Siemens TAF1453G, TAE1453G Datasheet
Single PNP-Operational Amplifiers
Bipolar IC
Features
● PNP input
● Supply voltage range between 3 V and 36 V
● Low current consumption, 0.25 mA typ.
● Extremely large control range
● Low output saturation voltage, almost
independent of load current
● Output current up to 70 mA (100 mA max.)
● Wide common-mode range
● Wide operating temperature range (TAF 1453)
● Open collector output
Applications
TAE 1453
TAF 1453
P-DSO-6-1
● Amplifier
● Level converter
● Driver
● Zero voltage switch
● Comparator
Type Ordering Code Package
TAE 1453 G Q67000-A2106 P-DSO-6-1 (SMD)
TAF 1453 G Q67000-A2209 P-DSO-6-1 (SMD)
These operational amplifiers are circuits for universal applications having a PNP-input
differential stage and an open collector output. Apart from one resistor, only active
components are used. The integrated regulator provides for all parameters a large
degree of independence from the supply voltage.
Semiconductor Group 1 01.96
Pin Configurations
(top view)
TAE 1453
TAF 1453
TAE 1453 G
TAF 1453 G
Semiconductor Group 2
C
= output frequency
C
compensation (if required);
R
= load resistance
L
(collector resistance)
TAE 1453
TAF 1453
Connection Diagram
Circuit Diagram
Semiconductor Group 3
TAE 1453
TAF 1453
Absolute Maximum Ratings (TAE 1453 G)
Parameter Symbol Limit Values Unit
Supply voltage V
Output current
Differential input voltage
Junction temperature
Storage temperature range
I
V
T
T
Thermal resistance
system - air TAE 1453 G
R
Operating Range (TAE 1453 G)
Supply voltage
Ambient temperature
V
T
S
Q
ID
j
stg
th SA
S
A
± 18 V
100 mA
± V
S
150
– 55 to 150
V
°C
°C
200 K/W
± 2 to ± 18
V
(± 1.5 V with
slightly increased
offset voltage)
– 25 to 85 °C
Characteristics (TAE 1453 G)
V
= ± 5Vto±15 V; RL = 10 kΩ, unless otherwise specified
S
Parameter Symbol Limit Values
T
= 25 °C
A
min. typ. max. min. max.
Open-loop
I
S
0.25 0.4 0.45 mA
current consumption
Input offset voltage,
Input offset current
Input current
R
= 50 Ω V
G
IO
I
IO
I
I
– 5.5 5.5 – 7 7 mV
–15
40
15
150
Limit
Values
T
= – 25
A
to 85 °C
– 100
100
200
Unit
nA
nA
Semiconductor Group 4
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