SIGE LPT16ED Datasheet

LPT16ED

30 GHz SiGe Bipolar Transistor

Final

Applications

 Low phase noise oscillators up to 16 GHz
 VCO’s, DRO’s and YIG oscillators
 Point-to-point radios
 Satellite communications
 Fiber optics, OC-192 and OC-768
 Local Multipoint Distribution Systems, LMDS

Features

 Low 1/f noise: -142 dBc/Hz at 100 Hz offset
 Phase noise: -167 dBc/Hz at 100 kHz offset
 Output power up to +13 dBm
 Operation down to 1 volt, 2 mA
 Gold bump pads for wire bond or flip chip (for

direct die attachment)

Ordering Information

Type Package Remark

LPT16ED Bare Die Shipped in

Waffle Pack

Functional Block Diagram

Product Description

The LPT16ED is a silicon germanium low phase
noise, high frequency NPN transistor for oscillator
applications up to 16GHz.

The transistor exhibits low 1/f noise and provides
+13 dBm typical output power at V
equal to 20 mA. It is easily operated from a single
supply voltage with appropriate external passive
components.

The silicon germanium technology used in this device
provides outstanding high-frequency performance
combined with high thermal conductivity and superior
reliability under harsh operating and storage
conditions.

A complete mechanical description of the transistor is
available under SiGe Semiconductor Document
07MS001.

of 3V and IC

CE

C

B

E

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LPT16ED

30 GHz SiGe Bipolar Transistor

Final

Absolute Maximum Ratings

Operation in excess of any one of Absolute Maximum Ratings may result in permanent damage. This is a high
performance RF device with ESD rating < 2keV. Handling and assembly of this device should be done at ESD
protected workstations.

Symbol Parameter Min. Max. Unit

V

Collector to Base Voltage +13.0 V

CBO

V

Collector to Emitter Voltage +4.0 V

CEO

V

Emitter to Base Voltage +1.5 V

EBO

IC Collector Current 80 mA

IB Base Current 2.0 mA

PT Total Power Dissipation 250 mW

Tj Junction Temperature +150

T

Storage Temperature -65 +150

STG

DC Electrical Characteristics

Conditions: T

Symbol Parameter Condition Min. Typ. Max. Unit

VBE Base-emitter voltage IC = 1µA 670 687 700 mV

BV

CEO

BV

CES

BV

EBO

BV

CBO

VA Early voltage IC = 10mA, VCE = 3V 100 200 300 V

I

CBO

I

EBO

hFE DC current gain VCE = 2V, IC = 20mA 50 60 150

= unless otherwise specified 25°C

A

Collector-emitter
breakdown voltage

Collector-emitter
breakdown voltage

Emitter-base breakdown
voltage

Collector-base
breakdown voltage

Collector-base cutoff
current

Emitter-base cutoff
current

Open base 4.0 4.5 5.0 V

Base-emitter shorted via
100kΩ

= 100µA, open

I

E

collector

14 15.0 16 V

2.0 2.3 2.6 V

Open emitter 14 15.0 16 V

VCB = 5V and IE = 0 100 pA

= 1.5V and IC = 0 5 10 15 µA

V

EB

°C
°C

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