SILAN SC16312 Datasheet

Silan Semiconductors



1/4 to 1/11 DUTY FIP(VFD) CONTROLLER/DRIVER

DESCRIPTION

The SC16312 is a FIP (Fluorescent Indicator Panel, or Vacuum Fluorescent Display) controller/driver that is driven on a 1/4 or 1/11 duty factor. It consists of 11 segment output lines, 6 grid output lines, 5 segment/grid output drive lines, a displaymemory, a control circuit, and a key scan circuit. Serial data is input to the SC16312 through a three-line serial interface. This FIP controller/driver is ideal as a peripheral device for a single-chip microcomputer.

FEATURES

* Multiple display modes (11-segment & 11-dight

to 16-segment & 4-digit). * Key scanning (6x4 matrix). * Dimming circuit (eight steps). * High-voltage output (V * LED ports (4 chs., 20 mA max). * General-purpose input port (4 bits)

PAD CONFIGURATION

– 35V max).

DD

SW SW SW

SW

D

OUT

D

IN

V

SS

CLK STB

KEY KEY

4

3

2

1

LED

VSSOSC

44 43 42 41 40 39 38 37 36 35 34

1

2

3

4

4 5 6 7 8 9

10

1

2

11

12 13 14 15 16 17 18 19 20 21 22

4

KEY3KEY

DD

V

SC16312

1

2

KS

/

2/

1

Seg

3

KS

3/

Seg

4

KS

4/

Seg

5

KS

5/

Seg

SC16312

* No external resistors necessary for driver

outputs (P-ch open-drain + pull-down resistor output)

* Serial interface (CLK, STB, D

Grid4Grid3Grid2Grid1VDDLED

33

Grid

5

32

Grid

6

31

Seg16/Grid

30

Seg15/Grid

29

Seg14/Grid

28

Seg

13/

27

V

EE

Seg

12/

26 25

Seg

11

Seg

10

24 23

Seg

9

6

8

KS

Seg7Seg

6/

Seg



QPF-44-10x10-0.8

7

8

9

Grid

10

Grid

11

IN,DOUT

)

HANGZHOU SILAN MICROELECTRONICS JOINT-STOCK CO.,LTD

Rev: 1.0 2000.12.31

1



Silan Semiconductors



BLOCK DIAGRAM



SC16312

Command decoder

6

D

IN

5

D

OUT

CLK

STB

V

DD

Key

1

to Key

4

SW

1

to

4

SW

Serial I/F

8

9

R

44

OSC

4

4-bit latch

4

Display memeoy

16 bits x 11 words

Timing generator

key scan

key data memory(4 x 6)

4-bit latch

42 39 14 7 27

LED

1

Key datamemory(4 x 6)

4

Dimming

16-bit

output

latch

11-bit

shift

register

circuit

5

11 6

V

DD

(+5V)

selector

V

SS

(0V)

1116

Data

V

EE

(-30V)

segm-

ent

driver

Multip

lexed driver

5

Grid

driver

ABSOLUTE MAXIMUM RATING

(Ta=25°C, Vss=0V)

Characteristic Symbol Value Unit

Logic Supply Voltage V Driver Supply Voltage V Logic Input Voltage V FIP Driver Output Voltage V LED Driver Output Current I FIP Driver Output Current I PowerDissipation P Storage temperature T Operating Ambient Temperature T

DD

EE

I1

O2 O1 O2

D STG OPT

* Note: Derate at –6.4 mW/°C at Ta=25°C or higher

-0.5 ~ 7.0 V

V

0.5 ~ VDD-40 V

DD +

-0.5~VDD+0.5 V

VEE-0.5~VDD+0.5 V

+25 mA

-40 (grid) ; -15 (segment) mA

*

800

-65 ~ +150

-40~+85

15

Seg

1

25

Seg

11

Seg

12

/

Grid

Seg

Grid

11

16

/

Grid

7

6

26

31

27

32

mW

°C °C

HANGZHOU SILAN MICROELECTRONICS JOINT-STOCK CO.,LTD

Rev: 1.0 2000.12.31

2



Silan Semiconductors



RECOMMENDED OPERATING RANGE

Parameter Symbol Min Typ Max Unit

Logic Supply Voltage V High-Level Input Voltage V Low-Level Input Voltage V Driver Supply Voltage V

Maximum power consumption P

Where segment current = 3mA, grid current = 15mA, and LED current = 20mA, FIP driver dissipation = number of segments x 6 + number of grids/(number of grids + 1) x 30(mW)

R

dissipation = (VDD-VEE)2/50 x (number of segments + 1)(mW)

L

LED driver dissipation = number of LEDs x 20(mW) Dynamic power consumption = V

Example Where V

= -25V, VDD= 5V, and in 16-segment and 6-digit modes,

EE

FIP driver dissipation = 16 x 6 +6/7 x 30 = 122 R

dissipation = 302/50 x 17 = 306

L

LED driver dissipation = 4 x 20 = 80 Dynamic power consumption = 5 x 5 = 25

= FIP driver dissipation + RLdissipation + LED driver dissipation + dynamic

MAX.

power consumption

x5(mW)

DD

Total 553 Mw

(Ta=-20 ~ 70 °C, Vss=0V)

DD

IH

IL

EE

4.555.5V

0.7x V

DD

0--0.3xVDDV 0--V

SC16312

-- V

DD

-35 V

DD

V

ELECTRICAL CHARACTERISTICS

Parameter Symbol Test conditions Min Typ Max Unit

High-Level Output Voltage V Low -Level Output Voltage V Low -Level Output Voltage V High-Level Output Current I

High-Level Output Current I

Driver Leakage Current I Output Pull-Down Resistor R Input Current I High-Level Input Voltage V Low-Level Input Voltage V Hysteresis voltage V Dynamic Current Consumption I

OH1 OL1 OL2

OH21

OH22

OLEAKVO=VDD

L I IH IL

H

DDdyn

HANGZHOU SILAN MICROELECTRONICS JOINT-STOCK CO.,LTD

(Ta=-20 ~ 70 °C, V

LED1-LED4,I LED1-LED4,I D

I

,

OUT

OL2

V

VDD-2V, Seg1to Seg

=

O

V

VDD-2V, Grid1to Grid

=

O

DD

OH1= OL1 =20

=4mA -- -- 0.4 V

Seg12/Grid11to Seg16/Grid

=4.5 ~ 5.5V, VEE=-30V)

-1mA 0.9V

DD

mA -- -- 1 V

-3 -- -- mA

11

6

-15 -- -- mA

7



-- -- V

-35V,driver off -- -- -10 Driver output 50 100 150 VI=V

V

or

DD

SS

-- 0.7V

-- --

DD

±1 µA

-- -- V

-- -- -- 0.3V CLK, DIN, STB -- 0.35 -- V Under no load, display off -- -- 5 mA

Rev: 1.0 2000.12.31

3

µA kΩ

V

DD



Silan Semiconductors



SWITCHING CHARACTERISTICS

Parameter Symbol Test conditions Min Typ Max Unit

Oscillation Frequency t

Propagation Delay Time

Rise Time

Fall Time t Maximum Clock Frequency f Input Capacitance C

SWITCHING CHARACTERISTIC WAVEFORMS

f

OSC

50%



(Ta=-20 ~ 70 °C, V

OSC

t

PLZ

t

PZL

t

TZH1

t

TZH2

THZ

max.

I

R=51Ω CLKD

OUT

CL=15pF, RL=10kΩ

CL=300pF

CL=300pF, Segn,Grid Duty=50% 1 -- -- MHz

-- -- -- 15 pF

=4.5 ~ 5.5V, VEE=-30V)

DD

Seg1to Seg Grid

Seg to Seg16/Grid

to Grid6,

1

/Grid

12

n

11

7

SC16312

350 500 650 kHz

-- -- 300 ns

-- -- 100 ns

-- -- 2

-- -- 0.5

-- -- 120

PW

STB

µs

STB

PW

CLK

PW

CLK

D

Sn/G

IN

OUT

CLK

t

SETUP

n

90%

10%

t

HOLD

t

THZ

t

PZL

t

CLK-STB

t

PZL

t

THZ

HANGZHOU SILAN MICROELECTRONICS JOINT-STOCK CO.,LTD

Rev: 1.0 2000.12.31

4



SILAN SC16312 Datasheet

Specifications and Main Features

Frequently Asked Questions

User Manual