SIGE SE1050W Datasheet

R f

Ω

SE1050W

LightCharger™ 10 Gb/s Transimpedance Amplifier

Applications

§ SONET/SDH-based transmission systems, test
equipment and modules

§ OC-192 fibre optic modules and line termination

§ 10 Gigabit Ethernet

§ Fibre Channel

§ Serial data systems up to 10.7 Gb/s

Features

§ Single +5 V power supply

§ Power dissipation = 430 mW (typ)

§ Input noise current = 1.4 µA rms when used with

a 0.2 pF detector

§ Transimpedance gain = 1.2 kΩ into a 50 Ω load
(differential)

§ Input current overload = 2.3 mA pk (+1.1 dBm for

0.9 A/W responsivity - meets 10 Gigabit Ethernet
specification)

§ Wide linear dynamic range of 17 dB (typ)

§ 50 Ω single-ended or 100 Ω differential wire bond

selectable outputs

§ Bandwidth (-3 dB) = 9.8 GHz

§ Operates at OC-192 / STM -64 up to 10.7 Gb/s

NRZ rates

§ Power supply rejection for both single ended and
differential modes of operation

§ Optimized for PIN photodetectors

§ Minimal external components, supply decoupling

only

§ Operating junction temperature range = -40°C to

+100°C

§ Equivalent to Nortel Networks AE99

Final

Product Description

SiGe Semiconductor offers a portfolio of optical
networking ICs for use in high-performance optical
transmitter and receiver functions, from 155 Mb/s up
to 12.5 Gb/s.

SiGe Semiconductor’s SE1050W is a fully integrated
silicon bipolar transimpedance amplifier, providing
wideband, low noise preamplication of signal current
from a PIN photodetector. It features differential
outputs. A decoupling capacitor on the supply is the
only external component required. A system block
diagram is shown after the functional description, on
page 3.

Noise performance is optimized for 10 Gb/s operation,
with a calculated rms noise based sensitivity of
–20 dBm for 10

0.20 pF capacitance and a responsivity of 0.9 A/W,
with an infinite extinction ratio source.

-10

bit error rate, using a detector with

Ordering Information

Type Package Remark

SE1050W Bare Die Shipped in

Waffle Pack

Functional Block Diagram

VCC or +ve supply

Input

Current

TZ_IN

1.29 V

Bandgap
Reference

Power
Supply
Rejection

Tz Amp

Wire bond option for single -ended operation

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Output
Driver

SE1050
TzAmp
10 Gb/s

50 Ω

50 Ω

50

OUTP

OUTN

ACGND

Bondpad Diagram

SE1050W

LightCharger™ 10 Gb/s Transimpedance Amplifier

Final

GND GND ACGND

TZ_IN

2

3

1

1

13

Top

View

7

GND

VCC2 GND VCC1 VCC1 GND

Bondpad Description

Pad No. Name Description

1 GND Negative supply (0V).

OUTP

12

OUTN

11

9 8 6 5 4

10

VCC2

2 GND Negative supply (0V).
3 TZ_IN Input pad (connect to photodetector anode).
4 GND Negative supply (0V).
5 GND Negative supply (0V).
6 GND Negative supply (0V).
7 VCC1 Positive supply (+5 V).
8 VCC1 Positive supply (+5 V).

9 VCC2

10 VCC2
11 OUTN Negative differential voltage output; leave unconnected for single-ended operation.

12 OUTP Positive differential or single-ended voltage output.
13 ACGND

Positive supply (+5 V) – Note: This is a separate supply for the output driver stage
only.

Positive supply (+5 V) – Note: This is a separate supply for the output driver stage
only.

Bond option: Connected to external capacitor to ground for single-ended operation
(recommended 1 nF); unconnected for differential operation.

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SE1050W

LightCharger™ 10 Gb/s Transimpedance Amplifier

Functional Description
Amplifier Front-End

The transimpedance front-end amplifies the current
from a PIN photodetector, anode connected to pad
TZ_IN, to produce a differential output voltage with
the feedback resistor Rf determining the level of
amplification (see the functional block diagram on
page 1).

The input pad TZ_IN is biased at nominally 1.29 V
above ground, allowing the photodetector to have a
wide reverse-bias by connecting the cathode to VCC.
This enables single rail operation and normally
ensures that the PIN operates in its constant, low­capacitance region.

The output stage has its own supply connection
VCC2 (+5 V) to maintain integrity of the high-speed
signal path. The output stage shares the GND (0 V)
connection with the remainder of the circuitry, which
has a separate supply connection VCC1 (+5 V).

Output Driver Stage

The output driver acts as a buffer stage, capable of
swinging up to 1.1 V pk-pk differential into a 100 Ω
load.

System Block Diagram

Final

The output can be configured in a differential or
single-ended mode. For differential opera tion, the pad
ACGND is not wire bonded and the circuit provides a
fully balanced 100 Ω output, on the pins OUTP and
OUTN. For single-ended operation, the ACGND pad
is required to be wire bonded to an external capacitor
to ground (recommend 1 nF). Under these
circumstances, OUTP operates as a single-ended
50 Ω output. In both cases, increasing optical input
level gives a positive-going output signal on the
OUTP pin.

Power Supply Rejection

An on-chip power supply rejection circuit is used to
achieve both single-ended and differential rejection
from the +5 V VCC rail. This rejection ensures that
performance is not degraded by noise on the power
supply. The circuit achieves a power supply rejection
on the outputs of 38 dB for single-ended and 24 dB
for differential operation, up to 100 kHz. The use of
external decoupling will help to remove any unwanted
signals at higher frequencies.

Data

Laser

Driver

SE1150/51/52

SE1250

Post

Amplifier

LOS

2

Receiver Module

SE1050W

TZ

Amplifier

PIN

Ck In

Data

Clock

Mux

CDR &

Demux

2

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SE1050W

LightCharger™ 10 Gb/s Transimpedance Amplifier

Final

Absolute Maximum Ratings

These are stress ratings only. Exposure to stresses beyond these maximum ratings may cause permanent damage
to, or affect the reliability of the device. Avoid operating the device outside the recommended operating conditions
defined below.

Symbol Parameter Min Max Unit

VCC Supply Voltage –0.7 6.0 V
VIO Voltage at any input or output –0.5 VCC+0.5 V

I

IO

IIO Current sourced into pin TZ_IN –5 5 mA

Current sourced into any input or output except
TZ_IN

–20 20 mA

V

ESD

V

ESD

Tstg Storage Temperature –65 150

Electrostatic Discharge (100 pF, 1.5 kΩ) except
TZ_IN and ACGND

Electrostatic Discharge (100 pF, 1.5 kΩ) pins
TZ_IN and ACGND

–2 2 kV

–0.25 0.25 kV

Recommended Operating Conditions

Symbol Parameter Min Typ Max Unit

VCC Supply Voltage 4.7 5.0 5.3 V
Tj Operating Junction Temperature –40 100

DC Electrical Characteristics

Symbol Parameter Min Typ Max Unit

ICC Supply Current 86 130 mA
Vin Input Bias Voltage 1.28 1.29 1.34 V
Vout Output Bias Voltage 3.0 V
Rout Output Resistance 38 50 62

°C

°C

Ω

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