Silicon Laboratories SiLinkPS-EVB User Manual

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Page 1

SiLINKPS-EVB USER’S GUIDE

High

Voltage

Battery Supply

Low

Voltage

VDD

Supply

Jumper

Selection

JP2, JP3,

JP4

JP6 VDD on/off

JP5 3.3 V/5 V Selector

VDC in

VBRNG

VBHI

VBLO

VDD

AN74

1. Introduction

The SiLinkPS-EVB is a system power supply board that provides all the necessary supply voltages for a variety of Silicon Laboratories’ ProSLIC and silicon DAA evaluation boards. When used with an appropriate ac/ dc wall adapter, the SiLinkPS-EVB can provide up to 25 W of total output power. Table 1 lists some typical voltages and currents at the power supply outputs.

Table 1. Power Supply Specifications

Input/Output Voltage Current Power

VBRNG –96 V 100 mA 9.6 W

VBHI –52 V or

VBLO –26 V 200 mA 5.2 W

Any combination of outputs is possible as long as the simultaneous total power from all outputs does not exceed the maximum rated 25 W and can be sufficiently supported by the input power from the V

The SiLinkPS-EVB is designed with the same footprint as all ProSLIC evaluation board daughter cards

9–15 V 2.5 A 22–37 W

100 mA 5.2 W or

–78 V

7.8 W

3.3 V/5 V 1 A 3.3 W/5 W

allowing it to be used in conjunction with multiple ProSLIC daughter cards to create a modular evaluation platform.

The SiLinkPS-EVB circuit is based on two power supply controllers from Linear Technology that provide high efficiency and low bill-of-materials cost. Both circuits can be synchronized to the same switching frequency to reduce power supply switching noise. The outputs can be configured to support both internal and external ringing architectures by setting the provided jumpers to set the desired output voltages. Further modifications are possible to realize specific output voltage and current requirements provided the total output power does not exceed the rated maximum. Schematic capture and layout gerber files are available for integration into specific applications. Figure 1 illustrates a simplified block diagram of the SiLinkPS-EVB supply board.

2. Operating Instructions

The SiLinkPS-EVB board should always be connected to the ProSLIC evaluation board platform prior to turning on the power supply. Plugging any ProSLIC board into a live high-voltage supply can permanently damage the ProSLIC ICs. The user should exercise caution when touching any part of the SiLinkPS-EVB because dangerous high voltages are present and can cause injury.

Figure 1. SiLinkPS-EVB Power Supply Simplified Block Diagram

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AN74

FREQUENCY (kHz)

100

(kΩ)

300

1000

100

200 1000

900

800700600

500

400

2.1. High-Voltage Battery Supply

The schematic for this power circuit is illustrated in Figure 3 on page 4. The LTC3704 dc-dc controller IC is used to drive an external MOSFET and a multi-tap transformer to create four equal high-voltage negative outputs, VNEG (See Table 2), from the dc input supply. Only one output is regulated via close-loop feedback. The other three outputs are cross-regulated to the first output via the transformer ratio. The LTC3704’s negative feedback input eliminates inverting circuitry when creating negative outputs from a positive input. The six-winding 1:1 ratio transformer is configured in a manner that minimizes the need for multiple highvoltage output filter capacitors.

2.2. VNEG Voltage Adjustment

The transformer, T1, has four secondary windings, each producing an equal negative voltage, VNEG. These four windings are connected in series through the diode rectifying circuits to produce four negative voltage potentials with voltage levels equal to multiples from 1 to 4 of the VNEG magnitude. Any adjustment made to the VNEG has a direct effect on the voltage levels on all negative outputs.

Resistor R23 can be modified to realize custom output voltages as defined in the following equation.

VNEG = (1.23 x R23/R22) + 1.23

The SiLinkPS-EVB is shipped with R23 = 33.2 k and R22 = 1.65 k for VNEG equal to 26 V.

The VBLO is normally used for off-hook state and its voltage level can be programmed by the setting on the

JP7 jumper. The voltage on the VBHI and VBRNG outputs can be programmed by moving the jumper settings on JP2, JP3, and JP4. Table 2 provides several popular configurations and the required jumper settings.

2.3. Frequency Adjustment

The LTC3704 can be configured to run at switching frequencies from 50 kHz to 1 MHz allowing flexibility to choose the optimal efficiency/cost point for each specific application. Resistor R18 programs the switching frequency according to the characteristic curve shown in Figure 2.

Figure 2. Timing Resistor R18 Value

Table 2. Popular Application Configurations and Jumper Settings

Dual ProSLIC

Part Number

Si3211/Si3212 Si3220/Si3232

Si3225 N/A (external) — –52 V

PK-PK Ringing

Amplitude

75 V — –78 V

90 V –104 V

VBRNG VBHI VBLO JP2 JP3 JP4 JP7

4xVNEG

–26 V

3xVNEG

VNEG

—–26V

VNEG

–26 V

2xVNEG

Rev. 0.2 2

VNEG

2–3 2–3 1–2 2–3

1–2 — — 2–3

2–3 — 2–3 2–3

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AN74

2.4. Low Voltage VDD Supply

The low-voltage supply provides a switchable 3.3 V or 5 V output with a 1 A maximum load current. The schematic for this power supply circuit is illustrated in Figure 4 on page 5. The LT1375 IC integrated 1.5 A bipolar switching transistor and current-sensing circuitry eliminate external power transistors and sense resistors and provide a high-efficiency V footprint. The switching frequency is internally fixed at 500 kHz and can be synchronized to higher frequencies up to 1 MHz when a higher frequency signal (above 550 kHz) is provided on the SYNC pin. Table 3 provides the jumper settings for selecting a 3.3 V or 5 V output as well as for disconnecting the V

supply in a small

supply altogether.

Table 3. VDD Supply Jumper Settings

Function JP5 JP6 Comments

output

enable

3.3 V/5 V configuration

— 1–2 VDD connected

— 2–3 V

1–2 — 5 V selected

2–3 — 3.3 V selected

disconnected

2.5. Frequency Synchronization

The LTC3704 is wired as a clock master device to provide its switching frequency to the SYNC pin on the LT1375 IC. To synchronize the frequency between the two power circuits, R18 needs to be adjusted to set the LTC3704 switching frequency at or above 550 kHz. The LT1375 IC operates at its internal fixed 500 kHz and is only synchronized with the LTC3704 frequency when it senses the frequency on the SYNC pin going above 550 kHz. The SiLinkPS-EVB power circuits are designed to operate safely with switching frequency on the LTC3704 ranging from 200 kHz to 1 MHz.

2.6. Initialization Steps

1. Configure all jumpers according to the application requirements.

2. (Optional) Plug in the input power source and measure all outputs to verify correct settings.

3. Unplug input power source.

4. Assemble all ProSLIC daughter cards.

5. Plug in the input power source.

2.7. Cost-Optimized Design

The negative high-voltage circuit can be reduced for cost optimization. The four equal VNEG outputs in series arrangement provide some discrete voltage adjustments to the outputs but require additional rectifying diode circuits and increase cost. Figure 6 on page 8 illustrates a lost-optimized design with two negative outputs. The first secondary winding produces a negative voltage according to the VNEG equation described in the previous section to produce the VBLO voltage. The other three secondary windings are connected in series to produce a negative voltage with an amplitude of 3 x VNEG. This output is connected in series with the VBLO output to generate VBHI output with a voltage level of 4 x VNEG.

The use of the simplified secondary rectifying circuit, smaller transformer, and switching MOSFET lower the component costs and also reduce the maximum output power of the negative high-voltage circuit to 13 W.

Rev. 0.2 3

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AN74

IntVcc

-78Vdc

-104Vdc

-25Vdc

-96V

DC_Input

-52V

-78V

-52V

VBRNG

VBHI

VBLO

DC_Input_Diode

VDD

DC_Input_Diode

VBLO

VBHI

VBRNG

Gate

-52Vdc

VBHI JP3 JP4

-52V X 2-3

-78V 2-3 1-2

-96V 1-2 1-2

VBRNG JP2

-96V 1-2

n/c 2-3

Post-regulator

Turn-on at 9.9V

Turn-off at 9.1V

(Farside)

VBLO JP7

-25V 2-3

-50V 2-1

10uF, 25V

B1100B

JS3

CONN SOCKET 5x2

10uF, 25V

4.7k

JS1

CONN SOCKET 5x2

112

334

556

778

9910

10k

100k

C24

330uF 35V

10uH

113

C20

100pF

C25

4.7uF, 50V

LTC3704EMS

Run1NFB3Ith

Gnd

Sense

Gate

IntVcc

Vin

Freq4Mode/Sync

IRL540NS

C21

4.7uF, 10V

C22

.001uF

C19

4.7uF, 50V

R21

82k

B1100B

10k

1uF, 25V

R23

33.2k, 1%

R15

10k

R22

1.65k, 1%

R20

.02, 1%

C11

1uF, 25V

JP3

123

JP7

123

CMR3-02

JP4

123

C15

1uF, 25V

T1D

R17

4.7

T1C

C18

0.1uF

T1F

JS2

CONN SOCKET 2x2/SM

C14

.001uF

T1E

T1B

D12

B1100B

C17

10uF, 25V

C13

1uF, 100V

JS4

CONN SOCKET 5x2

JP1

CONN HEADER 2x2/SM

112

334

R14

82k

R19

R13

13k

C23

.001uF

C12

10uF, 25V

D11

B1100B

C10

1uF, 100V

FZT953CT

JS5

CONN SOCKET 5x2

112

334

556

778

9910

R11

10k

R25

47V

JP2

123

T1A

VP5

R18

31.6k, 1%

D10

47V

4 Rev. 0.2

Figure 3. High-Voltage Negative Battery Supply

Page 5

VDD

DC_Input_Diode

Gate

5V 1-2

3.3V 2-3

5V or 3.3V

1A Max

VDD on

VDD off

VDD

1uF, 25V

R26

10k

C26

100pF

4.7nF

1N4148

JP5

123

0.1uF

22uF, 6.3V

B1100B

JP6

123

LT1375CS8

BOOST1Vin2Vsw3SHDN

SYNC

GND

11.5k, 1%

31.6k, 1%

16.2k, 1%

R28

10k

15uH, 1.8A

R27

10k

AN74

Supply

Figure 4. Low-Voltage V

Rev. 0.2 5

Page 6

AN74

6 Rev. 0.2

Figure 5. PS Board Silkscreen

Page 7

3. Si Link PS–EVB Bill of Materials

Re fere nce De scription Pa rt Num be r Ma nufa cture r

C1 22uF, 6.3V C2 0.1uF, 10V C3,C8,C11,C15 1uF, 25V C4 4.7nF, 10V C5,C9,C12,C17 10uF, 25V TMK432BJ106KM Taiyo Yuden C7,C10,C13 1uF, 100V 18121C105KAT9A United Chemi-con C22,C14 .001uF, 25V 08055C102KAT AVX C18 0.1uF, 35V 08053C104KAT AV X C16, C19 4.7uF, 50V C5750X7R1H475K TDK C20,C26 100pF, 25V 08055A101KAT AVX C21 4.7uF, 10V LMK316BJ475 Taiyo Yuden C23 .001uF, 25V C24 330uF, 35V D2 1N4148 Diodes, Inc. D3 ES3A/B ES3A/B Diodes, Inc. D1,D5,D8,D11,D12 B1100B B160B Diodes, Inc. D9,D10 47V Zener JP1 CONN HEADER 2x2/SM TSM-102-02-T-DV Samtec JP2,JP3,JP4,JP5,JP6,JP7 HEADER 3X1 2303-6111TN 3M JS1,JS3,JS4,JS5 CONN SOCKET 5x2 SSQ-1-05-24-F-D Samtec JS2 CONN SOCKET 2x2/SM SSM-102-L-DV-TR Samtec J1 CONN PW R 2-P A DC-002-1 Adam Tech L1 15uH, 1.8A UP1B-150 Coiltronics L2 10uH CTX32CT-100 Coiltronics Q1 FZT953CT FZT953CT Zetex Q2 IRL540NS IRL540NS Int. Rectifier R1 11.5k, 1% R2 31.6k



R3 16.2k



R4,R9,R11,R15,R26,R27,R28 10k



R6 10k



R7 100k



R8 4.7k



R13 13k



R21,R14 82k



R17 4.7



R18 120k



R19 47



R20 15m



LRC1206-R015K IRC

R22 1.65k



R23 33.2k



R25 0



T1 VP5 VPH5-0155 Coiltronics U1 LT1375CS8 LT1375CS8 LTC U2 LTC3704EMS LTC3704CMS LTC

Rev. 0.2 7

AN74

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AN74

IntVcc

-24Vdc

DC_Input -96Vdc

VBHI

VBLO

DC_Input_Diode

VDD

VBRNG

VBLO

VBHI

Turn-on at 9V

Turn-off at 8.2V

T1: 10uH

L2 and C16 optional for lower output noi se.

In Proto:

R23 = 20.5k

R22 = 1.1k

C5 = 2 x 1uF / 100V in parallel

R4 = 3 x 10k in series

Q2 is upside-down

36k = 500kHz

20k = 1MHz

10~15Vdc

Input

JS4

CONN SOCKET 5x2

2.2uF, 100V

C16

10uF, 25V

JS3

CONN SOCKET 5x2

112

334

556

778

9910

30k

C24

330uF 35V

10uH

C20

680pF

JP1

113

LTC3704EMS

Run1NFB3Ith

Gnd

Sense

Gate

IntVcc

Vin

Freq4Mode/Sync

C22

.01uF

C21

4.7uF, 10V

R21

82k

C19

4.7uF, 50V

R20

.015, 5%

JS1

CONN SOCKET 5x2

R15

10k

R23

34.8k, 1%

R22

1.87k, 1%

Si4480DY

2 3

7 8

ES1D

B340

R18

36k

T1D

R17

4.7

T1C

C18

0.1uF

T1F

T1E

C14

.001uF

T1B

D12

B1100B

C17

10uF, 25V

JS2

CONN SOCKET 2x2

R14

82k

R13

16k

JS5

CONN SOCKET 5x2

112

334

556

778

9910

T1A

VP5

8 Rev. 0.2

Figure 6. Cost-Optimized Dual Output Battery Supply

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AN74

C18

08053C104KAT AVX

C5750X7R2A225M TDK C22, C14 1 nF, 25 V, X7R C16*, C17

TMK432BJ106KM Taiyo Yuden C19

UMK325F475KH Taiyo Yuden C20

08055A101KAT AVX C21

LMK316BJ475 Taiyo Yuden C24

35CV330AX Sanyo D3 40 V, 3 A B340 Diodes, Inc. D4 200 V, 1 A ES1D Diodes, Inc. D12 100 V, 1 A Shottky B1100B Diodes, Inc. L2*

CTX32CT-470 Coiltronics Q2 80 V Si4480DY Vishay R4 R13 R21, R14 R15 R17 R18 R20 R22 R23 T1

SP36-0100-10 Transpower U2 Switching Regulator LTC3704EMS LTC

Note: * Optional components used to reduce output noise if necessary.

4. Cost-Optimized Dual Output Battery Supply Bill of Materials

Reference Description Part Number Manufacturer

0.1 F, 25 V, X7R

2.2 F, 100 V, X7R

10 F, 25 V, X5R

4.7 F, 50 V, X7R 100 pF, 50 V, NP0

4.7 F, 10 V, X5R 330 F, 35 V

10 H, 300 mA

30 k, 5%, 0.25 W 16 k, 5%, 0.1 W 82 k, 5%, 0.1 W 10 k, 5%, 0.1 W

4.7 , 5%, 0.1 W 36 k, 5%, 0.1 W 15 m, 5%, 0.25 W

1.87 k, 1%, 0.1 W

34.8 k, 1%, 0.1 W 10 H

Rev. 0.2 9

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DOCUMENT CHANGE LIST

Revision 0.1 to Revision 0.2

 New power supply schematics

Updated Figures 3, 4, and 5.

 Updated document to support two levels of VBATL

voltage.

10 Rev. 0.2

Page 11

NOTES:

AN74

Rev. 0.2 11

Page 12

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Silicon Laboratories intends to provide customers with the latest, accurate, and in-depth documentation of all peripherals and modules available for system and software implementers using or intending to use the Silicon Laboratories products. Characterization data, available modules and peripherals, memory sizes and memory addresses refer to each specific device, and "Typical" parameters provided can and do vary in different applications. Application examples described herein are for illustrative purposes only. Silicon Laboratories reserves the right to make changes without further notice and limitation to product information, specifications, and descriptions herein, and does not give warranties as to the accuracy or completeness of the included information. Silicon Laboratories shall have no liability for the consequences of use of the information supplied herein. This document does not imply or express copyright licenses granted hereunder to design or fabricate any integrated circuits. The products must not be used within any Life Support System without the specific written consent of Silicon Laboratories. A "Life Support System" is any product or system intended to support or sustain life and/or health, which, if it fails, can be reasonably expected to result in significant personal injury or death. Silicon Laboratories products are generally not intended for military applications. Silicon Laboratories products shall under no circumstances be used in weapons of mass destruction including (but not limited to) nuclear, biological or chemical weapons, or missiles capable of delivering such weapons.

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