Siemens SRD00231Z Datasheet

Ternary PIN Photodiode in TO-Package,
Values
10
20
40 … + 85
1
10
Central Pin
InGaAs/InP − PIN-photodiode
Designed for application in fiber-optic
communication systems
Sensitive receiver for the 2
and 3
rd
optical
window (1300nm and 1500nm)
Suitable for bit rates up to 2.5 Gbit/s
Low junction and low package capacitance
Fast switching times
Low dark current
Low noise
High reverse-current stability by planar structure
Hermetically sealed 3-pin metal case with central pin
SRD 00231Z
Type Ordering Code Connector/Flange
SRD 00231Z Q62702-Pxxxx TO with central pin
Maximum Ratings Parameter Symbol
Forward current I Reverse voltage V Operating and storage temperature TA; T Max. radiant power into the opt. port
(V
= 5 V)
R
Soldering time (wave / dip soldering), distance between solder point and base plate
2 mm, 260 °C
Φ
t
F
s
R
port
stg
Unit
mA V °C mW
s
Semiconductor Group 1 02.95
Characteristics
Values
0.9 (≥ 0.8)
< 0.2
0.25 (≤ 0.4)
p
f
0.7 (≤ 0.9)
1 (≤ 50)
p
All optical data refer to an optimally coupled 10/125 µm SM fiber.
SRD 00231Z
Parameter Symbol
Spectral sensitivity λ = 1300 nm, VR = 5 V S Change in spectral sensitivity in operating
S
λ
λ
temperature range Rise and fall time R
λ = 1310 nm, Φ Total capacitance VR = 5 V,Φ
= 50 , VR = 5 V,
L
= 100 µW
port
ort
= 0
t
C
; t
r
f
5
= 1 MHz
Dark current VR = 5 V, T
Capacitance C = f(VR)
Φ
= 0, f = 1 MHz
ort
= 85 °C, Φ
A
= 0 I
port
D
Relative Spectral Sensitivity
V
= 5 V
R
Unit
A/W %/K
ns
pF
nA
10
1
Capacitance in pF
0.1
0.1 1 10 100
Reverse Bias in V
1 0,9 0,8 0,7 0,6 0,5 0,4 0,3
Sensitivity in A/W
0,2 0,1
0
800 1200 1600 2000
Wav e lengt h in nm
Semiconductor Group 2
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