Silicon Storage Technology Inc SST49LF040-33-4C-WH Datasheet

FEATURES:
4 Mbit LPC Flash
SST49LF040
SST49LF0404 Mb LPC Flash
Advance Information
– SST49LF040: 512K x8 (4 Mbit)
• Conforms to Intel LPC Interface Specification 1.0
• Flexible Erase Capability
– Uniform 4 KByte sectors – Uniform 64 KByte overlay blocks – 64 KByte Top boot block protection – Chip-Erase for PP Mode Only
• Single 3.0-3.6V Read and Write Operations
• Superior Reliability
– Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention
• Low Power Consumption
– Active Read Current: 6 mA (typical) – Standby Current: 10 µA (typical)
• Fast Sector-Erase/Byte-Program Operation
– Sector-Erase Time: 18 ms (typical) – Block-Erase Time: 18 ms (typical) – Chip-Erase Time: 70 ms (typical) – Byte-Program Time: 14 µs (typical) – Chip Rewrite Time: 8 seconds (typical) – Single-pulse Program or Erase – Internal timing generation
• Two Operational Modes
– Low Pin Count (LPC) Interface mode for
in-system operation
– Parallel Programming (PP) mode for fast production
programming
• LPC Interface Mode
– 5-signal communication interface supporting
byte Read and Write – 33 MHz clock frequency operation – WP# and TBL# pins provide hardware write protect
for entire chip and/or top boot block – Standard SDP Command Set – Data# Polling and Toggle Bit for End-of-Write
detection – 5 GPI pins for system design flexibility – ID pins for multi-chip selection – Decode both top and bottom regions of the
system memory map
• Parallel Programming (PP) Mode
– 11-pin multiplexed address and 8-pin data
I/O interface – Supports fast programming In-System on pro-
grammer equipment
• CMOS and PCI I/O Compatibility
• Packages Available
– 32-lead PLCC – 32-lead TSOP (8mm x 14mm)
PRODUCT DESCRIPTION
The SST49LF040 flash memory devices are designed to interface with the LPC bus for PC and Internet Appliance application in compliance with Intel Low Pin Count (LPC) Interface Specification 1.0. Two interface modes are sup­ported by the SST49LF040: LPC mode for In-System operation and Parallel Programming (PP) mode to interface with programmer equipment.
The SST49LF040 flash memory devices are manufactured with SST’s proprietary, high performance SuperFlash Tech­nology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability com­pared with alternate approaches. The SST49LF040 device significantly improves performance and reliability, while low­ering power consumption. The SST49LF040 device writes (Program or Erase) with a single 3.0-3.6V power supply. It uses less energy during Erase and Program than alterna­tive flash memory technologies. The total energy con­sumed is a function of the applied voltage, current and time of application. Since for any give voltage range, the Super­Flash technology uses less current to program and has a
©2001 Silicon Stor age Technology, Inc. S71213-00-000 11/01 562
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shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash memory technologies. The SST49LF040 product provides a maximum Byte-Program time of 20 µsec. The entire memory can be erased and programmed byte-by-byte typ­ically in 8 seconds when using status detection features such as Toggle Bit or Data# Polling to indicate the comple­tion of Program operation. The SuperFlash technology pro­vides fixed Erase and Program time, independent of the number of Erase/Program cycles that have performed. Therefore the system software or hardware does not have to be calibrated or correlated to the cumulative number of erase cycles as is necessary with alternative flash memory technologies, whose Erase and Program time increase with accumulated Erase/Program cycles.
To meet high density, surface mount requirements, the SST49LF040 device is offered in 32-lead TSOP and 32­lead PLCC packages. See Figures 2 and 3 for pin assign­ments and Table 1 for pin descriptions.
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
Intel is a registered trademark of Intel Corporation.
These specifications are subject to change without notice.
4 Mbit LPC Flash
SST49LF040
Advance Information
TABLE OF CONTENTS
PRODUCT DESCRIPTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
LIST OF FIGURES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
LIST OF TABLES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
FUNCTIONAL BLOCKS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Functional Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
PIN DESCRIPTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
MODE SELECTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
LPC MODE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
CE# . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
LFRAME# . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Device Memory Hardware Write Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Reset. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Device Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Abort Mechanism . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Write Operation Status Detection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Data# Polling. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Toggle Bit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
System Memory Mapping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Multiple Device Selection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Registers. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
General Purpose Inputs Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
JEDEC ID Registers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
PARALLEL PROGRAMMING MODE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Reset. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Device Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Read. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Byte-Program Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Sector-Erase Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Block-Erase Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Chip-Erase Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Write Operation Status Detection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Data# Polling (DQ Toggle Bit (DQ
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
7
). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
6
Data Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Hardware Data Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Software Data Protection (SDP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
©2001 Silicon Storage Technology, Inc. S71213-00-000 11/01 562
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4 Mbit LPC Flash SST49LF040
Advance Information
Electrical Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Product Identification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Design Considerations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Absolute Maximum Stress Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
AC CHARACTERISTICS (LPC MODE) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
AC CHARACTERISTICS (PP MODE) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
PRODUCT ORDERING INFORMATION. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
Valid combinations for SST49LF040 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
PACKAGING DIAGRAMS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
©2001 Silicon Storage Technology, Inc. S71213-00-000 11/01 562
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4 Mbit LPC Flash
SST49LF040
Advance Information
LIST OF FIGURES
FIGURE 1: Device Memory Map for SST49LF040. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
FIGURE 2: Pin Assignments for 32-lead TSOP (8mm x 14mm) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
FIGURE 3: Pin Assignments for 32-lead PLCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
FIGURE 4: Boot Configuration from the Top of the 4 GByte System Memory Map . . . . . . . . . . . . . . . . . . . 11
FIGURE 5: Boot Configuration from the Bottom of the 4 GByte System Memory Map . . . . . . . . . . . . . . . . 12
FIGURE 6: LCLK Waveform. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
FIGURE 7: Reset Timing Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
FIGURE 8: Output Timing Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
FIGURE 9: Input Timing Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
FIGURE 10: Read Cycle Timing Diagram (LPC Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
FIGURE 11: Write Cycle Timing Diagram (LPC Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
FIGURE 12: Program Cycle Timing Diagram (LPC Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
FIGURE 13: Data# Polling Timing Diagram (LPC Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
FIGURE 14: Toggle Bit Timing Diagram (LPC Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
FIGURE 15: Sector-Erase Timing Diagram (LPC Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
FIGURE 16: Block-Erase Timing Diagram (LPC Mode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
FIGURE 17: GPI Register Readout Timing Diagram (LPC Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
FIGURE 18: Reset Timing Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
FIGURE 19: Read Cycle Timing Diagram (PP Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
FIGURE 20: Write Cycle Timing Diagram (PP Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
FIGURE 21: Data# Polling Timing Diagram (PP Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
FIGURE 22: Toggle Bit Timing Diagram (PP Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
FIGURE 23: Byte-Program Timing Diagram (PP Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
FIGURE 24: Sector-Erase Timing Diagram (PP Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
FIGURE 25: Block-Erase Timing Diagram (PP Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
FIGURE 26: Chip-Erase Timing Diagram (PP Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
FIGURE 27: Software ID Entry and Read (PP Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
FIGURE 28: Software ID Exit and Reset (PP Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
FIGURE 29: AC Input/Output Reference Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
FIGURE 30: A Test Load Example. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
FIGURE 31: Read Command Sequence (LPC Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
FIGURE 32: Byte-Program Algorithm (LPC Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
FIGURE 33: Erase Command Sequences (LPC Mode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
FIGURE 34: Software Product Command Flowcharts (LPC Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
FIGURE 35: Byte-Program Algorithm (PP Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
FIGURE 36: Wait Options (PP Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
FIGURE 37: Software Product Command Flowcharts (PP Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
FIGURE 38: Erase Command Sequence (PP Mode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
©2001 Silicon Storage Technology, Inc. S71213-00-000 11/01 562
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4 Mbit LPC Flash SST49LF040
Advance Information
LIST OF TABLES
TABLE 1: Pin Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
TABLE 2: ID Strapping Values for SST49LF040 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
TABLE 3: General Purpose Inputs Register. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
TABLE 4: Memory Map Register Addresses (Top of the 4GB System Memory) . . . . . . . . . . . . . . . . . . . . 13
TABLE 5: Memory Map Register Addresses (Bottom of the 4GB System Memory) . . . . . . . . . . . . . . . . . 13
TABLE 6: Product Identification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
TABLE 7: Operation Modes Selection (PP Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
TABLE 8: Software Command Sequence (All Interfaces) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
TABLE 9: DC Operating Characteristics (All Interface) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
TABLE 10: Recommended System Power-up Timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
TABLE 11: Pin Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
TABLE 12: Reliability Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
TABLE 13: Clock Timing Parameters (LPC Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
TABLE 14: Reset Timing Parameters (LPC Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
TABLE 15: Read/Write Cycle Timing Parameters (LPC Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
TABLE 16: AC Input/Output Specifications (LPC Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
TABLE 17: Interface Measurement Condition Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
TABLE 18: Standard LPC Memory Cycle Definition (LPC Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
TABLE 19: Read Cycle Timing Parameters (PP Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
TABLE 20: Program/Erase Cycle Timing Parameters (PP Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
TABLE 21: Reset Timing Parameters (PP Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
©2001 Silicon Storage Technology, Inc. S71213-00-000 11/01 562
5
FUNCTIONAL BLOCKS
FUNCTIONAL BLOCK DIAGRAM
TBL#
WP#
LAD[3:0]
LCLK
LFRAME#
ID[3:0]
GPI[4:0]
R/C#
A[10:0]
DQ[7:0]
OE#
WE#
LPC
Interface
Programmer
Interface
INIT#
X-Decoder
Address Buffers & Latches
Control Logic
RST#
4 Mbit LPC Flash
SST49LF040
Advance Information
SuperFlash
Memory
Y-Decoder
I/O Buffers and Data Latches
CE#MODE
562 ILL B1.0
TBL#
Block 7
7FFFFH
70000H
6FFFFH
Block 6
60000H
5FFFFH
Block 5
50000H
4FFFFH
Block 4
40000H
3FFFFH
Block 3
WP#
30000H
2FFFFH
Block 2
20000H
1FFFFH
Block 1
10000H 0F000H
0EFFFH
Block 0
(64 KByte)
03000H 02000H 01000H 00000H
FIGURE 1: DEVICE MEMORY MAP FOR SST49LF040
Boot Block
4 KByte Sector 15
4 KByte Sector 2 4 KByte Sector 1 4 KByte Sector 0
562 ILL F03.0
©2001 Silicon Storage Technology, Inc. S71213-00-000 11/01 562
6
4 Mbit LPC Flash SST49LF040
Advance Information
PIN DESCRIPTION
NC NC NC
NC (CE#)
MODE (MODE)
A10 (GPI4)
R/C# (LCLK)
V
DD (VDD
NC
RST# (RST#)
A9 (GPI3) A8 (GPI2) A7 (GPI1) A6 (GPI0)
A5 (WP#)
A4 (TBL#)
1 2 3 4 5 6 7
)
8 9 10 11 12 13 14 15 16
Standard Pinout
Top View
Die Up
( ) Designates LPC Mode
FIGURE 2: PIN ASSIGNMENTS FOR 32-LEAD TSOP (8MM X 14MM)
)
DD
(V
DD
R/C# (LCLK)
A10 (GPI4)
29
28
27
26
25
24
23
22
21
A7(GPI1)
A6 (GPI0)
A5 (WP#)
A4 (TBL#)
A3 (ID3)
A2 (ID2)
A1 (ID1)
A0 (ID0)
DQ0 (LAD0)
A8 (GPI2)
A9 (GPI3)
RST# (RST#)NCV
4 3 2 1 32 31 30
5
6
7
8
32-lead PLCC
9
10
Top View
11
12
13
14 15 16 17 18 19 20
32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17
562 ILL F03a.0
MODE (MODE)
NC (CE#)
NC
NC
VDD (VDD)
OE# (INIT#)
WE# (LFRAME#)
NC
DQ7 (RES)
OE# (INIT#) WE# (LFRAME#) V
)
DD (VDD
DQ7 (RES) DQ6 (RES) DQ5 (RES) DQ4 (RES) DQ3 (LAD3) V
)
SS (VSS
DQ2 (LAD2) DQ1 (LAD1) DQ0 (LAD0) A0 (ID0) A1 (ID1) A2 (ID2) A3 (ID3)
)
SS
(V
SS
V
DQ4 (RES)
DQ5 (RES)
DQ1 (LAD1)
DQ3 (LAD3)
DQ2 (LAD2)
( ) Designates LPC Mode
FIGURE 3: P
©2001 Silicon Storage Technology, Inc. S71213-00-000 11/01 562
IN ASSIGNMENTS FOR 32-LEAD PLCC
DQ6 (RES)
562 ILL F03b.0
7
4 Mbit LPC Flash
SST49LF040
Advance Information
TABLE 1: PIN DESCRIPTION
Interface
Symbol Pin Name Type
A10-A
Address I X Inputs for low-order addresses during Read and Write operations. Addresses are
0
DQ7-DQ0Data I/O X To output data during Read cycles and receive input data during Write cycles.
OE# Output Enable I X To gate the data output buffers. WE# Write Enable I X To control the Write operations. MODE Interface
Mode Select
INIT# Initialize I X This is the second reset pin for in-system use. This pin is internally combined
ID[3:0] or
Identification Inputs
ID[3:1] GPI[4:0] General
Purpose Inputs
TBL# Top Block Lock I X When low, prevents programming to the boot block sectors at top of memory.
LAD[3:0] Address and
Data LCLK Clock I X To provide a clock input to the control unit LFRAME# Frame I X To indicate start of a data transfer operation; also used to abort an LPC cycle
RST# Reset I X X To reset the operation of the device WP# Write Protect I X When low, prevents programming to all but the highest addressable blocks.
R/C# Row/Column
Select RES Reserved X These pins must be left unconnected. V
DD
V
SS
Power Supply PWR X X To provide power supply (3.0-3.6V)
Ground PWR X X Circuit ground (0V reference) CE# Chip Enable I X This signal must be asserted to select the device. When CE# is low, the device
NC No Connection I X X Unconnected pins.
1. I=Input, O=Output
1
FunctionsPP LPC
internally latched during a Write cycle. For the programming interface, these addresses are latched by R/C# and share the same pins as the high-order address inputs.
Data is internally latched during a Write cycle. The outputs are in tri-state when OE# is high.
I X X This pin determines which interface is operational. When held high, programmer
mode is enabled and when held low, LPC mode is enabled. This pin must be setup at power-up or before return from reset and not change during device oper­ation. This pin must be held high (V
) for PP mode and low (VIL) for LPC mode.
IH
with the RST# pin; If this pin or RST# pin is driven low, identical operation is exhibited.
I X These four pins are part of the mechanism that allows multiple parts to be attached
to the same bus. These pins are internally pulled-down with a resistor between 20­100 K
I X These individual inputs can be used for additional board flexibility. The state of
these pins can be read through LPC registers. These inputs should be at their desired state before the start of the PCI clock cycle during which the read is attempted, and should remain in place until the end of the Read cycle. Unused GPI pins must not be floated.
When TBL# is high it disables hardware write protection for the top block sectors. This pin cannot be left unconnected.
I/O X To provide LPC control signals, as well as addresses and Command
Inputs/Outputs data.
in progress.
When WP# is high it disables hardware write protection for these blocks. This pin cannot be left unconnected.
I X Select for the Programming interface, this pin determines whether the address
pins are pointing to the row addresses, or to the column addresses.
is enabled. CE# must remain low during internal Write (Program or Erase) operations. When CE# is high, the device is placed in low power Standby mode.
T1.4 562
©2001 Silicon Storage Technology, Inc. S71213-00-000 11/01 562
8
4 Mbit LPC Flash SST49LF040
Advance Information
MODE SELECTION
The SST49LF040 flash memory devices can operate in two distinct interface modes: the LPC mode and the Paral­lel Programming (PP) mode. The mode pin is used to set the interface mode selection. If the mode pin is set to logic High, the device is in PP mode; while if the mode pin is set Low, the device is in the LPC mode. The mode selection pin must be configured prior to device operation. The mode pin is internally pulled down if the pin is left unconnected. In LPC mode, the device is configured to its host using stan­dard LPC interface protocol. Communication between Host and the SST49LF040 occurs via the 4-bit I/O communica­tion signals, LAD [3:0] and LFRAME#. In PP mode, the device is programmed via an 11-bit address and an 8-bit data I/O parallel signals. The address inputs are multi­plexed in row and column selected by control signal R/C# pin. The row addresses are mapped to the higher internal addresses, and the column addresses are mapped to the lower internal addresses. See Figure 1, the Device Mem­ory Map, for address assignments.
LPC MODE
CE#
The CE# pin, enables and disables the SST49LF040, con­trolling Read and Write access of the device. To enable the SST49LF040, the CE# pin must be driven low one clock cycle prior to LFRAME# being driven low. CE# must remain active low during internal Write (Erase or Program) operations. The device will enter the Standby mode when internal Write operations are completed and CE# is high.
LFRAME#
The LFRAME# signifies the start of a frame or the termina­tion of a broken frame. Asserting LFRAME# for one or more clock cycle and driving a valid START value on LAD[3:0] will initiate device operation. The device will enter the Standby mode when internal operations are completed and LFRAME# is high.
Device Memory Hardware Write Protection
The Top Boot Lock (TBL#) and Write Protect (WP#) pins are provided for hardware write protection of device mem­ory in the SST49LF040. The TBL# pin is used to write pro­tect 16 boot sectors (64 KByte) at the highest memory address range for the SST49LF040. WP# pin write pro­tects the remaining sectors in the flash memory.
An active low signal at the TBL# pin prevents Program and Erase operations of the top boot sectors. When TBL# pin is held high, the write protection of the top boot sectors is dis­abled. The WP# pin serves the same function for the remaining sectors of the device memory. The TBL# and WP# pins write protection functions operate independently of one another.
Both TBL# and WP# pins must be set to their required pro­tection states prior to starting a Program or Erase opera­tion. A logic level change occurring at the TBL# or WP# pin during a Program or Erase operation could cause unpre­dictable results.
Reset
A VIL on INIT# or RST# pin initiates a device reset. INIT# and RST# pins have the same function internally. It is required to drive INIT# or RST# pins low during a system reset to ensure proper CPU initialization. During a Read operation, driving INIT# or RST# pins low deselects the device and places the output drivers, LAD[3:0], in a high­impedance state. The reset signal must be held low for a minimal duration of time T a reset procedure is performed during a Program or Erase operation. See Table 14, Reset Timing Parameters, for more information. A device reset during an active Program or Erase will abort the operation and memory contents may become invalid due to data being altered or corrupted from an incomplete Erase or Program operation.
. A reset latency will occur if
RSTP
Device Operation
The LPC mode uses a 5-signal communication interface, a 4-bit address/data bus, LAD[3:0], and a control line, LFRAME#, to control operations of the SST49LF040. Cycle type operations such as Memory Read and Memory Write are defined in Intel Low Pin Count Interface Specifi­cation, Revision 1.0. JEDEC Standard SDP (Software Data Protection) Program and Erase commands sequences are incorporated into the standard LPC mem­ory cycles. See Figure 12 through Figure 17 timing dia­grams for command sequences.
LPC signals are transmitted via the 4-bit Address/Data bus (LAD[3:0]), and follow a particular sequence, depending on whether they are Read or Write operations. The standard LPC memory cycle is defined in Table 18.
Both LPC Read and Write operations start in a similar way as shown in Figures 10 and 11 timing diagrams. The host (which is the term used here to describe the device driving
©2001 Silicon Storage Technology, Inc. S71213-00-000 11/01 562
9
4 Mbit LPC Flash
SST49LF040
Advance Information
the memory) asserts LFRAME# for one or more clocks and drives a start value on the LAD[3:0] bus.
At the beginning of an operation, the host may hold the LFRAME# active for several clock cycles, and even change the Start value. The LAD[3:0] bus is latched every rising edge of the clock. On the cycle in which LFRAME# goes inactive, the last latched value is taken as the Start value. CE# must be asserted one cycle before the start cycle to select the SST49LF040 for Read and Write operations.
Once the SST49LF040 identifies the operation as valid (a start value of all zeros), it next expects a nibble that indi­cates whether this is a memory Read or Write cycle. Once this is received, the device is now ready for the Address and Data cycles. For Write operation the Data cycle will fol­low the Address cycle, and for Read operation TAR and SYNC cycles occur between the Address and Data cycles. At the end of every operation, the control of the bus must be returned to the host by a 2-clock TAR cycle.
Abort Mechanism
If LFRAME# is driven low for one or more clock cycles dur­ing a LPC cycle, the cycle will be terminated and the device will wait for the ABORT command. The host must drive the LAD[3:0] with ‘1111b’ (ABORT command) to return the device to the ready mode. If abort occurs during the inter­nal write cycle, the data may be incorrectly programmed or erased. It is required to wait for the Write operation to com­plete prior to initiation of the abort command. It is recom­mended to check the write status with Data# Polling D[7] or Toggle Bit D[6]. One other option is to wait for the fixed write time to expire.
Write Operation Status Detection
The SST49LF040 device provides two software means to detect the completion of a Write (Program or Erase) cycle, in order to optimize the system write cycle time. The soft­ware detection includes two status bits: Data# Polling D[7] and Toggle Bit D[6]. The End-of-Write detection mode is incorporated into the LPC Read Cycle. The actual comple­tion of the nonvolatile write is asynchronous with the sys­tem; therefore, either a Data# Polling or Toggle Bit read may be simultaneous with the completion of the Write cycle. If this occurs, the system may possibly get an errone­ous result, i.e., valid data may appear to conflict with either D[7] or D[6]. In order to prevent spurious rejection, if an erroneous result occurs, the software routine should include a loop to read the accessed location an additional two (2) times. If both Reads are valid, then the device has completed the Write cycle, otherwise the rejection is valid.
Data# Polling
When the SST49LF040 device is in the internal Program operation, any attempt to read D[7] will produce the com­plement of the true data. Once the Program operation is completed, D[7] will produce true data. Note that even though D[7] may have valid data immediately following the completion of an internal Write operation, the remaining data outputs may still be invalid: valid data on the entire data bus will appear in subsequent successive Read cycles. During internal Erase operation, any attempt to read D[7] will produce a ‘0’. Once the internal Erase opera­tion is completed, D[7] will produce a ‘1’. Proper status will not be given using Data# Polling if the address is in the invalid range.
Toggle Bit
During the internal Program or Erase operation, any consec­utive attempts to read D[6] will produce alternating 0s and 1s, i.e., toggling between 0 and 1. When the internal Pro­gram or Erase operation is completed, the toggling will stop.
System Memory Mapping
The LPC address sequence is 32 bits long. The SST49LF040 will respond to addresses mapped into the top of the 4GB memory space from FFFF FFFFH to FF00 0000H or bottom of the 4GB memory space from 00000 000H to 00FF FFFFFH. Address bits A decoded as memory addresses for SST49LF040, A are device ID strapping bits, A23 directs Reads and Writes to memory locations (A tions (A
Refer to Multiple Device Selection for more detail in device ID strapping decoding. Refer to Figures 4 and 5 for System Memory Boot Configuration.
23
= 0).
= 1) or to register access loca-
23
18-A0
are
22-A19
Multiple Device Selection
Multiple LPC Flash devices may be strapped to increase memory densities in a system. The four ID strapping pins, ID[3:0], allow up to 16 devices to be attached to the same bus by using different ID strapping in a system. Equal den­sity must be used with multiple devices. BIOS support, bus loading or the attaching bridge may limit this number. The maximum “window” of the LPC array visible at one time is 16 MByte.
Applications that boot from the top address of the 4 GByte system memory map; the ID strapping is sequentially incremented downward as shown in Figure 4. For applica­tions that boot from the bottom address of the 4 GByte sys­tem memory map, the ID strapping increments upward but non-sequentially as shown in Figure 5.
©2001 Silicon Storage Technology, Inc. S71213-00-000 11/01 562
10
4 Mbit LPC Flash SST49LF040
Advance Information
With hardware strapping, ID bits in the address field is included in every LPC address memory cycle. The address bits [A22: A19] are used to select the device with proper IDs. The ID strapping bits in the address field will be decoded depending on where the device is mapped on the 4 GByte system memory map. See Table 2 for ID address bits decoding. The device will compare these bits with ID[3:0]’s strapping values. If there is a mismatch, the device will ignore the remainder of the cycle.
TABLE 2: ID STRAPPING VALUES FOR SST49LF040
Address Bits [A
Decoding
Device #
Hardware Strapping
4 GByte System Memory
ID[3:0] Top Bottom
0 (Boot device) 0000 1111b 0001b
1 0001 1110b 0000b
2 0010 1101b 0011b
3 0011 1100b 0010b
4 0100 1011b 0101b
5 0101 1010b 0100b
6 0110 1001b 0111b
7 0111 1000b 0110b
8 1000 0111b 1001b
9 1001 0110b 1000b
10 1010 0101b 1011b
11 1011 0100b 1010b
12 1100 0011b 1101b
13 1101 0010b 1100b
14 1110 0001b 1111b
15 1111 0000b 1110b
1. Address bits A22-A19 decoding for multiple device selection depends on whether the device is mapped from the top of the 4GB system memory map or from the bottom of the 4GB system memory map.
22-A19
1
T2.3 562
]
(Boot Block)
Boot Device #0
(Boot Block)
Device #1
(Boot Block)
Device #2
(Boot Block)
Device #3
(Boot Block)
Device #14
(Boot Block)
Device #15
Device #0
Device #1
Device #2
Device #3
FFFF FFFFH
8 MByte
Memory Access
FF80 0000H FF7F FFFFH
8 MByte
Register Access
Device #14
Device #15
FF00 0000H
562 ILL F01.1
FIGURE 4: B
©2001 Silicon Storage Technology, Inc. S71213-00-000 11/01 562
OOT CONFIGURATION FROM THE TOP
OF THE 4 GBYTE SYSTEM MEMORY MAP
11
Device #14
Device #15
Device #2
Device #3
Device #0
Device #1
(Boot Block)
Device #14
(Boot Block)
Device #15
(Boot Block)
Device #2
(Boot Block)
00FF FFFFH
8 MByte
Register Access
0080 0000H 007F FFFFH
8 MByte
Memory Access
4 Mbit LPC Flash
SST49LF040
Advance Information
Registers
There are two registers available on the SST49LF040, the General Purpose Inputs Registers (GPI_REG) and the JEDEC ID Registers. Since multiple LPC memory devices may be used to increase memory densities, these registers appear at its respective address location in the 4 GByte system memory map. Unused register locations will read as 00H. Any attempt to read registers during internal Write operation will respond as “Write Operation Status Detec­tion” (Data# Polling or Toggle Bit). Tables 4 and 5 list GPI_REG and JEDEC ID address locations for SST49LF040 with its respective device strapping.
TABLE 3: GENERAL PURPOSE INPUTS REGISTER
Pin #
Bit Function
7:5 Reserved - -
4GPI[4]
Reads status of general purpose input pin
3GPI[3]
Reads status of general purpose input pin
2GPI[2]
Reads status of general purpose input pin
1GPI[1]
Reads status of general purpose input pin
0GPI[0]
Reads status of general purpose input pin
32-PLCC 32-TSOP
30 6
311
412
513
614
T3.1 562
Device #3
(Boot Block)
Boot Device #0
(Boot Block)
Device #1
0000 0000H
562 ILL F02.3
General Purpose Inputs Register
The GPI_REG (General Purpose Inputs Register) passes the state of GPI[4:0] pins at power-up on the SST49LF040. It is recommended that the GPI[4:0] pins be in the desired state before LFRAME# is brought low for the beginning of the next bus cycle, and remain in that state until the end of the cycle. There is no default value since this is a pass­through register. See Table 3, General Purpose Inputs Register, for the GPI_REG bits and functions and Tables 4 and 5 for memory address location for its respective device strapping.
FIGURE 5: BOOT CONFIGURATION FROM THE
BOTTOM OF THE 4 GBYTE SYSTEM
EMORY MAP
M
©2001 Silicon Storage Technology, Inc. S71213-00-000 11/01 562
12
4 Mbit LPC Flash SST49LF040
Advance Information
JEDEC ID Registers
The JEDEC ID registers identify the device as SST49LF040 and manufacturer as SST in LPC mode. See
tive JEDEC ID location. Register is not available for Read when the device is in Erase/Program operation. Unused register locations will read as 00H.
Tables 4 and 5 for memory address location for its respec-
TABLE 4: MEMORY MAP REGISTER ADDRESSES (TOP OF THE 4GB SYSTEM MEMORY)
JEDEC ID
Device # GPI_REG
0 FF7C 0100H FF7C 0000H FF7C 0001H
1 FF74 0100H FF74 0000H FF74 0001H
2 FF6C 0100H FF6C 0000H FF6C 0001H
3 FF64 0100H FF64 0000H FF64 0001H
4 FF5C 0100H FF5C 0000H FF5C 0001H
5 FF54 0100H FF54 0000H FF54 0001H
6 FF4C 0100H FF4C 0000H FF4C 0001H
7 FF44 0100H FF44 0000H FF44 0001H
8 FF3C 0100H FF3C 0000H FF3C 0001H
9 FF34 0100H FF34 0000H FF34 0001H
10 FF2C 0100H FF2C 0000H FF2C 0001H
11 FF24 0100H FF24 0000H FF24 0001H
12 FF1C 0100H FF1C 0000H FF1C 0001H
13 FF14 0100H FF14 0000H FF14 0001H
14 FF0C 0100H FF0C 0000H FF0C 0001H
15 FF04 0100H FF04 0000H FF04 0001H
Manufacturer Device
T4.5 554
TABLE 5: MEMORY MAP REGISTER ADDRESSES (BOTTOM OF THE 4GB SYSTEM MEMORY)
JEDEC ID
Device # GPI_REG
0 008C 0100H 008C 0000H 008C 0001H
1 0084 0100H 0084 0000H 0084 0001H
2 009C 0100H 009C 0000H 009C 0001H
3 0094 0100H 0094 0000H 0094 0001H
4 00AC 0100H 00AC 0000H 00AC 0001H
5 00A4 0100H 00A4 0000H 00A4 0001H
6 00BC 0100H 00BC 0000H 00BC 0001H
7 00B4 0100H 00B4 0000H 00B4 0001H
8 00CC 0100H 00CC 0000H 00CC 0001H
9 00C4 0100H 00C4 0000H 00C4 0001H
10 00DC 0100H 00DC 0000H 00DC 0001H
11 00D4 0100H 00D4 0000H 00D4 0001H
12 00EC 0100H 00EC 0000H 00EC 0001H
13 00E4 0100H 00E4 0000H 00E4 0001H
14 00FC 0100H 00FC 0000H 00FC 0001H
15 00F4 0100H 00F4 0000H 00F4 0001H
©2001 Silicon Storage Technology, Inc. S71213-00-000 11/01 562
13
Manufacturer Device
T5.5 554
4 Mbit LPC Flash
SST49LF040
Advance Information
PARALLEL PROGRAMMING MODE
Reset
Driving the RST# low will initiate a hardware reset of the SST49LF040.
Device Operation
Commands are used to initiate the memory operation func­tions of the device. The data portion of the software com­mand sequence is latched on the rising edge of WE#. During the software command sequence the row address is latched on the falling edge of R/C# and the column address is latched on the rising edge of R/C#.
Read
The Read operation of the SST49LF040 device is con­trolled by OE#. OE# is the output control and is used to gate data from the output pins. Refer to the Read cycle tim­ing diagram, Figure 19, for further details.
Byte-Program Operation
The SST49LF040 device is programmed on a byte-by-byte basis. Before programming, one must ensure that the sec­tor in which the byte is programmed is fully erased. The Byte-Program operation is initiated by executing a four­byte-command load sequence for Software Data Protec­tion with address (BA) and data in the last byte sequence. During the Byte-Program operation, the row address (A
) is latched on the falling edge of R/C# and the column
A
0
address (A
) is latched on the rising edge of R/C#.
21-A11
The data bus is latched on the rising edge of WE#. The Program operation, once initiated, will be completed, within 20 µs. See Figure 23 for Program operation timing diagram and Figure 35 for its flowchart. During the Program opera­tion, the only valid reads are Data# Polling and Toggle Bit. During the internal Program operation, the host is free to perform additional tasks. Any commands written during the internal Program operation will be ignored.
Sector-Erase Operation
The Sector-Erase operation allows the system to erase the device on a sector-by-sector basis. The sector architecture is based on uniform sector size of 4 KByte. The Sector­Erase operation is initiated by executing a six-byte com­mand load sequence for Software Data Protection with Sector-Erase command (30H) and sector address (SA) in the last bus cycle. The internal Erase operation begins after the sixth WE# pulse. The End-of-Erase can be determined using either Data# Polling or Toggle Bit methods. See Fig­ure 24 for Sector-Erase timing waveforms. Any commands written during the Sector-Erase operation will be ignored.
10
Block-Erase Operation
The Block-Erase Operation allows the system to erase the device in 64 KByte uniform block size. The Block-Erase operation is initiated by executing a six-byte command load sequence for Software Data Protection with Block-Erase command (50H) and block address. The internal Block­Erase operation begins after the sixth WE# pulse. The End-of-Erase can be determined using either Data# Polling or Toggle Bit methods. See Figure 25 for Block-Erase tim­ing waveforms. Any commands written during the Block­Erase operation will be ignored.
Chip-Erase Operation
The SST49LF040 device provides a Chip-Erase operation, which allows the user to erase the entire memory array to the “1s” state. This is useful when the entire device must be quickly erased.
The Chip-Erase operation is initiated by executing a six­byte Software Data Protection command sequence with Chip-Erase command (10H) with address 5555H in the last byte sequence. The internal Erase operation begins with the rising edge of the sixth WE#. During the internal Erase operation, the only valid read is Toggle Bit or Data# Polling. See Table 8 for the command sequence, Figure 26 for Chip-Erase timing diagram, and Figure 38 for the flowchart. Any commands written during the Chip-Erase operation will be ignored.
-
Write Operation Status Detection
The SST49LF040 device provides two software means to detect the completion of a Write (Program or Erase) cycle, in order to optimize the system write cycle time. The soft­ware detection includes two status bits: Data# Polling
) and Toggle Bit (DQ6). The End-of-Write detection
(DQ
7
mode is enabled after the rising edge of WE# which ini­tiates the internal Program or Erase operation.
The actual completion of the nonvolatile write is asynchro­nous with the system; therefore, either a Data# Polling or Toggle Bit read may be simultaneous with the completion of the Write cycle. If this occurs, the system may possibly get an erroneous result, i.e., valid data may appear to con­flict with either DQ
or DQ6. In order to prevent spurious
7
rejection, if an erroneous result occurs, the software routine should include a loop to read the accessed location an additional two (2) times. If both reads are valid, then the device has completed the Write cycle, otherwise the rejec­tion is valid.
©2001 Silicon Storage Technology, Inc. S71213-00-000 11/01 562
14
4 Mbit LPC Flash SST49LF040
Advance Information
Data# Polling (DQ7)
When the SST49LF040 device is in the internal Program operation, any attempt to read DQ
will produce the com-
7
plement of the true data. Once the Program operation is completed, DQ though DQ
will produce true data. Note that even
7
may have valid data immediately following the
7
completion of an internal Write operation, the remaining data outputs may still be invalid: valid data on the entire data bus will appear in subsequent successive Read cycles after an interval of 1 µs. During internal Erase opera­tion, any attempt to read DQ internal Erase operation is completed, DQ
will produce a ‘0’. Once the
7
will produce a
7
‘1’. The Data# Polling is valid after the rising edge of fourth WE# pulse for Program operation. For Sector-, Block-, or Chip-Erase, the Data# Polling is valid after the rising edge of sixth WE# pulse. See Figure 21 for the Data# Polling tim­ing diagram and Figure 36 for a flowchart. Proper status will not be given using Data# Polling if the address is in the invalid range.
Toggle Bit (DQ
)
6
During the internal Program or Erase operation, any con­secutive attempts to read DQ
will produce alternating 0s
6
and 1s, i.e., toggling between 0 and 1. When the internal Program or Erase operation is completed, the toggling will stop. The device is then ready for the next operation. The Toggle Bit is valid after the rising edge of fourth WE# pulse for Program operation. For Sector-, Block-, or Chip-Erase, the Toggle Bit is valid after the rising edge of sixth WE# pulse. See Figure 22 for the Toggle Bit timing diagram and Figure 36 for a flowchart.
Data Protection
The SST49LF040 device provides both hardware and soft­ware features to protect nonvolatile data from inadvertent writes.
Hardware Data Protection
Noise/Glitch Protection: not initiate a Write cycle.
Power Up/Down Detection: The Write operation is
V
DD
inhibited when V
Write Inhibit Mode: the Write operation. This prevents inadvertent writes during power-up or power-down.
A WE# pulse of less than 5 ns will
is less than 1.5V.
DD
Forcing OE# low, WE# high will inhibit
Software Data Protection (SDP)
The SST49LF040 provides the JEDEC approved Software Data Protection scheme for all data alteration operation, i.e., Program and Erase. Any Program operation requires the inclusion of a series of three-byte sequence. The three­byte load sequence is used to initiate the Program opera­tion, providing optimal protection from inadvertent Write operations, e.g., during the system power-up or power­down. Any Erase operation requires the inclusion of a six­byte load sequence. The SST49LF040 device is shipped with the Software Data Protection permanently enabled. See Table 8 for the specific software command codes. Dur­ing SDP command sequence, invalid commands will abort the device to Read mode, within T
RC.
Electrical Specifications
The AC and DC specifications for the LPC interface sig­nals (LA0[3:0], LFRAME, LCLCK and RST#) as defined in Section 4.2.2.4 of the PCI local Bus specification, Rev.
2.1. Refer to Table 9 for the DC voltage and current spec­ifications. Refer to Tables 13 through 16 and Tables 19 through 21 for the AC timing specifications for Clock, Read, Write, and Reset operations.
Product Identification
The Product Identification mode identifies the device as the SST49LF040 and manufacturer as SST.
TABLE 6: P
Manufacturer’s ID 0000H BFH
Device ID
SST49LF040 0001H 51H
RODUCT IDENTIFICATION
Address Data
T6.1 562
Design Considerations
SST recommends a high frequency 0.1 µF ceramic capac­itor to be placed as close as possible between V
less than 1 cm away from the VDD pin of the device.
V
SS
Additionally, a low frequency 4.7 µF electrolytic capacitor from V
to VSS should be placed within 5 cm of the V
DD
pin. If you use a socket for programming purposes add an additional 1-10 µF next to each socket.
The RST# pin must remain stable at V
for the entire dura-
IH
tion of an Erase operation. WP# must remain stable at V for the entire duration of the Erase and Program operations for non-boot block sectors. To write data to the top boot block sectors, the TBL# pin must also remain stable at V for the entire duration of the Erase and Program operations.
DD
and
DD
IH
IH
©2001 Silicon Storage Technology, Inc. S71213-00-000 11/01 562
15
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