BAT

I

BAT-MAX

Time

TRKL-A T

RKL-B CC CV

I

TRKL-A

90mA

I

TRKL-B

450

mA

Figure15: Charging control diagram

Table 3: Linear battery charger performance specifications

Parameter

Comments

Min

Typ

Max

Units

Smart Machine Smart Decision

14

I

TRKL-A

Trickle-A Charging current

81

90

99

mA

I

TRKL-B

Trickle-B Charging current

405

450

495

mA

V

TRKL

Trickle-B threshold voltage range
Programmable, 15.62 mV steps

2.5 2.796 2.984 V

V

WEAK

Weak battery threshold range
Programmable, 18.75 mV steps

3.0 3.206 3.581 V

V

BAT_M A X

Maximum battery voltage
Programmable, 25 mV steps

4 4.2 4.775 V

I

BAT_M AX

Fast charging current range
Programmable, 90mA steps

90 1440 mA

VBAT_SNS

VBAT_SNS is used for battery voltage sensing, the typical input range is 2.5V~4.5V.

UART/SPI/I2C

SIM8905A provides several sets of GPIOs which are available as BLSP (BAM-enabled low-speed peripheral)
interfaces that can be configured to support various interface combinations, as shown in the following table. T he
operation voltage is 1.8V

Table 4: UART/SPI/I2C functional assignments

Pin Name Pin#

Expected or Default

Function

Alternative

Function 1

Alternative

Function 2

UART2_TXD

94

BLSP1_UART_TX

BLSP1_SPI_MOSI

UART2_RXD

93

BLSP1_UART_RX

BLSP1_SPI_MISO

SENSOR_I2C_SDA

92

BLSP1_I2C_SDA

BLSP1_SPI_CS_N

BLSP1_UART_CTS

SENSOR_I2C_SCL

91

BLSP1_I2C_SCL

BLSP1_SPI_CLK

BLSP1_UART_RTS

GPIO_8

119

GPIO

BLSP6_SPI_MOSI

GPIO_9

118

GPIO

BLSP6_SPI_MISO

GPIO_10

117

GPIO

BLSP6_SPI_CS_N

BLSP6_I2C_SDA

GPIO_11

116

GPIO

BLSP6_SPI_CLK

BLSP6_I2C_SCL

GPIO_16

123

GPIO

BLSP5_SPI_MOSI

GPIO_17

124

GPIO

BLSP5_SPI_MISO

TP_I2C_SDA

48

BLSP5_I2C_SDA

BLSP5_SPI_CS_N

TP_I2C_SCL

47

BLSP5_I2C_SCL

BLSP5_SPI_CLK

UART1_TXD

34

BLSP2_UART_TX

BLSP2_SPI_MOSI

UART1_RXD

35

BLSP2_UART_RX

BLSP2_SPI_MISO

UART1_CTS

36

BLSP2_UART_CTS

BLSP2_SPI_CS_N

BLSP2_I2C_SDA

UART1_RTS

37

BLSP2_UART_RTS

BLSP2_SPI_CLK

BLSP2_I2C_SCL

CAM_I2C_SDA

84

BLSP3_I2C_SDA

CAM_I2C_SCL

83

BLSP3_I2C_SCL

Note:

1. UART: can be used as a diagnostic port, up to 4 Mbps;

2. I2C: supports master-only mode; up to 3.4 MHz, 2.2Kohm pull -up resistors are needed externally;

Smart Machine Smart Decision

15

3. SPI: supports master-only mode; up to 52 MHz.

Secure Digital Interface

SIM8905A provides one 4-bit secure digital interface, which supports the following standards:

 SD Specifications Part 1 Physical Layer Specification Version 3.00
 Part A2 SD Host Controller Standard Specification Version 3.00
 Part E1 SDIO Specification Version 3.00

1 DAT2
2 DAT3
3 CMD
4 VDD
5 CLK
6 VSS
7 DAT0
8 DAT1

11 GND
12 GND
13 GND
14 GND

9 DET_SW
10 COMMON

SD Card

SD_DATA2
SD_DATA3

SD_CMD

SD_LDO11

SD_CLK

SD_DATA0
SD_DATA1

1M

SD_DET

LDO5_1V8

Module

1uF

33pF

TVS

C<15pF

Placed close to SD card

33R

33R is required for high-speed operation;
placed close to the module

NMNMNMNMNM

1uF

SD_LDO12

NM：Not Mounting

Reserved

Figure17: SD card reference circuit

Display Interface

SIM8905A provides a 4-lane MIPI_DS I, with 1.5 G bps per lane high-speed mode bandwidth, to support 720p HD
display.
PWM is used as PWM control for external WLED driver.

Table 5: Display interface pin definitions

Pin Name

Pin#

Type

Description

PWM

29

O

PWM control for external WLED driver

LCD_RST_N

49

O

LCD reset

LCD_TE

50

I

LCD tear effect

MIPI_DSI_CLK_M

52

O

MIPI display serial interface

MIPI_DSI_CLK_P

53

O

MIPI_DSI_LANE0M

54

O

MIPI_DSI_LANE0P

55

O

MIPI_DSI_LANE1M

56

O

MIPI_DSI_LANE1P

57

O

Smart Machine Smart Decision

16

If only 2-lane MIPI_DSI is needed, just leave LANE2 and LANE3 floating.

1

GND

2 LED

+
3 LED+
4 LED­5 LED­6 LCD_ID
7

VCC(2.8V)
8 GND
9 GND
10 VCC_IO
11 RESET
12 TE
13 NC
14 NC
15 GND
16 DSI_D1­17 DSI_D1+
18 GND
19 DSI_CLK­20 DSI_CLK+
21 GND
22 DSI

_D0

­23 DSI_D0+
24 GND
25 GND

LCM

LED+

LED-

LCD_RST_N

LCD_TE

MIPI_DSI_LANE1_M

MIPI_DSI_LANE1_P

MIPI_

DSI_CLK_M

MIPI_DSI_CLK_P

MIPI_DSI_

LANE0_M

MIPI_DSI_LANE0_P

LDO17_2V85

1uF

1uF

LDO6_1V8

PWM

WLED

driver

VBAT

Module

1

M

Figure 18: Display reference circuit

Touch Screen Interface

Table 6: Touch screen interface pin definitions

Note:

1. TP_I2C: supports master-only mode; 2.2Kohm pull-up resistors are needed externally;

MIPI_DSI_LANE2M

58

O

MIPI_DSI_LANE2P

59

O

MIPI_DSI_LANE3M

60

O

MIPI_DSI_LANE3P

61

O

Pin Name

Pin#

Type

Description

TP_I2C_SDA

48

I/O

Touch screen I2C data

TP_I2C_SCL

47

O

Touch screen I2C clock

TP_INT_N

30

I

Touch screen interrupt

TP_RST_N

31

O

Touch screen reset

Smart Machine Smart Decision

17

Camera Interface

SIM8905A supports two cameras: 2-lane MIPI_ CSI primary camera up to 8MP resolution and 1-lane MIPI_C SI
secondary camera up to 5MP resolution.

Table 7: Camera interface pin definitions

Pin Name Pin# Type Description

MIPI_CSI0_CLK_M

63

I

Primary camera serial interface

MIPI_CSI0_CLK_P

64

I

MIPI_CSI0_LN0_M

65

I

MIPI_CSI0_LN0_P

66

I

MIPI_CSI0_LN1_M

67

I

MIPI_CSI0_LN1_P

68

I

MIPI_CSI1_CLK_M

70

I

Secondary camera serial interface

MIPI_CSI1_CLK_P

71

I

MIPI_CSI1_LN0_M

72

I

MIPI_CSI1_LN0_P

73

I

CAM0_MCLK

74

O

Primary Camera master clock

CAM1_MCLK

75

O

Secondary Camera master clock

CAM0_RST_N

79

O

Primary Camera reset

CAM0_PWDN

80

O

Primary Camera power down

CAM1_RST_N

81

O

Secondary Camera reset

CAM1_PWDN

82

O

Secondary Camera power down

CAM_I2C_SCL

83

O

Camera I2C clock

CAM_I2C_SDA

84

I/O

Camera I2C data

Smart Machine Smart Decision

18

LDO17_2V85

LDO6_1V8

AGND
VCM
AVDD
DVDD
VDD_IO
GND
MCP
MCN
GND
MDP0
MDN0
GND
MDP1
MDN1
GND
MCLK
RESET
PWDN

MIPI_CSI

0_CLK_P

MIPI_CSI0_CLK_M

MIPI_CSI0_LN0_P

MIPI_CSI0_LN0_M

MIPI_CSI0_LN1_P

MIPI_CSI0_LN1_M

CAM0_MCLK

CAM0_RST_N

CAM0_PWDN

100nF 100nF2.2uF

Primary

Camera

Module

2.2uF

2.2K

2.2K

CAM_I2C_SCL

CAM_I2C_SDA

SCL
SDA

Figure 19: Primary camera reference circuit

Audio

SIM8905A provides two microphone inputs and three outputs including earpiece, stereo headphones, and mono
class-D speaker driver.

Table 8: Audio interface pin definitions

Pin Name Pin# Type Description

EAR_P 8 O

Earpiece output, positive

EAR_M 9 O

Earpiece output, negative

HPH_R

136

O

Headphone output, right channel

HPH_GND

137

I

Headphone ground reference

HPH_L

138

O

Headphone output, left channel

HS_DET

139

I

Headset detection

GND_MIC

5

P

Microphone input 2 ground reference

MIC2P 6 I

Microphone input 2, positive

MIC1P 4 I

Microphone input 1, positive

SPK_M

11

O

Speaker driver output, negative

SPK_P

10

O

Speaker driver output, positive

MIC_BIAS1

194

O

Microphone bias 1

MIC_BIAS2

210

O

Microphone bias 2

Smart Machine Smart Decision

19

Microphone

Electret

Microphone

route as differential pair

& shielded by GND

Close to microphone

MIC1P

Module

GND_MIC

ESD

ESD

10pF

33pF

33pF

33pF

10pF

10pF

Figure 20: Microphone reference circuit

Note:

1. Internal MIC_BIAS pull-up is used to reduce BOM cost and PCB routing.

2. Single-ended capless input is the only supported configuration, but differential routing is recommended.

Table 9: Analog microphone input performance

Parameter

Test conditions

Min

Typ

Max

Units

Microphone amplifier gain = 0 dB (minimum gain)

Input referred noise

Single-ended, A-weighted, capless

-

19.3

25.1

µVrms

Signal-to-noise ratio

Single-ended, A-weighted, capless

92.0

94.0 - dB

THD+N ratio

Analog input = -1 dBV

f = 1.02 kHz; single-ended input; 200 Hz to
20 kHz bandwidth; capless

-

-86.0

-70.0

dB

Microphone amplifier gain = 6 dB

Input referred noise

Single-ended, A-weighted, capless

-

5.9

7.1

µVrms

Signal-to-noise ratio

Single-ended, A-weighted, capless

91.0

92.5 - dB

THD+N ratio

Analog input = -1 dBV

f = 1.02 kHz; single-ended input;

200 Hz to 20 kHz bandwidth; capless

-

-85.0

-70

dB

Microphone amplifier gain = 24 dB (maximum gain)

Input referred noise

Single-ended, A-weighted, capless

-

3.4

4.2

µVrms

Signal-to-noise ratio

Single-ended, A-weighted, capless

84.2

85.4 - dB

THD+N ratio

Analog input = -1 dBV

f = 1.02 kHz; single-ended input;

200 Hz to 20 kHz bandwidth; capless

-

-82.4

-76.0

dB

General requirements

Smart Machine Smart Decision

20

Full-scale input voltage

Single-ended 1 kHz input. Input signal

level required to get 0 dBFS digital output

-0.5

0

0.5

dBV

Input impedance

Capless input
Input disabled

1.0

3.0

-

-

-

-

MΩ
MΩ

Input capacitance

Capless input

- - 15

pF

Headset

Stereo class-AB headphone supports 16 Ω, 32 Ω, and up to 50 KΩ loads. Its typical output power at 1.02 KHz and
THD + N ≤ 1% is:

21.5 mW with 16 Ω loads, 0 dBFS and -4.5 dB gain
30.8 mW with 32 Ω loads, 0 dBFS and 0 dB gain

A 100KΩ pull-down resistor is integrated at HPH_L pin, which could be used for mechanical insertion or removal
detection through HS_DET pin. Figure 22 shows the reference circuit for normally-closed (NC) type headset jack.

HPH_R

Module

HPH_L

0R

0R

HS_DET

MIC2P

GND_MIC

HPH_GND

100K

33pF 33pF

33pF

Headset Jack

TVS

Close to headset jack

1000 OHM@100MHZ

1000 OHM@100MHZ

1000 OHM@100MHZ

1000 OHM@100MHZ

1000 OHM@100MHZ

1000 OHM@100MHZ

Figure 21:

Headset reference circuit

Note:

1. SIM8905A also supports NO/NC type headset jack with detect pin on HPH_L or GND.

2. HPH has a negative swing and requires a bi-dir ectional TVS diode.

Table 10: Headphone output performance specifications

Parameter

Test conditions

Min

Typ

Max

Units

Output power

16 Ω load f = 1.02 kHz, 0 dB FS; VDD_CP* = 1.95 V

15.6

21.5

25.5

mW

32 Ω load f = 1.02 kHz, 0 dB FS; VDD_CP* = 1.95 V

27.0

30.8

32.0

mW

Full-scale

output Voltage

16 Ω load f = 1.02 kHz, 0 dB FS; VDD_CP* = 1.95 V

0.50

0.59

0.64

Vrms

32 Ω load f = 1.02 kHz, 0 dB FS; VDD_CP* = 1.95 V

0.96

0.99

1.00

Vrms

Output load

13.0

16/32 - Ω

Smart Machine Smart Decision

21

Disabled output

impedance

Measured externally, with amplifier disabled

1.0 - -

MΩ

Note: The VDD_CP is internal Voltage of module.

Earpiece

Class AB earpiece driver supports 10.67 Ω, 16 Ω, 32 Ω, and up to 50 KΩ loads. It s typical output power at 1.02
KHz, 6 dB gain, and THD + N ≤ 1% is:

119 mW with 32 Ω loads
243 mW with 16 Ω loads
320 mW with 10.67 Ω loads

EAR_P

Close to earpiece

ESD

ESD

10pF

33pF

33pF

33pF

Module

EAR_M

10pF

10pF

10pF

33pF

33pF

33pF

10pF

10pF

Route as differential pair

& shielded by GND

Figure 22: Earpiece reference circuit

Table 11: Earpiece output performance specifications

Parameter

Test conditions

Min

Typ

Max

Units

Output power

32 Ω load f = 1.02 kHz, 6 dB gain THD+N < 1%

120.0

124.5

-

mW

16 Ω load f = 1.02 kHz, 6 dB gain THD+N < 1%

235.0

243.0

-

mW

Full-scale

output Voltage

6 dB gain mode f = 1.02 kHz

1.8

2.0

2.1

Vrms

1.5 dB gain mode f = 1.02 kHz

1.0

1.2

1.3

Vrms

Output load

10.7

32 - Ω

Disabled output

impedance

Measured externally, amplifier disabled

1.0 - -

MΩ

Speaker

Class-D mono differential loud speaker driver supports 4 Ω and 8 Ω loads. The driver is powered from VBAT, and
does not support external 5 V Boost Option. Its typical output power at 1.02 KHz, 12 dB gain, and THD + N ≤
1% is:

950 mW with 8 Ω loads, VDD_SPKR=VBAT= 4.2 V
692 mW with 8 Ω loads, VDD_SPKR= VBAT= 3.6 V
1063 mW with 4 Ω loads, VDD_SPKR=VBAT= 3.6 V

Smart Machine Smart Decision

22

SPK1P

Close to speaker

ESD

ESD

10pF

33pF

33pF

33pF

Module

SPK1N

10pF

10pF

10pF

33pF

33pF

33pF

10pF

10pF

Route as differential pair

& shielded by GND

Figure 23: Speaker reference circuit

Table 12: speaker driver output performance specifications

Parameter

Test conditions

Min

Typ

Max

Units

Output power (Pout)

(f = 1 kHz, gain = 12 dB,

THD+N ≤ 1%)

15 μH + 8 Ω + 15 μH, Vdd = 3.6 V

584

631 - mW

15 μH + 4 Ω + 15 μH, Vdd = 3.6 V

862

953 - mW

15 μH + 8 Ω + 15 μH, Vdd = 3.8 V

662

710 - mW

15 μH + 8 Ω + 15 μH, Vdd = 4.2 V

819

879 - mW

THD+N

(1 kHz)

1 W Pout, VDD_SPKR = 4.2 V

-

-85.0

-75.0

dB

800 mW Pout, VDD_SPKR = 4.2 V

-

-75.0

-45.0

dB

600 mW Pout, VDD_SPKR = 3.8 V

-

-75.0

-70.0

dB

500 mW Pout, VDD_SPKR = 3.6 V

-

-76.0

-71.0

dB

Efficiency

（Vdd = 3.7 V）

500 mW Pout, 15 μH + 8 Ω + 15 μH

82.0

84.0 - %

1 W Pout, 15 μH + 4 Ω + 15 μH

73.0

78.0 - %

output impedance

Disabled

25 - -

kΩ

Shutdown

current

-

0.1

1.0

µA

Turn on time

- 0.2

10.0

ms

Microphone bias

SIM8905A provides two microphone bias outputs: MIC_BIAS1and MIC_BIAS2.
The microphone bias cannot be used for ECM-type microphone. MIC_BIAS1and MIC_BIAS2 could be used

for External MEMS microphone as power supply.

The microphone bias output performance specific ati ons are shown in the following table:

Table 13: Microphone bias output performance specifications

Parameter

Test conditions

Min

Typ

Max

Units

Smart Machine Smart Decision

23

Output voltage

No load

1.60 - 2.85

V

Output voltage error

No load

-3.00

0.00

3.00

%

Output current

2 microphone loads of 1.0 to 1.5 mA each

2.0

3.0 - mA

Output switch to ground

On resistance

- - 20

Ω

Sink current

2.0 - -

mA

Output noise

0.1 µF bypass

0.0

2.0

4.0

µVrms

PSRR- Power supply

rejection ratio

at 20 Hz

80 - -

dB

at 200 Hz to 1 kHz

80 - -

dB

at 5 kHz

80 - -

dB

at 10 kHz

80 - -

dB

at 20 kHz

75 - -

dB

Output capacitor value

［2］

External bypass mode［1］

0.1

0.1

0.5

µF

USIM Interface

SIM8905A supports dual cards dual standby, and card presence detection.

Note: The standard software provided by SIMCom only supports single USIM1 card configuration.

Table 14: USIM interface pin definitions

Pin Name

Pin#

Type

Description

USIM2_DET

17

I

USIM2 presence detection

USIM2_RST

18

O

USIM2 reset

USIM2_CLK

19

O

USIM2 clock

USIM2_DAT

20

I/O

USIM2 data

USIM2_VDD

21

P

LDO 15 output for USIM2, 1.8V/2.95V

USIM1_DET

22

I

USIM1 presence detection

USIM1_RST

23

O

USIM1 reset

USIM1_CLK

24

O

USIM1 clock

USIM1_DAT

25

I/O

USIM1 data

USIM1_VDD

26

P

LDO 14 output for USIM1, 1.8V/2.95V

Smart Machine Smart Decision

24

Module

DET

22R

220nF

USIM Card

22pF

VCC

GND

RST

VPP

CLK I/O

COM

LDO5_1V8

USIM_VDD

USIM_RST
SUIM_CLK

USIM_DAT

100K

22R

22R

USIM_DET

TVS

C<30pF

Figure 1: USIM card reference circuit

Note:

USIM_DAT has been pulled up with a 10kohm resistor to USIM_VDD in module.
A 220nF shut capacitor on USIM_VDD is used to reduce interference.

ADC

SIM8905A provides one 16bits ADC. Its performance parameters are shown as the following table.

Table 15: ADC performance parameters

Parameter

Comments

Min

Typ

Max

Unit

Input voltage range

Programmable

0.1

0.3

- - 1.7

4.5

V

Resolution

- 16

-

bits

Analog input bandwidth

- 100

-

kHz

Sample rate

XO/8 - 2.4

-

MHz

INL

15-bit output

- - ±8

LSB

DNL

15-bit output

- - ±4

LSB

Offset error

Relative to full-scale

- - ±1

%

Gain error

Relative to full-scale

- - ±1

%

Vibrator

SIM8905A supports silent incoming-call alarms with its vibration motor driver. The vibration driver is a
programmable voltage output that is referenced to VBAT; when off, its output voltage is VBAT. The motor is
connected between VBAT and the VIB_DRV_N pin. The programmable motor voltage ranges from 1.2 to 3.1 V in
100 mV steps.

Smart Machine Smart Decision

25

1uF

VBAT

VIB_DRV

Module

Vibrator

0R

Figure 25: Vibrator reference circuit

Antenna Interface

SIM8905A provides two antenna interfaces including MAIN antenna and DRX antenna. To ensure good RF
performance, users should meet the following requirements:

● Keep the RF traces at 50Ω.

● Maintain a complete and continuous reference ground plane from antenna pin to the RF connector.

● The RF traces should be away from any other noisy traces.

● Keep the RF traces as short as possible.

MAIN Antenna reference circuit

The recommended circuit is shown as below:

RF connector

(optional)

C1

Module

87

ANT_MAIN

GND

C2

88

R1

Matching circuit

MAIN ANT

86

GND

Figure 26: MAIN antenna recommended circuit

R1, C1 and C2 are antenna matching components in Figure 27, the value of these components are determined
according to the antenna tuning results. By default, R1 is 0Ω, C1 and C2 are reserved. The RF connector in Figure

27 is used to ensure the accuracy and convenience of the conduction testing, so SIMCOM suggest keeping it. If
considering Low-Cost BOM, user can cancel the connector.

Smart Machine Smart Decision

26

DRX Antenna reference circuit

The recommended circuit is shown as below:

RF connector

(optional)

C1

Module

131

ANT_DRX

GND

C2

132

R1

Matching circuit

Diversity ANT

130

GND

Figure 27: DRX antenna recommended circuit

R1, C1 and C2 are antenna matching components in Figure 28, the value of these components are determined
according to the antenna tuning results. By default, R1 is 0Ω, C1 and C2 are reserved. The RF connector in Figure
28 is used to ensure the accuracy and convenience of the conduction testing, so SIMCOM suggest keeping it. If
considering Low-Cost BOM, user can cancel the connector.

Smart Machine Smart Decision

27

PCB Layout

This section provides PCB layout guidelines for SIM8905A users to ensure their production against lots of issues,
and achieve the optimum performance.

Stack-up Options

At least, 4-layer through-hole PCB should be chosen for good impedance control and signal shielding.

General Placement Guidelines

 Locate SIM8905A module in the center of PCB, rather than in the corner.
 Digital devices and traces should not be placed near sensitive signals like RF and clock.
 Keep SPKR and MIC away from sensitive RF lines.

PCB Layout Guideline Details

RF Trace

 RF connector should be placed close to the module’s antenna pin.
 Antenna matching circuit should be placed close to the antenna.

 Keep the RF traces at 50Ω.
 Maintain a complete and continuous reference ground plane from antenna pin to the RF connector.

 The RF traces should be far away from any other noisy traces.
 Keep the RF traces as short as possible.
 If using a coaxial RF cable to connect the antenna, please avoid spanning on USIM cards, power circuits and

high-speed digital circuits to minimize the impact of each other.

Power/GND

 Both VBAT and return path should be as short and wide as possible to minimize the IR drop
 The VBAT current should go through Zener diode, capacitors, then VBAT pins
 Must have a solid ground plane throughout the board as the primary reference plane for most signals

USIM Card

 Ensure USIM card holder is far way from antenna or RF signal

Smart Machine Smart Decision

28

 ESD component and bypass c aps should be placed closed to USIM Card
 USIM card signals should be far away from other high-speed signal

MIPI_DSI/CSI

 Protect MIPI_DSI/CSI signals from noisy signals (clocks, SMPS, etc.)
 Differential pairs, 100 Ω nominal, ±10%
 Total routing length < 305 mm
 Intra-pair length matching < 5 ps (0.67 mm)
 Inter-pair length matching < 10 ps (1.3 mm)
 Lane-to-lane trace spacing = 3x line width
 Spacing to all other signals = 4x line width
 Maintain a solid ground reference for clocks to provide a low-impedance path for return currents
 Each trace needs to be next to a ground plane
 Minimize the number of via on the trace

Refer to the following table for the length of MIPI traces inside the module.

Table 16: Length of MIPI traces inside the module

Pin#

Net Name

Length(mm)

52

MIPI_DSI_CLK_M

8.08

53

MIPI_DSI_CLK_P

9.03

54

MIPI_DSI_LANE0M

9.04

55

MIPI_DSI_LANE0P

8.73

56

MIPI_DSI_LANE1M

9.29

57

MIPI_DSI_LANE1P

9.10

58

MIPI_DSI_LANE2M

8.69

59

MIPI_DSI_LANE2P

8.95

60

MIPI_DSI_LANE3M

9.10

61

MIPI_DSI_LANE3P

9.85

63

MIPI_CSI0_CLK_M

14.04

64

MIPI_CSI0_CLK_P

13.79

65

MIPI_CSI0_LN0_M

13.27

66

MIPI_CSI0_LN0_P

13.23

67

MIPI_CSI0_LN1_M

13.96

68

MIPI_CSI0_LN1_P

14.49

70

MIPI_CSI1_CLK_M

17.21

71

MIPI_CSI1_CLK_P

17.69

72

MIPI_CSI1_LN0_M

16.34

73

MIPI_CSI1_LN0_P

17.25

USB

 90 Ω differential, ± 10% trace impedance
 Differential data pair matching < 6.6 mm (50 ps)

Smart Machine Smart Decision

29

 External components should be located near the USB connector.
 Should be routed away from sensitive circuits and signals.
 If there are test points, place them on the trace to keep branches as short as possible
 If USB connector is used as the charger input, USB_VBUS node must be routed to the module using

extremely wide traces or sub planes.

Refer to the following table for the length of USB traces inside the module.

Table 17: Length of USB traces inside the module

Pin#

Net Name

Length(mm)

13

USB_DM

30.58

14

USB_DP

30.22

SDC Signal

 Protect other sensitive signals/circuits from SDC corruption.
 Protect SDC signals from noisy signals (clocks, SMPS, etc.).
 Up to 200 MHz clock rate
 50 Ω nominal, ±10% trace impedance
 CLK to DATA/CMD length matching < 1 mm
 30–35 Ω termination resistor on clock lines near the module
 Total routing length < 50 mm recommended
 Spacing to all other signals = 2x line width
 Bus capacitance < 15 pF

Refer to the following table for the length of SD traces inside the module.

Table 18: Length of SD traces inside the module

Pin#

Net Name

Length(mm)

39

SD_CLK

14.24

40

SD_CMD

15.19

41

SD_DATA0

14.87

42

SD_DATA1

13.63

43

SD_DATA2

12.90

44

SD_DATA3

13.05

Audio

Analog input

 4 to 5 mil trace widths; 4 to 5 mil spacing between traces
 Differential route for MIC1P with GND_MIC and MIC2P with GND_MIC;
 Isolate from noise sources, such as antenna, RF signals, SMPS, clocks, and other digital signals with fast

Smart Machine Smart Decision

30

transients

Analog output
 Coplanar ground fill on both sides (of traces or pair as appropriate); in between ground planes – grounds

above and below

 Isolate from noise sources such as antenna, RF signals, SMPS, clocks, and other digital signals with fast

transients.

 EAR output signal – route as differential pair with 10 mil trace widths.
 SPK output signals – route as differential pair with 20 mil trace widths with 8 Ω load and 25 mil trace widths

with 4 Ω load

 HPH output signals – not a differential pair; 10 mil trace widths for HPH_L and HPH_R; 15 mil trace widths

for HPH_GND

 Connect HPH_GND to the ground pin of the jack connector and route HPH_GND in between HPH_L and

HPH_R for best crosstalk minimization

SIM8905E Document

- 31 -

Electrical and Reliability

Absolute Maximum Ratings

Absolute maximum ratings reflect the stress levels that, if exceeded, may cause permanent damage to the device.
Functionality and reliability are only guaranteed within the operating conditions.

Table 19: Absolute maximum ratings

Parameter Min Max Unit

VBAT -0.3 5 V
VBUS -0.3 7 V
VRTC - 3.5 V

Temperature Range

Table 20: Temperature range

Parameter Min Typ Max Unit

Operating temperature -25 +75

℃

Storage temperature -40 +90

℃

Operating Voltage

Table 21: Operating voltage

Parameter Min Typ Max Unit

VBAT 3.4

3.9

4.4 V

VBUS 4.35

5

5.5 V

VRTC

2.0

3.0

3.25

V

Smart Machine Smart D ecision

- 32 -

Digital-logic Characteristics

Table 22: 1.8 V digital I/O characteristics

Parameter Description Min Typ Max Unit

VIH

High-level input voltage 1.17 - - V

VIL

Low-level input voltage - - 0.63 V

VOH

High-level output voltage 1.35 - - V

VOL

Low-level output voltage - - 0.45 V

Table 23: USIM interface characteristics (USIM_VDD=1.8V/2.95V)

Parameter Description Min Typ Max Unit

VIH

High-level input voltage 0.7* USIM_VDD

-

USIM_VDD+0.3 V

VIL

Low-level input voltage

-0.3

-

0.2* USIM_VDD V

VOH

High-level output voltage 0.8*USIM_VDD

-

USIM_VDD V

VOL

Low-level output voltage 0

-

0.4 V

Table 24: SD interface characteristics (SD_LDO11 =1.8V)

Parameter Description Min Typ Max Unit

VIH

High-level input voltage 1.27

-

2 V

VIL

Low-level input voltage -0.3

-

0.58 V

VOH

High-level output voltage 1.4

-

- V

VOL

Low-level output voltage

0

-

0.45 V

Table 25: SD interface characteristics (SD_LDO11 =2.95V)

Parameter Description Min Typ Max Unit

VIH

High-level input voltage 0.625* SD_LDO11

-

SD_LDO11+0.3 V

VIL

Low-level input voltage

-0.3

-

0.25* SD_LDO11 V

VOH

High-level output voltage 0.75* SD_LDO11

-

SD_LDO11 V

VOL

Low-level output voltage 0

-

0.125* SD_LDO11 V

Smart Machine Smart D ecision

- 33 -

PWRKEY Characteristics

Table 26: PWRKEY characteristics

Parameters Description Min Typ Max Unit

VIH

High-level input voltage 1.4 - - V

VIL

Low-level input voltage - - 0.6 V

VRTC Characteristics

Table 27: VRTC characteristic

Parameter Description Min Typ Max Unit

VRTC

-IN

VRTC input voltage 2.0

3.0

3.25 V

I

RTC-IN

VRTC current consumption -

5

10 uA

VRTC

-OUT

VRTC output voltage

2.5

3.1

3.2

V

I

RTC-OUT

VRTC output current -

2 mA

Current Consumption (VBAT=3.9V)

Table 28: Current consumption

Parameter Conditions Min Typ Max Unit

Leakage current Off mode 20 uA

Standby current

Flight mode 1.22 mA
GSM:

BS-PA-MFRMS=9
BS-PA-MFRMS=5
BS-PA-MFRMS=2

1.65

1.85

3.00

mA
mA

mA
WCDMA, DRX=8 2.48 mA
LTE-FDD, standby 1.28s 2.11 mA
LTE-TDD, standby 1.28s 2.56 mA

Peak current 3.0 A

Electro-Static Discharge

Electrostatic discharge (ESD) occurs naturally in laboratory and factory environments. An established

Smart Machine Smart D ecision

- 34 -

high-voltage potential is always at risk of disc harging to a lower potential. If this dis charge path is through a
semiconductor device, it may result in destructive damage.

SIM8905A must be handled according to the ESD Association standard: ANSI/ESD S20.20-1999, Protection of
Electrical and Electronic Parts, Assemblies, and Equipment.

Table 29: ESD performance parameters（Temperature: 25℃, Humidity: 45%）

Pin

Contact discharge

Air discharge

VBAT

±5KV ±10 KV

GND

±5KV ±12KV

Antenna

±5KV ±10KV

PWRKEY

±4KV ±6KV

Module Operating Frequencies

Table 30: Module operating frequencies

Frequency Receive Transmit Physical channel

LTE B2 1930-1990 MHz 1850-1910 MHz

TX: 18600-19199
RX: 600-1199

LTE B4 2110-2155 MHz 1710-1755 MHz

TX: 19950-20399
RX: 1950-2399

LTE B5 869-894 MHz 824-849MHz

TX: 20400-20649
RX: 2400-2649

LTE B12 729-746MHz 699-716MHz

TX: 23010-23179
RX: 5010-5179

Module Output power

Table 31: Conducted transmission power

Frequency Power Min.

LTE-FDD B2 23dBm +/-2.7dB <-40dBm
LTE-FDD B4 23dBm +/-2.7dB <-40dBm
LTE-FDD B5 23dBm +/-2.7dB <-40dBm
LTE-FDD B12 23dBm +/-2.7dB <-40dBm

Smart Machine Smart D ecision

- 35 -

Module Receiving Sensitivity

Table 32: Reference sensitivity QPSk P

REFSENS

(LTE)

E-UTRA

Band number

1.4 MHz 3 MHz 5 MHz 10 MHz 15 MHz 20 MHz

Duplex

mode

2 -102.7 -99.7 -98 -95 -93.2 -92 FDD
4 -104.7 -101.7 -100 -97 -95.2 -94 FDD
5 -103.2 -100.2 -98 -95 FDD

12 -101.7 -98.7 -97 -94 FDD

Smart Machine Smart D ecision

- 36 -

Contact us:
Shanghai SIMCom Wireless Solutions Co.,Ltd.

Address: Building B, SIM Technology Building, No. 633, Jinzhong Road, Shanghai, P. R. China
200335
Tel: + 86 21 3157 5100
Fax: [phone]
URL: http://simcomm2m.com/