Siemens SXT3904 Datasheet

NPN Silicon Switching Transistor SXT 3904

● High current gain: 0.1 mA to 100 mA

● Low collector-emitter saturation voltage

Type Ordering Code

SXT 3904 Q68000-A83961A SOT-89

Marking

(tape and reel)

Pin Configuration

1 2 3

B C E

Package

Maximum Ratings
Parameter Symbol Values Unit

Collector-emitter voltage V

CE0 40 V

Collector-base voltage VCB0 60
Emitter-base voltage VEB0 6
Collector current I
Total power dissipation, TS =95˚C
Junction temperature T
Storage temperature range T

C 200 mA

tot 1W

P

j 150 ˚C
stg – 65 … + 150

Thermal Resistance

Junction - ambient

2)

Rth JA ≤ 125 K/W

1)

Junction - soldering point Rth JS ≤ 55

1)

For detailed information see chapter Package Outlines.

2)

Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.

Semiconductor Group 1

5.91

Electrical Characteristics

I

I

I

I
I
I
I
I

I
I

I
I

A = 25 ˚C, unless otherwise specified.

at T

SXT 3904

Parameter Symbol

UnitValues

min. typ. max.

DC characteristics

V

(BR)CE0 40 – –

C = 1 mA

Collector-base breakdown voltage

C = 10 µA

Emitter-base breakdown voltage

E = 10 µA

CB = 30 V

V

Collector-emitter cutoff current

CE = 30 V, VBE = 3 V

V

C = 100 µA, VCE = 1 V
C = 1 mA, VCE = 1 V
C = 10 mA, VCE = 1 V
C = 50 mA, VCE = 1 V
C = 100 mA, VCE = 1 V

1)

C = 10 mA, IB = 1 mA
C = 50 mA, IB = 5 mA

Base-emitter saturation voltage

C = 10 mA, IB = 1 mA
C = 50 mA, IB = 5 mA

1)

V

(BR)CB0 60 – –

V

(BR)EB0 6––

I

CB0 ––50

I

CEV ––50

FE

h

V

V

40
70
100
60
30

CEsat

–
–

BEsat

0.65
–

–
–
–
–
–

–
–

–
–

–
–
300
–
–

0.2

0.3

0.85

0.95

VCollector-emitter breakdown voltage

nACollector-base cutoff current

–DC current gain

VCollector-emitter saturation voltage

1)

Pulse test conditions: t ≤ 300 µs, D ≤ 2 %.

Semiconductor Group 2

Electrical Characteristics

I
R

I

I

I

I

I

I

I

A = 25 ˚C, unless otherwise specified.

at T

AC characteristics

C = 10 mA, VCE = 20 V, f = 100 MHz

SXT 3904

min. typ. max.

f

T 300 – –

UnitValuesParameter Symbol

MHzTransition frequency

C

obo ––4

CB = 5 V, f = 1 MHz

V

Input capacitance

EB = 0.5 V, f = 1 MHz

V

CE = 1 mA, VCE = 10 V, f = 1 kHz

Voltage feedback ratio

C = 1 mA, VCE = 10 V, f = 1 kHz

C = 1 mA, VCE = 10 V, f = 1 kHz

C = 1 mA, VCE = 10 V, f = 1 kHz

C

ibo ––8

h

ie 1–10

h

re 0.5 – 8

h

fe 100 – 400

h

oe 1–40

NF ––5

C = 0.1 mA, VCE = 5 V, f = 10 Hz to 15 kHz

S = 1 kΩ

pFOutput capacitance

kΩInput impedance

10

–Small-signal current gain

µSOutput admittance

dBNoise figure

–4

Switching times

CC = 3 V, VBE = 0.5 V, IC = 10 mA,

V

B1 = 1 mA

t

d

tr

–
–

–
–

35
35

ns
ns

V

CC = 3 V, IC = 10 mA,

B1 = IB2 = 1 mA

ts
tf

–
–

–
–

200
50

ns
ns

Semiconductor Group 3