Silan SU0524A6GTR, SU0524B6GTR, SU0524LTR Schematic [ru]

SU0524_Datasheet
4-CHANNEL LOW CAPACITANCE ESD PROTECTION DIODES ARRAY

DESCRIPTIONS

The SU0524 is a 4-channel ultra low capacitance rail clamp
ESD protection diodes array. Each channel consists of a pair of
the positive or negative rail. A zener diode is integrated in to the
array between the positive and negative supply rails.
In the typical applications, the negative rail pin (assigned as
GND) is connected with system ground. The Positive ESD
current is steered to the ground through an ESD diode and
Zener diode and the positive ESD voltage is clamped to the
zener voltage.
The SU0524 is idea to protect high speed data lines. Three
package type is provided for easy PCB layout.

FEATURES

* 4 channels of ESD protection;
* Provides ESD protection to IEC61000-4-2 level 4
- ±17kV air discharge
- ±12kV contact discharge;
* Channel I/O to GND capacitance: 0.9pF(Max)
* Channel I/O to I/O capacitance: 0.45pF(Max)
* Low clamping voltage;
* 5V low operating voltage;
* Improved zener structure;
* Optimized package for easy high speed data lines PCB
layout;
* RoHS compliant.

APPLICATIONS

* HDMI / DVI ports;
* Display Port interface;
* 10M / 100M / 1G Ethernet;
* USB 2.0 interface;
* VGA interface
* Set-top box;
* Flat panel Monitors / TVs;
* PC / Note book

ORDERING INFORMATION

Part No. Package Marking Material Packing
SU0524A6GTR SOT-23-6L C96 Halogen free Tape&Reel
SU0524B6GTR SOT-363-6L C07 Halogen free Tape&Reel
SU0524LTR MSOP-10-0.5 SU0524L Pb free Tape&Reel
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn Page 1 of 9
REV:1.4 2011.10.19
SU0524_Datasheet

PIN CONFIGURATION

ABSOLUTE MAXIMUM RATINGS

Characteristics Symbol Ratings Unit
Peak Pulse Power(8/20μs) P 150 W
Peak Pulse Current(8/20μs) I 5 A
ESD per IEC 61000-4-2(Air) V ±17 kV
ESD per IEC 61000-4-2(Contact) V ±12 kV
Operating Temperature Range T
Storage Temperature Range T
PP
PP
ESD1
ESD2
-55 ~ +125 °C
opr
-55 ~ +150 °C
stg
ELECTRICAL CHARACTERISTICS(Tamb=25°C)
Characteristics Symbol Test Conditions Min. Typ. Max. Unit
Reverse Working
Voltage
Reverse Breakdown
Voltage
Reverse Leakage
Current
Positive Clamping
Voltage
Negative Clamping
Voltage
Junction Capacitance
Between Channel
Junction Capacitance
Between I/O And GND
V
RWM
V 6 -- -- V
BR
I -- -- 1 μA
R
V
C1
V
C2
C -- 0.35 0.45 pF
J1
C -- -- 0.9 pF
J2
Any I/O pin to GND -- -- 5 V
It =1mA;
Any I/O pin to GND
V =5V, T=25°C;
RWM
Any I/O pin to GND
I
=1A, t =8/20Μs;
PP
P
Positive pulse; -- 8.5 12.0 V
Any I/O pin to GND
I
=1A, t =8/20μS;
PP
P
Negative pulse; -- 1.8 -- V
Any I/O pin to GND
VR=0V, f=1MHz;
Between I/O pins
VR=0V, f=1MHz;
Any I/O pin to GND
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
REV:1.4 2011.10.19
Http://www.silan.com.cn Page 2 of 9

TYPICAL ELECTRICAL CHARACTERISTICS CURVE

SU0524_Datasheet
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn Page 3 of 9
REV:1.4 2011.10.19
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