SIGE PA2423L Datasheet
2
PA2423L
2.4 GHz Bluetooth Class 1 Power Amplifier IC
Preliminary Information
Applications
Bluetooth
USB Dongles
Laptops
Access Points
Cordless Piconets
tm
Class 1
Features
+22.5dBm at 45% Power Added Efficiency
Low current 80mA typical @ Pout=+20 dBm
Temperature stability better than 1dB
Power-control and Power-down modes
Single 3.3 V Supply Operation
Temperature rating: -40C to +85C
Very small plastic package - 6 lead LPCC
(1.6mm x 3.0mm)
Ordering Information
Type Package
PA2423L 6 - LPCC Tape and reel
PA2423L-EV Evaluation kit
Shipping
Method
Tubes -samples
Product Description
A monolithic, high-efficiency, silicon-germanium
power amplifier IC, the PA2423L is designed for
class 1 Bluetooth
delivers +22.5 dBm output power with 45%
power-added efficiency – making it capable of
overcoming insertion losses of up to 2.5 dB
between amplifier output and antenna input in
class 1 Bluetooth
The amplifier features:
an analog control input for improving PAE at
reduced output power levels;
a digital control input for controlling power up
and power down modes of operation.
An on-chip ramping circuit provides the turnon/off switching of amplifier output with less than
3dB overshoot, meeting the Bluetooth
specification 1.1.
The PA2423L operates at 3.3V DC. At typical
output power level (+22.5 dBm), its current
consumption is 125 mA.
The silicon/silicon-germanium structure of the
PA2423L – and its exposed-die-pad package,
soldered to the system PCB – provide high
thermal conductivity and a subsequently low
junction temperature. This device is capable of
operating at a duty cycle of 100 percent.
tm
2.4 GHz radio applications. It
tm
applications.
tm
Functional Block Diagram
V
V
CTL
Bias Generator
IN
Stage 1
GND GND
Interstage
Match
V
CC1
DOC# 05PDS002 Rev 4 07/26/2001 Page 1 of 11
CC0VRAMP
Ramp
Circuitry
Stage 2
OUT/ V
CC
2.4 GHz Bluetooth Class 1 Power Amplifier IC
Pin Out Diagram
TOP VIEW BOTTOM VIEW
PA2423L
Preliminary Information
1
6
6
6
SiGe
2
2423L
3
Pin Out Description
Pin No. Name Description
1
2
3 IN
4
5
6
Die Pad GND Heatslug Die Pad is ground
V
CTL
V
RAMP
V
CCO
V
CC1
OUT/V
Controls the output level of the power amplifier. An analog control signal between
0V and Vcc varies the PA output power between minimum and maximum values
Enable/Disable the power amplifier. A digital control signal with Vcc logic high
(power up) and 0V logic low (power down) is used to turn the device on and off.
Power amplifier RF input, external input matching network with DC blocking is
required
Bias supply voltage
Stage 1 collector supply voltage, external inter-stage matching network is required
PA Output and Stage2 collector supply voltage, external output matching network
CC2
with DC blocking is required
5
4
5
5
4
4
Die
Die
3
3
1
1
2
2
DOC# 05PDS002 Rev 4 07/26/2001 Page 2 of 11
Absolute Maximum Ratings
Symbol Parameter Min. Max. Unit
PA2423L
2.4 GHz Bluetooth Class 1 Power Amplifier IC
Preliminary Information
V
CC
V
CTL
V
RAMP
IN RF Input Power +8 dBm
T
A
T
STG
T
j
Supply Voltage -0.3 +3.6 V
Control Voltage -0.3
Ramping Voltage -0.3
Operating Temperature Range
Storage Temperature Range
Maximum Junction Temperature
-40 +85 °C
-40
V
CC
V
CC
+150
+150 °C
V
V
°C
Operation in excess of any one of above Absolute Maximum Ratings may result in permanent damage. This
device is a high performance RF integrated circuit with ESD rating < 600V and is ESD sensitive. Handling
and assembly of this device should be at ESD protected workstations.
DC Electrical Characteristics
Conditions: VCC0 = VCC1 = VCC2 = VRAMP = 3.3V, VCTL = 3.3V, PIN = +2dBm,TA =25°C, f = 2.45GHz,
Symbol Note Parameter Min. Typ. Max. Unit
∆Icc
Input and Output externally matched to 50Ω ,unless otherwise noted.
VCC
1 Supply Current (ICC = IVCC0 + IVCC1 +I VCC2), VCTL = 3.3V 125 150 mA
3
PA Output Power Control Voltage Range 0 VCC V
1 Current sourced by VCTL Pin 200 250
3 Logic High Voltage 2.0 V
3 Logic Low Voltage 0.8 V
1 Leakage Current when Vramp = 0V, Vctl = high 0.5 10
V
V
I
ICC
CTL
I
CTL
RAMP
stdby
temp
Supply Voltage 3 3.3 3.6 V
Supply Current variation over temperature from T
(-40°C <TA <+85°C)
= 25°C
A
25 %
µA
µA
DOC# 05PDS002 Rev 4 07/26/2001 Page 3 of 11
AC Electrical Characteristics
PA2423L
2.4 GHz Bluetooth Class 1 Power Amplifier IC
Preliminary Information
Conditions: V
CC0
= V
CC1
= V
CC2
= V
RAMP
=3.3V, V
= 3.3V, PIN =+2 dBm, TA =25°C, f =2.45 GHz,
CTL
Input and Output externally matched to 50Ω, unless otherwise noted.
Symbol Note Parameter Min. Typ. Max. Unit
f
L-U
P
out
∆P
dP
temp
OUT
/dVCTL
PAE
G
VAR
2f, 3f, 4f, 5f
IS21 IOFF
IS12I
STAB
Notes: (1) Guaranteed by production test at T
3 Frequency Range 2400 2500 MHz
1 Output Power @ PIN =+2 dBm, V
1 Output Power @ PIN =+2 dBm, V
3
Output Power variation over temperature (-40°C <T
<+85°C)
= 3.3V 20 22.5 23.5 dBm
CTL
=0.4V -20 0 dBm
CTL
A
1 2 dB
3 Control Voltage Sensitivity 120 dBm/V
Power Added Efficiency at +22.5 dBm Output Power 45 %
3 Gain Variation over band (2400-2500 MHz) 0.7 1.0 dB
3.4 Harmonics -40 -35 dBc
2
Isolation in “OFF” State, P
= +2dBm, VRAMP = 0V
IN
15 20 dB
2 Reverse Isolation 32 42 dB
2 Stability (PIN = +2dBm, Load VSWR = 6:1)
=25°C.
A
All non-harmonically related
outputs less than -50 dBc
(2) Guaranteed by design only
(3) Guaranteed by design and characterization
(4) Harmonic levels are greatly affected by topology of external matching networks.
Typical Performance Characteristics
Test Conditions: SiGe PA2423L-EV: V
CC0=VCC1=VCC2=VRAMP
= 2.45GHz, Input and Output externally matched to 50Ω, unless otherwise noted.
Pout, Icc vs Supply Voltage
24
23
22
21
20
19
18
(dBm)
17
16
Output Power
15
14
2.4 2.6 2.8 3 3.2 3.4 3.6
150
142
134
126
118
110
(mA)
102
94
86
Supply current
78
70
Vcc(V)
Pout Icc
DOC# 05PDS002 Rev 4 07/26/2001 Page 4 of 11
=3.3V, V
= 3.3V, PIN = +2 dBm, TA = 25°C, f
CTL
Output Power, Gain vs Input Power
25
20
15
10
5
Output Power (dBm)
0
-28 -24 -20 -16 -12 -8 -4 0 4 8
Pout
Input Power (dBm)
Gain
30.00
25.00
20.00
15.00
10.00
5.00
Gain (dB)
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