Silicon Laboratories BGX13P Bluetooth User Manual

BGX13P Bluetooth ® Xpress Module Data
Sheet

The BGX13P Bluetooth ® Xpress Module family of serial replacement modules elimi­nates Bluetooth firmware development complexity with a serial interface that can operate
as a raw data stream or control the device through a abstracted command API. The
BGX13P can facilitate a device-to-device cable replacement link or communicate with
mobile devices through the Xpress Bluetooth mobile library. The device integrates a
Bluetooth 5 compliant stack to future-proof applications as Bluetooth 5 adoption increa­ses.

The device is targeted for applications where ultra-small size, reliable high-performance
RF, low-power consumption, and fast time-to-market are key requirements. At 12.9 ×

15.0 × 2.0 mm (W × L × H) the BGX13P module fits applications where size is a con­straint. BGX13P also integrates a high-performance, ultra-robust antenna, which re­quires minimal PCB, plastic, and metal clearance. The total PCB area required by

BGX13P is only 51 mm2. The BGX13P has Bluetooth, CE, full FCC, Japanese and
South Korean certifications.

BGX13P modules can be used in a wide variety of applications:

• Health, sports, and wellness devices

• Industrial, home, and building automation

• Smart phone, tablet, and PC accessories

Serial interface

controller

KEY FEATURES

• Bluetooth 5 low energy compliant

• Serial interface with hardware flow control

• GPIO control through command API

• Integrated antenna

• TX power up to 8 dBm

• Encrypted bonding and connectivity

• Integrated DC-DC Converter

• Onboard Bluetooth stack

• Centralized OTA through mobile app
library

RadioBluetooth

RX/TX and flow

Command

parser

control

Raw data

Bluetooth 5

compliant

stack

Timers

Radio

transceiver

Chip

antenna

stream
buffers

GPIO

OTA

control

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Matching

network

1. Ordering Information

BGX13P Bluetooth ® Xpress Module Data Sheet

Ordering Information

Table 1.1. Ordering Information

Bluetooth

Protocol

Ordering Code

BGX13P22GA-V31R Bluetooth Low

BGX13P22GA-V31 Bluetooth Low

BGX13P22GA-V21R Bluetooth Low

BGX13P22GA-V21 Bluetooth Low

The maximum TX power allowed by different regional certification authorities may differ from the maximum TX power the module can
produce. End-product manufacturers must verify that the module is configured to meet regulatory limits for each region in accordance
with the formal certification test reports.

Stack

Energy

Energy

Energy

Energy

Xpress firm­ware version

1.2.2045.0 2.4 GHz @ 8 dBm Built-in 8 Reel

1.2.2045.0 2.4 GHz @ 8 dBm Built-in 8 Tray

1.0.927.2 2.4 GHz @ 8 dBm Built-in 8 Reel

1.0.927.2 2.4 GHz @ 8 dBm Built-in 8 Tray

Frequency Band

@ Max TX Power Antenna GPIO Packaging

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Table of Contents

1. Ordering Information ............................2

2. Electrical Specifications ...........................5

2.1 Electrical Characteristics ..........................5

2.1.1 Absolute Maximum Ratings ........................5

2.1.2 Operating Conditions ..........................5

2.1.3 Power Consumption...........................6

2.1.4 2.4 GHz RF Transceiver Characteristics ....................7

2.1.5 Non-Volatile Configuration Storage......................8

2.1.6 General-Purpose I/O (GPIO) ........................9

3. Typical Connection Diagrams ........................10

3.1 Typical BGX13P Connections .........................10

4. Layout Guidelines ............................11

4.1 Module Placement and Application PCB Layout Guidelines ...............11

4.2 Effect of Plastic and Metal Materials .......................12

4.3 Locating the Module Close to Human Body ....................12

4.4 2D Radiation Pattern Plots ..........................13

5. Hardware Design Guidelines ........................15

5.1 Power Supply Requirements .........................15

5.2 Reset Functions .............................15

5.3 Debug and Firmware Updates .........................15

6. Pin Definitions ..............................16

6.1 BGX13P Device Pinout ...........................16

7. Functional overview ............................18

7.1 Introduction ...............................18

7.2 Communication Use Cases..........................18

7.3 Embedded Interface ............................18

7.4 Command Mode and Streaming Mode ......................18

7.5 Command API ..............................19

7.6 GPIO Control ..............................19

7.7 Device Configuration ............................19

7.8 Security Features .............................19

7.9 OTA .................................19

7.10 Direct Test Mode Support ..........................19

8. Package Specifications ..........................20

8.1 Package Outline .............................20

8.2 Recommended PCB Land Pattern .......................21

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8.3 Package Marking .............................22

9. Soldering Recommendations ........................23

9.1 Soldering Recommendations .........................23

10. Certifications ..............................24

10.1 Bluetooth ...............................24

10.2 CE .................................24

10.3 FCC .................................24

10.4 ISED Canada ..............................25

10.5 Japan ................................27

10.6 KC South Korea .............................27

10.7 NCC Taiwan ..............................28

11. Revision History............................. 29

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BGX13P

Bluetooth ® Xpress Module Data Sheet

Electrical Specifications

2. Electrical Specifications

2.1 Electrical Characteristics

All electrical parameters in all tables are specified under the following conditions, unless stated otherwise:

• Typical values are based on T

• Radio performance numbers are measured in conducted mode, based on Silicon Laboratories reference designs using output pow­er-specific external RF impedance-matching networks for interfacing to a 50 Ω antenna.

• Minimum and maximum values represent the worst conditions across supply voltage, process variation, and operating temperature,
unless stated otherwise.

The BGX13P module has only one external supply pin (VDD). There are several internal supply rails mentioned in the electrical specifi­cations, whose connections vary based on transmit power configuration. Refer to for the relationship between the module's external
VDD pin and internal voltage supply rails.

Refer to for more details about operational supply and temperature limits.

2.1.1 Absolute Maximum Ratings

Stresses above those listed below may cause permanent damage to the device. This is a stress rating only, and functional operation of
the devices at those or any other conditions above those indicated in the operation listings of this specification is not implied. Exposure
to maximum rating conditions for extended periods may affect device reliability. For more information on the available quality and relia­bility data, see the Quality and Reliability Monitor Report at http://www.silabs.com/support/quality/pages/default.aspx.

= 25°C and VDD = 3.3 V, by production test and/or technology characterization.

AMB

Table 2.1. Absolute Maximum Ratings

Parameter Symbol Test Condition Min Typ Max Unit

Storage temperature range T

Voltage on any supply pin V

Voltage ramp rate on any

STG

DDMAX

V

DDRAMPMAX

-40 — 85 °C

-0.3 — 3.8 V

— — 1 V / µs

supply pin

DC voltage on any GPIO pin V

Maximum RF level at input P

Total current into supply pins I

Total current into VSS

DIGPIN

RFMAX2G4

VDDMAX

I

VSSMAX

Source — — 200 mA

Sink — — 200 mA

-0.3 — VDD+0.3 V

— — 10 dBm

ground lines

Current per I/O pin I

IOMAX

Sink — — 50 mA

Source — — 50 mA

Current for all I/O pins I

IOALLMAX

Sink — — 200 mA

Source — — 200 mA

Junction temperature T

J

-40 — 105 °C

2.1.2 Operating Conditions

The following subsections define the operating conditions for the module.

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BGX13P Bluetooth ® Xpress Module Data Sheet

Electrical Specifications

2.1.2.1 General Operating Conditions

Table 2.2. General Operating Conditions

Parameter Symbol Test Condition Min Typ Max Unit

Operating ambient tempera-

T

A

-40 25 85 °C

ture range

VDD operating supply volt-

V

VDD

2.4 3.3 3.8 V

age

2.1.3 Power Consumption

Unless otherwise indicated, typical conditions are: VDD = 3.3 V. T = 25 °C. Minimum and maximum values in this table represent the
worst conditions across process variation at T = 25 °C.

Table 2.3. Power Consumption

Parameter Symbol Test Condition Min Typ Max Unit

Active supply current, Un­connected, Idle

Active supply current, Adver­tising

I

ACTIVE_IDLE

I

ACTIVE_ADV

Baud rate ≤ 9600 bps — 3 — µA

Baud rate > 9600 bps — 3.25 — mA

Interval = 546.25 ms, Baud rate ≤

— 90 — µA

9600 bps

Interval = 20 ms, Baud rate ≤

— 2 — mA

9600 bps

Interval = 546.25 ms, Baud rate >

— 3.3 — mA

9600 bps

Active supply current, Con­nected, 15 ms Interval

Supply current in low power
mode

I

ACTIVE_CONN

I

LPM

Interval = 20 ms, Baud rate >

— 4.7 — mA

9600 bps

Idle, Baud Rate ≤ 9600 bps — 660 — µA

TX/RX (acknowledged) at highest

— 3.5 — mA
throughput, Baud Rate ≤ 9600
bps

TX/RX (unacknowledged) at high-

— 4 — mA
est throughput, Baud Rate ≤ 9600
bps

Idle, Baud Rate > 9600 bps — 3.5 — mA

TX/RX (acknowledged) at highest

— 5.25 — mA
throughput, Baud Rate > 9600
bps

TX/RX (unacknowledged) at high-

— 7 — mA
est throughput, Baud Rate > 9600
bps

Radio disabled — 3 — µA

Radio enabled, Advertising, Inter-

— 90 — µA
val = 546.25 ms

Radio enabled, Advertising, Inter-

— 2 — mA
val = 20 ms

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BGX13P Bluetooth ® Xpress Module Data Sheet

Electrical Specifications

2.1.4 2.4 GHz RF Transceiver Characteristics

2.1.4.1 RF Transmitter General Characteristics for 2.4 GHz Band

Unless otherwise indicated, typical conditions are: T = 25 °C, VDD = 3.3 V. DC-DC on. Crystal frequency = 38.4 MHz. RF center fre­quency 2.45 GHz. Conducted measurement from the antenna feedpoint.

Table 2.4. RF Transmitter General Characteristics for 2.4 GHz Band

Parameter Symbol Test Condition Min Typ Max Unit

Maximum TX power

1

POUT

MAX

— 8 — dBm

Minimum active TX Power POUT

Output power step size POUT

Output power variation vs
supply at POUT

MAX

Output power variation vs
temperature at POUT

MAX

Output power variation vs RF
frequency at POUT

MAX

RF tuning frequency range F

POUT

POUT

POUT

RANGE

MIN

STEP

VAR_V

VAR_T

VAR_F

CW -27 — dBm

-5 dBm< Output power < 0 dBm — 0.5 — dB

0 dBm < output power <
POUT

MAX

2.4 V < V

< 3.3 V — 0.05 — dB

VDD

— 0.5 — dB

From -40 to +85 °C — 1.7 — dB

Over RF tuning frequency range — 0.3 — dB

2400 — 2483.5 MHz

Note:

1. Supported transmit power levels are determined by the ordering part number (OPN). Transmit power ratings for all devices cov­ered in this datasheet can be found in the Max TX Power column of the Ordering Information Table.

2.1.4.2 RF Receiver General Characteristics for 2.4 GHz Band

Unless otherwise indicated, typical conditions are: T = 25 °C, VDD = 3.3 V. DC-DC on. Crystal frequency = 38.4 MHz. RF center fre­quency 2.45 GHz. Conducted measurement from the antenna feedpoint.

Table 2.5. RF Receiver General Characteristics for 2.4 GHz Band

Parameter Symbol Test Condition Min Typ Max Unit

RF tuning frequency range F

Receive mode maximum
spurious emission

Max spurious emissions dur­ing active receive mode, per
FCC Part 15.109(a)

RANGE

SPUR

SPUR

RX

RX_FCC

30 MHz to 1 GHz — -57 — dBm

1 GHz to 12 GHz — -47 — dBm

216 MHz to 960 MHz, Conducted
Measurement

Above 960 MHz, Conducted

2400 — 2483.5 MHz

— -55.2 — dBm

— -47.2 — dBm

Measurement

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BGX13P Bluetooth ® Xpress Module Data Sheet

Electrical Specifications

2.1.4.3 RF Receiver Characteristics for Bluetooth Low Energy in the 2.4GHz Band, 1 Mbps Data Rate

Unless otherwise indicated, typical conditions are: T = 25 °C, VDD = 3.3 V. DC-DC on. Crystal frequency = 38.4 MHz. RF center fre­quency 2.45 GHz. Conducted measurement from the antenna feedpoint.

Table 2.6. RF Receiver Characteristics for Bluetooth Low Energy in the 2.4GHz Band, 1 Mbps Data Rate

Parameter Symbol Test Condition Min Typ Max Unit

Sensitivity, 0.1% BER SENS

Signal is reference signal1. Using

— -94.8 — dBm

DC-DC converter.

With non-ideal signals as speci-

— -94.4 — dBm

fied in RF-PHY.TS.4.2.2, section

4.6.1.

Note:

1. Reference signal is defined 2GFSK at -67 dBm, Modulation index = 0.5, BT = 0.5, Bit rate = 1 Mbps, desired data = PRBS9;
interferer data = PRBS15; frequency accuracy better than 1 ppm.

2.1.4.4 RF Receiver Characteristics for Bluetooth Low Energy in the 2.4GHz Band, 2 Mbps Data Rate

Unless otherwise indicated, typical conditions are: T = 25 °C, VDD = 3.3 V. DC-DC on. Crystal frequency = 38.4 MHz. RF center fre­quency 2.45 GHz. Conducted measurement from the antenna feedpoint.

Table 2.7. RF Receiver Characteristics for Bluetooth Low Energy in the 2.4GHz Band, 2 Mbps Data Rate

Parameter Symbol Test Condition Min Typ Max Unit

Sensitivity, 0.1% BER SENS

Signal is reference signal1. Using

— -91.2 — dBm

DC-DC converter.

With non-ideal signals as speci-

— -91.1 — dBm

fied in RF-PHY.TS.4.2.2, section

4.6.1.

Note:

1. Reference signal is defined 2GFSK at -67 dBm, Modulation index = 0.5, BT = 0.5, Bit rate = 2 Mbps, desired data = PRBS9;
interferer data = PRBS15; frequency accuracy better than 1 ppm.

2.1.5 Non-Volatile Configuration Storage

Table 2.8. Non-Volatile Configuration Storage

Parameter Symbol Test Condition Min Typ Max Unit

Update cycles before failure UC 10000 — — cycles

Data retention RET 10 — — years

Supply voltage during update V

DD

2.4 — 3.6 V

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BGX13P Bluetooth ® Xpress Module Data Sheet

Electrical Specifications

2.1.6 General-Purpose I/O (GPIO)

Table 2.9. General-Purpose I/O (GPIO)

Parameter Symbol Test Condition Min Typ Max Unit

Input low voltage V

Input high voltage V

Output high voltage relative
to VDD

Output low voltage relative to
VDD

IL

IH

V

OH

GPIO pins — — VDD*0.3 V

GPIO pins VDD*0.7 — — V

Sourcing 3 mA, VDD ≥ 3 V,

VDD*0.8 — — V

Drive Strength = Weak

Sourcing 1.2 mA, VDD ≥ 1.62 V,

VDD*0.6 — — V

Drive Strength = Weak

Sourcing 20 mA, VDD ≥ 3 V,

VDD*0.8 — — V

Drive Strength = Strong

Sourcing 8 mA, VDD ≥ 1.62 V,

VDD*0.6 — — V

Drive Strength = Strong

V

OL

Sinking 3 mA, VDD ≥ 3 V,

— — VDD*0.2 V

Drive Strength = Weak

Sinking 1.2 mA, VDD ≥ 1.62 V,

— — VDD*0.4 V

Drive Strength = Weak

Sinking 20 mA, VDD ≥ 3 V,

— — VDD*0.2 V

Drive Strength = Strong

Input leakage current I

I/O pin pull-up/pull-down re­sistor

Pulse width of pulses re­moved by the glitch suppres­sion filter

Output fall time, From 70%
to 30% of V

DD

Output rise time, From 30%
to 70% of V

DD

IOLEAK

R

PUD

t

IOGLITCH

t

IOOF

t

IOOR

Sinking 8 mA, VDD ≥ 1.62 V,

— — VDD*0.4 V

Drive Strength = Strong

All GPIO pins, GPIO ≤ VDD — 0.1 30 nA

30 40 65 kΩ

15 25 45 ns

CL = 50 pF,

— 1.8 — ns

Drive Strength = Strong

CL = 50 pF,

— 4.5 — ns

Drive Strength = Weak

CL = 50 pF,

— 2.2 — ns

Drive Strength = Strong

CL = 50 pF,

— 7.4 — ns

Drive Strength = Weak

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