4 Mbit ROM + 1 Mbit / 256 Kbit SRAM ROM/RAM Combo
SST30VR041 / SST30VR043
Preliminary Specifications
FEATURES:
• ROM + SRAM ROM/RAM Combo
– SST30VR041: 512K x8 ROM + 128K x8 SRAM
– SST30VR043: 512K x8 ROM + 32K x8 SRAM
•ROM/RAM combo on a monolithic chip
•Equivalent ComboMemory (Flash + SRAM): SST31LF041A for code development and pre-production
•Wide Operating Voltage Range: 2.7-3.3V
•Chip Access Time
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SST30VR041 |
70 ns and 150 ns |
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SST30VR043 |
150 ns |
•Low Power Dissipation:
–Standby: 1.0 µW (Typical)
–Operating: 3.0 mW (Typical)
•Fully Static Operation
–No clock or refresh required
•Three state Outputs
•Packages Available
–32-pin TSOP (8mm x14mm)
PRODUCT DESCRIPTION
The SST30VR041/043 are ROM/RAM combo chips consisting of 4 Mbit Read Only Memory organized as 512 KBytes and a Static Random Access Memory organized as either 128 or 32 KBytes. Output Enable Input (OE#) is pin-shared with RAMCS# (RAM Enable Input) signal in order to maintain the standard 32-pin TSOP package.
The device is fabricated using SST’s advanced CMOS low power process technology.
The SST30VR041/043 have an output enable input for precise control of the data outputs. It also has two (2) separate chip enable inputs for selection of either RAM or ROM and for minimizing current drain during power-down mode.
The SST30VR041/043 is particularly well suited for use in low voltage (2.7-3.3V) supplies such as pagers, organizers and other handheld applications.
FUNCTIONAL BLOCK DIAGRAM
ROMCS#
OE#/RAMCS#
WE#
AMS-A0
Control |
Circuit |
Address Buffer
RAMCS#
OE#
WE#
RAM
ROMCS#
OE#
ROM
Data Buffer
DQ7-DQ0
Note: AMS = Most Significant Address |
381 ILL B1.2 |
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©2001 Silicon Storage Technology, Inc. |
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. |
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S71134-02-000 4/01 |
381 |
ComboMemory is a trademark of Silicon Storage Technology, Inc. |
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These specifications are subject to change without notice. |
4 Mbit ROM + 1 Mbit / 256 Kbit SRAM ROM/RAM Combo SST30VR041 / SST30VR043
Preliminary Specifications
A11 1
A9 2
A8 3
A13 4
A14 5
A17 6 WE#
7
VDD 8 A18
9
A16 10
A15 11
A12 12
A7 13
A6 14
A5 15
A4 16
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32 |
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OE#/RAMCS# |
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31 |
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A10 |
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30 |
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ROMCS# |
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29 |
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DQ7 |
Standard Pinout |
28 |
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DQ6 |
27 |
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DQ5 |
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Top View |
26 |
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DQ4 |
25 |
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DQ3 |
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Die Up |
24 |
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VSS |
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23 |
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DQ2 |
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22 |
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DQ1 |
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21 |
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DQ0 |
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20 |
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A0 |
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19 |
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A1 |
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18 |
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A2 |
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17 |
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A3 |
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381 ILL F01.0
FIGURE 1: PIN ASSIGNMENTS FOR 32-PIN TSOP
TABLE 1: PIN DESCRIPTION
Symbol |
Pin Name |
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AMS1-A0 |
Address Inputs, for ROM: AMS = A18, for RAM: AMS =A16 for SST30VR041 |
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A14 for SST30VR043 |
WE# |
Write Enable Input |
OE#/RAMCS# |
Output Enable/RAM Enable Input |
ROMCS# |
ROM Enable Input |
DQ7-DQ0 |
Data Input/Output |
VDD |
Power Supply |
VSS |
Ground |
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T1.2 381 |
1. AMS = Most significant address
©2001 Silicon Storage Technology, Inc. |
S71134-02-000 4/01 381 |
2
4 Mbit ROM + 1 Mbit / 256 Kbit SRAM ROM/RAM Combo SST30VR041 / SST30VR043
Preliminary Specifications
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.)
Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -20°C to +85°C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C Voltage on Any Pin Relative to VSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to VDD + 0.5V Voltage on VDD Supply Relative to VSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 4.0V Power Dissipation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W Soldering Temperature (10 Seconds Lead Only) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
OPERATING RANGE |
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Range |
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Ambient Temp |
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VDD |
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Commercial |
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0°C to +70°C |
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2.7-3.3V |
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Extended |
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-20°C to +85°C |
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2.7-3.3V |
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AC CONDITIONS OF TEST |
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Input Pulse Level . . . . . . . . . . . . . . . . . . . . |
0-VDD |
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Input & Output Timing Reference Levels . . . |
VDD/2 |
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Input Rise/Fall Time . . . . . . . . . . . . . . . . . . . |
5 ns |
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Output Load |
. . . . . . . . . . . . . . . . . . . . . . . . . CL = |
30 pF for 70 ns |
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Output Load |
. . . . . . . . . . . . . . . . . . . . . . . . . CL = 100 pF for 150 ns |
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TABLE |
2: RECOMMENDED DC OPERATING CONDITIONS |
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Symbol |
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Parameter |
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Min |
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Max |
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Units |
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VDD |
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Supply Voltage |
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2.7 |
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3.3 |
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V |
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VSS |
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Ground |
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0 |
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0 |
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V |
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VIH |
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Input High Voltage |
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2.4 |
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VDD + 0.5 |
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V |
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VIL |
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Input Low Voltage |
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-0.3 |
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0.3 |
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V |
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T2.0 381 |
TABLE |
3: DC OPERATING CHARACTERISTICS |
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VDD = 3.0±0.3V |
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Symbol |
Parameter |
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Min |
Max |
Units |
Test Conditions |
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IDD1 |
ROM Operating Supply Current |
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4.0+1.1(f)1 |
mA |
ROMCS# = VIL, RAMCS# = VIH, |
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VIN = VIH or VIL, II/O = Opens |
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IDD2 |
RAM Operating Supply Current |
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2.5+1(f)1 |
mA |
ROMCS# = VIH, RAMCS# = VIL, II/O = Opens |
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ISB |
Standby VDD Current |
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10 |
µA |
ROMCS# ≥ VDD-0.2V, RAMCS# ≥ |
VDD-0.2V |
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VIN ≥ VDD-0.2V or VIN ≤ 0.2V |
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ILI |
Input Leakage Current |
-1 |
1 |
µA |
VIN = VSS to VDD |
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ILO |
Output Leakage Current |
-1 |
1 |
µA |
ROMCS# = RAMCS# = VIH or OE# = VIH or |
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WE# = VIL, VI/O = VSS to VDD |
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VOL |
Output Low Voltage |
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0.4 |
V |
IOL = 1.0 mA |
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VOH |
Output High Voltage |
2.2 |
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V |
IOH = -0.5 mA |
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1. f = Frequency of operation (MHz) = 1/cycle time |
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T3.4 381 |
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©2001 Silicon Storage Technology, Inc. |
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3 |
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S71134-02-000 4/01 381 |
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