Siemens SXTA43, SXTA42 Datasheet
NPN Silicon High Voltage Transistors SXTA 42
SXTA 43
● High breakdown voltage
● Low collector-emitter saturation voltage
Type Ordering Code
SXTA 42
SXTA 43
Marking
1D
1E
(tape and reel)
Q68000-A8394
Q68000-A8650
Pin Configuration
1 2 3
B C E
Package
SOT-89
Maximum Ratings
Parameter Symbol Values Unit
SXTA 42 SXTA 43
Collector-emitter voltage VCE0 V
Collector-base voltage VCB0
Emitter-base voltage VEB0
300 200
300 200
6
Collector current IC mA500
Total power dissipation, T
S = 130 ˚C Ptot W
Junction temperature Tj ˚C
Storage temperature range T
stg
– 65 … + 150
1
150
Thermal Resistance
1)
Junction - ambient
2)
Junction - soldering point R
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group 1
Rth JA ≤ 75 K/W
th JS ≤ 20
5.91
Electrical Characteristics
I
I
I
I
I
I
I
I
I
A = 25 ˚C, unless otherwise specified.
at T
DC characteristics
SXTA 42
SXTA 43
UnitValuesParameter Symbol
min. typ. max.
(BR)CE0
V
C = 1 mA SXTA 42
SXTA 43
Collector-base breakdown voltage
C = 100 µA SXTA 42
(BR)CB0
V
SXTA 43
V
Emitter-base breakdown voltage
E = 100 µA
Collector cutoff current
(BR)EB0 6––
I
CB0
VCB = 200 V, IE = 0 SXTA 42
CB = 160 V, IE = 0 SXTA 43
V
CB = 200 V, IE = 0, TA = 125 ˚C SXTA 42
V
CB = 160 V, IE = 0, TA = 125 ˚C SXTA 43
V
EB = 6 V, IC = 0
V
I
EB0 – – 100
300
200
300
200
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
100
100
10
10
hFE
C = 1 mA, VCE = 10 V
C = 10 mA, VCE = 10 V
C = 30 mA, VCE = 10 V SXTA 42
SXTA 43
25
40
40
40
–
–
–
–
–
–
–
–
VCollector-emitter breakdown voltage
nA
nA
µA
µA
nAEmitter-base cutoff current
–DC current gain
Collector-emitter saturation voltage
C = 20 mA, IB = 2 mA SXTA 42
1)
SXTA 43
VCEsat
–
–
–
–
0.5
0.4
V
Base-emitter saturation voltage
C = 20 mA, IB = 2 mA
1)
VBEsat – – 0.9
AC characteristics
C = 10 mA, VCE = 20 V, f = 100 MHz
CB = 20 V, f = 1 MHz SXTA 42
V
SXTA 43
1)
Pulse test conditions: t ≤ 300 µs, D ≤ 2%.
Semiconductor Group 2
f
T 50 – –
obo
C
–
–
–
–
MHzTransition frequency
pFOutput capacitance
3
4
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