Siemens SXT2907A Datasheet
PNP Silicon Switching Transistor SXT 2907 A
● High current gain: 0.1 mA to 500 mA
● Low collector-emitter saturation voltage
Type Ordering Code
SXT 2907 A Q68000-A83002F SOT-89
Marking
(tape and reel)
Pin Configuration
1 2 3
B C E
Package
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage V
CE0 60 V
Collector-base voltage VCB0 60
Emitter-base voltage VEB0 5
Collector current I
Total power dissipation, TS = 120˚C
Junction temperature T
Storage temperature range T
C 600 mA
tot 1W
P
j 150 ˚C
stg – 65 … + 150
Thermal Resistance
Junction - ambient
2)
Rth JA ≤ 90 K/W
1)
Junction - soldering point Rth JS ≤ 30
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group 1
5.91
Electrical Characteristics
I
I
I
I
I
I
I
I
I
I
I
I
A = 25 ˚C, unless otherwise specified.
at T
SXT 2907 A
Parameter Symbol
UnitValues
min. typ. max.
DC characteristics
V
(BR)CE0 60 – –
C = 10 mA
Collector-base breakdown voltage
C = 10 µA
Emitter-base breakdown voltage
E = 10 µA
Collector-base cutoff current
CB = 60 V, IE = 0
V
CB = 60 V, IE = 0, TA = 125 ˚C
V
CE = 30 V, VBE = 0.5 V
V
Emitter-base cutoff current
EB = 3 V, IC = 0
V
V
(BR)CB0 60 – –
V
(BR)EB0 5––
CB0
I
–
–
I
CEX ––50
I
EB0 ––10
–
–
10
10
VCollector-emitter breakdown voltage
nA
µA
nACollector cutoff current
CE = 30 V, VBE = 3 V
V
C = 100 µA, VCE = 10 V
C = 1 mA, VCE = 10 V
C = 10 mA, VCE = 10 V
C = 150 mA, VCE = 10 V
C = 500 mA, VCE = 10 V
C = 150 mA, IB = 15 mA
C = 500 mA, IB = 50 mA
Base-emitter saturation voltage
C = 150 mA, IB = 15 mA
C = 500 mA, IB = 50 mA
1)
1)
Base cutoff current
I
BL ––50
FE
h
V
V
75
100
100
100
50
CEsat
–
–
BEsat
–
–
–
–
–
–
–
–
–
–
–
–
–
–
300
–
0.4
1.6
1.3
2.0
–DC current gain
VCollector-emitter saturation voltage
1)
Pulse test conditions: t ≤ 300 µs, D ≤ 2 %.
Semiconductor Group 2
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