Ternary PIN Photodiode in TO-Package,
Central Pin
• InGaAs/InP − PIN-photodiode
• Designed for application in fiber-optic
• communication systems
• Sensitive receiver for the 2
nd
and 3
rd
optical
• window (1300nm and 1500nm)
• Suitable for bit rates up to 2.5 Gbit/s
• Low junction and low package capacitance
• Fast switching times
• Low dark current
• Low noise
• High reverse-current stability by planar structure
• Hermetically sealed 3-pin metal case with central pin
SRD 00231Z
Type Ordering Code Connector/Flange
SRD 00231Z Q62702-Pxxxx TO with central pin
Maximum Ratings
Parameter Symbol
Forward current I
Reverse voltage V
Operating and storage temperature TA; T
Max. radiant power into the opt. port
(V
= 5 V)
R
Soldering time (wave / dip soldering),
distance between solder point and base plate
≥ 2 mm, 260 °C
Φ
t
F
s
R
port
stg
−
Unit
mA
V
°C
mW
s
Semiconductor Group 1 02.95
Characteristics
All optical data refer to an optimally coupled 10/125 µm SM fiber.
SRD 00231Z
Parameter Symbol
Spectral sensitivity λ = 1300 nm, VR = 5 V S
Change in spectral sensitivity in operating
∆S
λ
λ
temperature range
Rise and fall time R
λ = 1310 nm, Φ
Total capacitance VR = 5 V,Φ
= 50 Ω, VR = 5 V,
L
= 100 µW
port
ort
= 0
t
C
; t
r
f
5
= 1 MHz
Dark current VR = 5 V, T
Capacitance C = f(VR)
Φ
= 0, f = 1 MHz
ort
= 85 °C, Φ
A
= 0 I
port
D
Relative Spectral Sensitivity
V
= 5 V
R
Unit
A/W
%/K
ns
pF
nA
10
1
Capacitance in pF
0.1
0.1 1 10 100
Reverse Bias in V
1
0,9
0,8
0,7
0,6
0,5
0,4
0,3
Sensitivity in A/W
0,2
0,1
0
800 1200 1600 2000
Wav e lengt h in nm
Semiconductor Group 2