Siemens SRD00212Z Datasheet

Ternary PIN Photodiode in TO-Package

Values

10

20

− 40 … + 85

1

10

SRD 00212Z

with Integrated Optics

• InGaAs/InP - PIN-photodiode

• Designed for application in fiber-optic communication

systems

• Sensitive receiver for the 2

(1300 nm and 1500 nm)

nd

and 3

rd

optical window

• Suitable for bit rates up to 1.2 Gbit/s

• Low junction and low package capacitance

• Fast switching times

• Low dark current

• Low noise

• High reverse-current stability by planar structure

• High spectral sensitivity by build in optics

• Hermetically sealed 3-pin metal case

• No z-adjustment necessary (optimum coupling on cap

surface)

Type Ordering Code Connector/Flange

SRD 00212Z Q62702-P3010 TO, with optics

Component with other pin configuration or other package outlines (cap) on request.

Maximum Ratings
Parameter Symbol

Forward current I
Reverse voltage V
Operating and storage temperature T
Max. radiant power into the opt. port

(V

= 5 V)

R

Soldering time (wave / dip soldering), distance
between solder point and base plate ≥ 2 mm,
260 °C

Φ

t

F

s

R

A

port

T

stg

Unit

mA
V
°C
mW

s

Semiconductor Group 1 02.95

Characteristics

Values

0.9 (≥ 0.8)

< 0.2

0.3 (≤ 0.5)

1.0 (≤ 1.5)

T

1 (≤ 50)

All optical data refer to an optimally coupled 10/125 µm SM fiber.

SRD 00212Z

Parameter Symbol

Spectral sensitivity

S

λ

λ = 1300 nm, VR = 5 V

Change in spectral sensitivity in operating

∆S

λ

temperature range
Rise and fall time

R

= 50 Ω, VR = 5 V, λ = 1310 nm, Φ

L

Total capacitance

V

= 5 V, Φ

R

= 0, f = 1 MHz

port

Dark current

V

= 5 V,

R

= 85 °C, Φ

A

port

= 0

Capacitance C = f(VR)

Φ

= 0, f = 1 MHz

port

= 100 µW

port

Relative Spectral Sensitivity

V

= 5 V

R

t

C

I

; t

r

f

5

D

Unit

A/W

%/K

ns

pF

nA

10

1

Capacitance in pF

0.1

0.1 1 10 100

Reverse Bias in V

1
0,9
0,8
0,7
0,6
0,5
0,4
0,3

Sensitivity in A/W

0,2
0,1

0

800 1200 1600 2000

Wav e lengt h in nm

Semiconductor Group 2