Siemens SXTA93, SXTA92 Datasheet

PNP Silicon High Voltage Transistors SXTA 92

SXTA 93

● High breakdown voltage

● Low collector-emitter saturation voltage

Type Ordering Code

SXTA 92
SXTA 93

Marking

2D
2E

(tape and reel)

Q68000-A8393
Q68000-A8651

Pin Configuration

1 2 3

B C E

Package

SOT-89

Maximum Ratings
Parameter Symbol Values Unit

SXTA 92 SXTA 93

Collector-emitter voltage VCE0 V
Collector-base voltage VCB0
Emitter-base voltage VEB0

300 200
300 200

5
Collector current IC mA500
Total power dissipation, T

S = 130 ˚C Ptot W

Junction temperature Tj ˚C
Storage temperature range T

stg

– 65 … + 150

1

150

Thermal Resistance

1)

Junction - ambient

2)

Junction - soldering point R

1)

For detailed information see chapter Package Outlines.

2)

Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.

Semiconductor Group 1

Rth JA ≤ 75 K/W

th JS ≤ 20

5.91

Electrical Characteristics

I

I

I

I
I
I

I

I

I

A = 25 ˚C, unless otherwise specified.

at T

DC characteristics

SXTA 92

SXTA 93

UnitValuesParameter Symbol

min. typ. max.

(BR)CE0

V

C = 1 mA SXTA 92

SXTA 93

Collector-base breakdown voltage

C = 100 µA SXTA 92

(BR)CB0

V

SXTA 93

V

Emitter-base breakdown voltage

E = 100 µA

Collector-base cutoff current

(BR)EB0 5––

I

CB0

VCB = 200 V, IE = 0 SXTA 92

CB = 160 V, IE = 0 SXTA 93

V

CB = 200 V, IE = 0, TA = 125 ˚C SXTA 92

V

CB = 160 V, IE = 0, TA = 125 ˚C SXTA 93

V

EB = 4 V, IC = 0

V

I

EB0 – – 100

300
200

300
200

–
–
–
–

–
–

–
–

–
–
–
–

–
–

–
–

250
250
20
20

hFE

C = 1 mA, VCE = 10 V
C = 10 mA, VCE = 10 V
C = 30 mA, VCE = 10 V SXTA 92

SXTA 93

25
40
25
25

–
–
–
–

–
–
–
–

VCollector-emitter breakdown voltage

nA
nA

µA
µA

nAEmitter-base cutoff current

–DC current gain

Collector-emitter saturation voltage

C = 20 mA, IB = 2 mA SXTA 92

1)

SXTA 93

VCEsat

–
–

–
–

0.5

0.4

V

Base-emitter saturation voltage

C = 20 mA, IB = 2 mA

1)

VBEsat – – 0.9

AC characteristics

C = 10 mA, VCE = 20 V, f = 100 MHz

CB = 20 V, f = 1 MHz SXTA 92

V

SXTA 93

1)

Pulse test conditions: t ≤ 300 µs, D ≤ 2%.

Semiconductor Group 2

f

T 50 – –

obo

C

–
–

–
–

MHzTransition frequency

pFOutput capacitance
6
8