SIGE PA2423G Datasheet

2

PA2423G

2.4 GHz Bluetooth Class 1 Power Amplifier IC
Preliminary Information

Applications

 Bluetooth
 USB Dongles
 Laptops
 Access Points

 Cordless Piconets
 Flip chip and chip-on-board applications

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Class 1

Features

 +22.5 dBm at 47% Power Added Efficiency
 Low current 80 mA typical @ Pout=+20 dBm
 Temperature stability better than 1dB
 Power-control and Power-down modes
 -40C to +85C temperature range
 Gold bump bare die (0.63mm x 0.96mm)

Ordering Information

Part Package

PA2423G

Gold bump bare
die

PA2423G-EV Evaluation kit

Shipping

Method

Diced wafer

Waffle pack

Product Description

A monolithic, high-efficiency, silicon-germanium
power amplifier IC, the PA2423G is designed for
Class 1 Bluetoothtm 2.4 GHz radio applications. It
delivers +22.5 dBm output power with 47% power­added efficiency – making it capable of
overcoming insertion losses of up to 2.5 dB
between amplifier output and antenna input in
Class 1 Bluetooth

The amplifier features:

 an analog control input for improving PAE at

reduced output power levels;

 a digital control input for controlling power up

and power down modes of operation.

An on-chip ramping circuit corrects the turn-on/off
switching of amplifier output with less than 3 dB
overshoot, meeting the Bluetooth

The PA2423G operates at 3.3V DC. At typical
output power level (+22.5 dBm), its current
consumption is 120 mA.

The silicon/silicon-germanium structure of the
PA2423G provides high thermal conductivity and
a subsequently low junction temperature. This
device is capable of operating at a duty cycle of
100 percent.

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applications.

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specification 1.1.

Functional Block Diagram

V

CC0VRAMP

Ramp

Circuitry

Stage 2

OUT/ V

CC

IN

V

CTL

Bias Generator

Stage 1

GND GND

Interstage

Match

V

CC1

DOC # 05PDS003  Rev 5  07/26/2001 Page 1

2.4 GHz Bluetooth Class 1 Power Amplifier IC

Pad Description

For reference of pad numbers to the package drawings, see pages 4 and 5.

PA2423G

Preliminary Information

Number Name Description

1

2

3

4

5

6

7

8

9

10

11

12

IN PA input X = 192µm ± 10µm, Y = 315µm ± 10µm

VRAMP PA enable/disable control input X = 192µm ± 10µm, Y = 515µm ± 10µm

GND1 Ground X = 352µm ± 10µm, Y = 515µm ± 10µm

VCTL Output power level control X = 512µm ± 10µm, Y = 515µm ± 10µm

GND2 Ground X = 672µm ± 10µm, Y = 515µm ± 10µm

GND3 Ground X = 832µm ± 10µm, Y = 515µm ± 10µm

OUT/VCC2 PA output and stage2 collector supply voltage X = 752µm ± 10µm, Y = 315µm ± 10µm

GND4 Ground X = 832µm ± 10µm, Y = 115µm ± 10µm

GND5 Ground X = 672µm ± 10µm, Y = 115µm ± 10µm

VCC1 Stage1 collector supply voltage X = 512µm ± 10µm, Y = 115µm ± 10µm

GND6 Ground X = 352µm ± 10µm, Y = 115µm ± 10µm

VCC0 Ramp supply voltage X = 192µm ± 10µm, Y = 115µm ± 10µm

Absolute Maximum Ratings

Pad Coordinate, Center of Pad

(lower left corner is (0.0))

Symbol Parameter Min. Max. Unit

VCC Supply Voltage -0.3 +3.6 V

VCTL Control Voltage -0.3

VRAMP Ramping Voltage -0.3

IN RF Input Power +8 dBm

TA Operating Temperature Range

TSTG Storage Temperature Range

Tj Maximum Junction Temperature

Operation in excess of any one of the above Absolute Maximum Ratings may result in permanent damage. This device is a
high performance RF integrated circuit with EST rating < 600V and is ESD sensitive. Handling and assembly of this device
should be at ESD protected workstations.

-40 +85 °C

-40

V

CC

V

CC

+150

+150 °C

V

V

°C

DOC # 05PDS003  Rev 5  07/26/2001 Page 2

DC Electrical Characteristics

PA2423G

2.4 GHz Bluetooth Class 1 Power Amplifier IC
Preliminary Information

Conditions: V

= V

= V

= V

CC0

CC1

CC2

= 3.3V, V

RAMP

= 3.3V, PIN = +2dBm,TA =25°C, f = 2.45GHz,

CTL

Input and Output externally matched to 50Ω ,unless otherwise noted.

Symbol Note Parameter Min. Typ. Max. Unit

VCC

ICC 1 Supply Current (ICC = IVCC0 + IVCC1 + IVCC2 ) 120 150 mA

∆ICC

temp

VCTL PA Output Power Control Voltage Range 0 VCC V

ICTL 1 Current sourced by VCTL Pin 200 250

VRAMP

I

1 Leakage Current when VRAMP = 0V 0.5 10

stby

Supply Voltage 3.0 3.3 3.6 V

3

Supply Current variation over temperature, (-40°C < T

A <+85°C)

25 %

3 Logic High Voltage 2.0 V

3 Logic Low Voltage

0.8 V

AC Electrical Characteristics

Conditions: V

Symbol Note Parameter Min. Typ. Max. Unit

fL-U

POUT

=V

CC0

CC1 =VCC2 =VRAMP

=3.3V, V

CTL

=3.3V,P

=+2 dBm, TA =25°C, f = 2.45GHz,

IN

Input and Output externally matched to 50Ω, unless otherwise noted

Frequency Range

3

240

0

2500 MHz

1 Output Power @ PIN =+2 dBm,VCTL = 3.3V 20.0 22.5 23.5 dBm

1 Output Power @ PIN =+2 dBm,VCTL =0.4V -8 0 dBm

µA

µA

∆P

TEMP

3

P

OUT variation over temperature (-40°C <TA <+85°C), VCTL =3.3V

1 2 dB

dP OUT /dVCTL 3 Control Voltage Sensitivity 60 120 dBm/V

PAE Power Added Efficiency at +22.5 dBm Output Power 47 %

GVAR 3 Gain Variation over band (2400-2500 MHz) 0.7 1 dB

2f, 3f, 4f, 5f 3,4 Harmonics -35 -30 dBc

IS21IOFF 2 Isolation in “OFF” State, PIN =+2dBm,VRAMP =0V 20 25 dB

IS12 I 2 Reverse Isolation 32 42 dB

STAB 2 Stability (PIN = +2dBm, Load VSWR = 6:1)

All non-harmonically related
outputs less than -50 dBc

Notes: (1) Guaranteed by production test at TA =25°C.

(2) Guaranteed by design only.
(3) Guaranteed by design and characterization.
(4) Harmonic levels are greatly affected by topology of external matching networks.
(5) RF characteristics specified above are for direct die attach (Flip-chip) on SiGe Applications

Board. For wire bonded applications there may be some degradation in performance due to
effects of bond wires and interconnect.

DOC # 05PDS003  Rev 5  07/26/2001 Page 3