Siemens SRD00111Z Datasheet
Silicon PIN Photodiode in TO-Package
Values
50
100
125
− 55 … 125
10
SRD 00111Z
• Si-PIN-photodiode
• Designed for application in fiber-optic
• Transmission systems
• Sensitive receiver for the 1
st
window (850 nm)
• Suitable for bit rates up to 565 Mbit/s
• Low junction and low package capacitance
• Fast switching times
• Low dark current
• Low noise
• Hermetically sealed 3-pin metal case
• Cathode electrically isolated from case
Type Ordering Code Connector/Flange
SRD 00111Z Q62702-P3019 TO, without optics
Maximum Ratings
Parameter Symbol
Reverse voltage V
Isolation voltage to case V
Junction temperature T
Storage temperature T
Soldering time (wave / dip soldering),
distance between solder point and base plate
≥ 2 mm, 260 °C
R
R
j
stg
t
s
Unit
V
V
°C
°C
s
Semiconductor Group 1 02.95
Characteristics
Values
1
850
0.8
0.55 (≥ 0.45)
0.45
1
1373.3
3
500
1 (≤ 5)
3.3 × 10
−14
3.1 × 10
12
0.2
0.1 (≤ 1)
All data refer to an ambient temperature of 25 °C.
SRD 00111Z
Parameter Symbol
Photosensitive area A
Wavelength of max. sensitivity λ
Smax
Quantumn efficiency at λ = 850 nm η
Spectral sensitivity
λ = 850 nm
λ = 950 nm
Rise and fall time
R
= 50 Ω, VR = 50 V, λ = 850 nm
L
S
S
t
r
λ850
λ950
; t
f
Junction capacitance at f = 1 MHz
V
= 0 V
R
V
= 1 V
R
V
= 12 V
R
V
= 20 V
R
C
C
C
C
0
1
12
20
3 dB bandwidth
R
= 50 Ω, VR = 50 V, λ = 850 nm f
L
c
Unit
mm
nm
A/W
A/W
ns
pF
pF
pF
pF
MHz
2
Dark current
V
= 20 V, E = 0
R
Noise equivalent power
V
= 20 V, λ = 850 nm
R
Detectivity
V
= 20 V, λ = 850 nm
R
Temperature coefficient I
Isolation current, V
= 100 V I
IS
I
D
NEP
*
D
p
TC
IS
nA
W/√Hz
cm√Hz/W
%/K
nA
Semiconductor Group 2
Loading...