TRIPLE -CHANNEL DIGITAL ISOLATOR
Si8430/31/35
Features
High-speed operation:
DC – 150 Mbps
Low propagation delay:
<10 ns
Wide Operating Supply Voltage:
2.375-5.5V
Low power: I1 + I2 <
12 mA/channel at 100 Mbps
Precise timing:
2 ns pulse width distortion
1 ns channel-channel matching
2 ns pulse width skew
Applications
Isolated switch mode supplies
Isolated ADC, DAC
Safety Regulatory Approvals
UL recognition:2500 V
Minute per UL1577
CSA component acceptance
notice
RMS
for 1
2500 V
Transient Immunity: >25 kV/µs
Tri-state outputs with ENABLE
RMS
isolation
control
DC correct
No start-up initialization required
<10 µs Startup Time
High temperature operation:
125 °C at 100 Mbps
100 °C at 150 Mbps
Wide body SOIC-16 package
Motor control
Power factor correction systems
VDE certification conformity
IEC 60747-5-2
(VDE0884 Part 2)
V
DD1
GND1
A1
A2
A3
NC
EN1/NC
GND1
Pin Assignments
Wide Body SOIC
1
2
3
4
5
6
7
8
Top View
16
15
14
13
12
11
10
9
V
DD2
GND2
B1
B2
B3
NC
EN2/NC
GND2
Description
Silicon Lab's family of digital isolators are CMOS devices that employ
an RF coupler to transmit digital information across an isolation
barrier. Very high speed operation at low power levels is achieved.
These parts are available in a 16-pin wide body SOIC package. Three
speed grade options (1, 10, 150 Mbps) are available and achieve
typical propagation delay of less than 10 ns.
Block Diagram
Si8430/35
A1
A2
A3
NC
B1
B2
B3
Rev. 0.31 5/08 Copyright © 2008 by Silicon Laboratories Si8430/31/35
Si8431
A1
A2
A3
EN1 EN2/NC EN2
B1
B2
B3
Si8430/31/35
2 Rev. 0.31
Si8430/31/35
TABLE OF CONTENTS
Section Page
1. Electrical Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2. Typical Performance Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
3. Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19
3.1. Theory of Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19
3.2. Eye Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19
4. Layout Recommendations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20
4.1. Supply Bypass . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20
4.2. Input and Output Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
4.3. Enable (EN1, EN2) Inputs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22
4.4. RF Radiated Emissions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
4.5. RF Immunity and Common Mode Transient Immunity . . . . . . . . . . . . . . . . . . . . . . . 24
5. Pin Descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
6. Ordering Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
7. Package Outline: Wide Body SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .27
Document Change List . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .28
Contact Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .30
Rev. 0.31 3
Si8430/31/35
1. Electrical Specifications
Table 1. Electrical Characteristics
(V
= 5 V, V
DD1
Parameter Symbol Test Condition Min Typ Max Unit
= 5 V, TA = –40 to 125 ºC)
DD2
High Level Input Voltage V
Low Level Input Voltage V
High Level Output Voltage V
Low Level Output Voltage V
Input Leakage Current I
Enable Input High Current I
Enable Input Low Current I
DC Supply Current (All inputs 0 V or at Supply)
Si8430/35-A,-B,-C, V
Si8430/35-A,-B,-C, V
Si8430/35-A,-B,-C, V
Si8430/35-A,-B,-C, V
Si8431-A,-B,-C, V
Si8431-A,-B,-C, V
Si8431-A,-B,-C, V
Si8431-A,-B,-C, V
DD1
DD2
DD1
DD2
DD1
DD2
DD1
DD2
10 Mbps Supply Current (All inputs = 5 MHz square wave, CI = 15 pF on all outputs)
Si8430/35-B,-C, V
Si8430/35-B,-C, V
Si8431-B,-C, V
Si8431-B,-C, V
DD1
DD2
DD1
DD2
100 Mbps Supply Current (All inputs = 50 MHz square wave, CI = 15 pF on all outputs)
Si8430-C, V
Si8430-C, V
Si8431-C, V
Si8431-C, V
DD1
DD2
DD1
DD2
IH
IL
OH
OL
L
ENH
ENL
2.0 — — V
—— 0 . 8 V
loh = –4 mA V
DD1,VDD2
–0.4 4.8 — V
lol = 4 mA — 0.2 0.4 V
—— ± 1 0 µ A
V
V
ENx
ENx
= V
= V
IH
IL
—4 — µ A
—2 0 — µ A
All inputs 0 DC — 7 10 mA
All inputs 0 DC — 6 9 mA
All inputs 1 DC — 14 18 mA
All inputs 1 DC — 6 9 mA
All inputs 0 DC — 8 12 mA
All inputs 0 DC — 10 15 mA
All inputs 1 DC — 13 19 mA
All inputs 1 DC — 12 17 mA
—1 1 1 5 m A
—1 3 1 7 m A
—1 2 1 6 m A
—1 3 1 7 m A
—1 1 1 5 m A
—2 3 2 8 m A
—1 3 1 8 m A
—2 1 2 6 m A
4 Rev. 0.31
Si8430/31/35
Table 1. Electrical Characteristics (Continued)
(V
= 5 V, V
DD1
Parameter Symbol Test Condition Min Typ Max Unit
Si843x-A
Maximum Data Rate 0 — 1 Mbps
Minimum Pulse Width — — 1000 ns
Propagation Delay t
Pulse Width Distortion
|t
PLH - tPHL
Propagation Delay Skew
Channel-Channel Skew t
Si843x-B
Maximum Data Rate 0 — 10 Mbps
Minimum Pulse Width — — 100 ns
= 5 V, TA = –40 to 125 ºC)
DD2
|
1
Timing Characteristics
PHL
, t
PLH
See Figure 2 — — 75 ns
PWD See Figure 2 — — 30 ns
t
PSK(P-P)
PSK
— — 50 ns
— — 40 ns
Propagation Delay t
Pulse Width Distortion
|t
PLH - tPHL
Propagation Delay Skew
|
1
Channel-Channel Skew t
PHL
, t
PLH
See Figure 2 — — 35 ns
PWD See Figure 2 — — 7.5 ns
t
PSK(P-P)
PSK
— — 25 ns
—— 5 n s
Si843x-C
Maximum Data Rate 0 — 150 Mbps
Minimum Pulse Width — — 6.6 ns
Propagation Delay t
Pulse Width Distortion
|t
PLH - tPHL
Propagation Delay Skew
|
1
Channel-Channel Skew t
PHL
, t
PLH
See Figure 2 4 6.5 9.5 ns
PWD See Figure 2 — — 3 ns
t
PSK(P-P)
PSK
—— 5 . 5 n s
—— 3 n s
Rev. 0.31 5
Si8430/31/35
Table 1. Electrical Characteristics (Continued)
(V
= 5 V, V
DD1
Parameter Symbol Test Condition Min Typ Max Unit
For All Models
Output Rise Time t
Output Fall Time t
Common Mode Transient
Immunity
Enable to Data Valid t
Enable to Data Tri-State t
Start-up Time
Notes:
1. t
PSK(P-P)
same supply voltages, load, and ambient temperature.
2. Start-up time is the time period from the application of power to valid data at the output.
= 5 V, TA = –40 to 125 ºC)
DD2
r
CL = 15 pF
—2 — n s
See Figure 2
f
CL = 15 pF
—2 — n s
See Figure 2
CMTI V
en1
en2
2
is the magnitude of the difference in propagation delay times measured between different units operating at the
t
SU
I=VDD
See Figure 1 — 5 — ns
See Figure 1 — 5 — ns
or 0 V 25 30 — kV/µs
—3 — µ s
ENABLE
OUTPUTS
Typical
Input
Typical
Output
50%
50%
t
en1
Figure 1. ENABLE Timing Diagram
t
PLH
90%
10%
t
r
90%
10%
t
PHL
t
f
t
en2
Figure 2. Propagation Delay Timing
6 Rev. 0.31
Si8430/31/35
Table 2. Electrical Characteristics
(V
= 3.3 V, V
DD1
Parameter Symbol Test Condition Min Typ Max Unit
= 3.3 V, TA = –40 to 125 ºC)
DD2
High Level Input Voltage V
Low Level Input Voltage V
High Level Output Voltage V
Low Level Output Voltage V
Input Leakage Current I
Enable Input High Current I
Enable Input Low Current I
DC Supply Current (All inputs 0 V or at supply)
Si8430/35-A,-B,-C, V
Si8430/35-A,-B,-C, V
Si8430/35-A,-B,-C, V
Si8430/35-A,-B,-C, V
Si8431-A,-B,-C, V
Si8431-A,-B,-C, V
Si8431-A,-B,-C, V
Si8431-A,-B,-C, V
DD1
DD2
DD1
DD2
DD1
DD2
DD1
DD2
10 Mbps Supply Current (All inputs = 5 MHz square wave, CI = 15 pF on all outputs)
IH
IL
OH
OL
L
ENH
ENL
2.0 — — V
—— 0 . 8 V
loh = –4 mA V
DD1,VDD2
–0.4 3.1 — V
lol = 4 mA — 0.2 0.4 V
—— ± 1 0 µ A
V
V
ENx
ENx
= V
= V
IH
IL
—4 — µ A
—2 0 — µ A
All inputs 0 DC — 7 10 mA
All inputs 0 DC — 6 9 mA
All inputs 1 DC — 13 17 mA
All inputs 1 DC — 5 8 mA
All inputs 0 DC — 7 11 mA
All inputs 0 DC — 10 15 mA
All inputs 1 DC — 12 18 mA
All inputs 1 DC — 11 16 mA
Si8430/35-B,-C, V
Si8430/35-B,-C, V
Si8431-B,-C, V
Si8431-B,-C, V
DD1
DD2
100 Mbps Supply Current (All inputs = 50 MHz square wave, CI = 15 pF on all outputs)
Si8430-C, V
Si8430-C, V
Si8431-C, V
Si8431-C, V
DD1
DD2
DD1
DD2
DD1
DD2
—1 0 1 4 m A
—1 1 1 6 m A
—1 0 1 5 m A
—1 3 1 8 m A
—1 1 1 5 m A
—1 6 2 0 m A
—1 2 1 8 m A
—1 9 2 5 m A
Rev. 0.31 7
Si8430/31/35
Table 2. Electrical Characteristics (Continued)
(V
= 3.3 V, V
DD1
Parameter Symbol Test Condition Min Typ Max Unit
Si843x-A
Maximum Data Rate 0 — 1 Mbps
Minimum Pulse Width — — 1000 ns
= 3.3 V, TA = –40 to 125 ºC)
DD2
Timing Characteristics
Propagation Delay t
Pulse Width Distortion
|t
PLH - tPHL
Propagation Delay Skew
|
1
Channel-Channel Skew t
PHL
, t
PLH
See Figure 2 — — 75 ns
PWD See Figure 2 — — 30 ns
t
PSK(P-P)
PSK
— — 50 ns
— — 40 ns
Si843x-B
Maximum Data Rate 0 — 10 Mbps
Minimum Pulse Width — — 100 ns
Propagation Delay t
Pulse Width Distortion
|t
PLH - tPHL
Propagation Delay Skew
|
1
Channel-Channel Skew t
PHL
, t
PLH
See Figure 2 — — 35 ns
PWD See Figure 2 — — 7.5 ns
t
PSK(P-P)
PSK
— — 25 ns
—— 5 n s
Si843x-C
Maximum Data Rate 0 — 150 Mbps
Minimum Pulse Width — — 6.6 ns
Propagation Delay t
Pulse Width Distortion
|t
PLH - tPHL
Propagation Delay Skew
|
1
Channel-Channel Skew t
PHL
, t
PLH
See Figure 2 4 6.5 9.5 ns
PWD See Figure 2 — — 3 ns
t
PSK(P-P)
PSK
—— 5 . 5 n s
—— 3 n s
8 Rev. 0.31
Si8430/31/35
Table 2. Electrical Characteristics (Continued)
(V
= 3.3 V, V
DD1
Parameter Symbol Test Condition Min Typ Max Unit
For All Models
= 3.3 V, TA = –40 to 125 ºC)
DD2
Output Rise Time t
r
CL = 15 pF
—2 — n s
See Figure 2
Output Fall Time t
f
CL = 15 pF
—2 — n s
See Figure 2
Common Mode Transient
CMTI V
I=VDD
or 0 V 25 30 — kV/µs
Immunity
Enable to Data Valid t
Enable to Data Tri-State t
PSK(P-P)
2
is the magnitude of the difference in propagation delay times measured between different units operating at
Start-up Time
Notes:
1. t
the same supply voltages, load, and ambient temperature.
2. Start-up time is the time period from the application of power to valid data at the output.
en1
en2
t
SU
See Figure 1 — 5 — ns
See Figure 1 — 5 — ns
—3 — µ s
Rev. 0.31 9