Siemens SFH480402, SFH480442, SPLCG81, SPLCG85, SPLCG94 Datasheet
...
Semiconductor Group 1 02.97
Laser Diode on Submount SPL CGxx
1.0 W cw (Class 4 Laser Product) (SFH 4804x2)
Features
•
Efficient radiation source for cw and pulsed operation
•
Reliable InGa(Al)As strained quantum-well material
•
Single emitting area 200 µm × 1 µm
•
Small C-type copper submount for OEM designs
Applications
•
Pumping solid state lasers (Nd: YAG, Yb: YAG, …)
•
Laser soldering, heating, illumination
•
Printing, marking, surface processing
•
Medical applications
•
Testing and measurement applications
Type
Old Type
(as of Oct. 1996)
Wavelength
*)
Ordering Code
SPL CG81
SPL CG85
SPL CG94
SPL CG98
SFH 480402
–
SFH 480442
–
808 nm
850 nm
940 nm
980 nm
Q62702-P358
on request
Q62702-P1617
on request
*) Other wavelengths in the range of 780 nm ... 980 nm are available on request.
Maximum Ratings
(
T
A
= 25 °C)
Parameter
Symbol Values Unit
min. typ. max.
Output power (continuous wave)
1)
P
opt
– – 1.1 W
Output power (quasi-continuous wave)
1)
(
t
p
≤ 150 µs, duty cycle ≤ 1%)
P
qcw
– – 1.5 W
Reverse voltage
V
R
––3V
Operating temperature
2)
T
op
– 10 … + 60 °C
Storage temperature
2)
T
stg
– 40 … + 85 °C
Soldering temperature, max. 10 s
T
s
– – 140 °C
1) Optical power measurements refer to a detector with NA = 0.6
2) Bedewing is excluded
SPL CGxx
(SFH 4804x2)
Semiconductor Group 2
Characteristics
(TA = 25 °C)
Parameter
Symbol Values Unit
min. typ. max.
Emission wavelength
1)
λ
peak
803
840
935
808
850
940
813
860
945
nm
Spectral width (FWHM)
1)
∆λ
2nm
Output power
2)
P
opt
1.0 W
Differential efficiency 2) 808 nm
850 nm
940 nm
η
0.75
0.75
0.70
0.95
0.85
0.80
1.1
1.0
0.9
W/A
Threshold current 808 nm
850 nm
940 nm
I
th
0.40
0.30
0.30
0.45
0.40
0.35
0.55
0.50
0.40
A
Operating current 1) 808 nm
850 nm
940 nm
I
op
1.3
1.3
1.4
1.5
1.5
1.6
1.8
1.8
1.8
A
Operating voltage
1)
V
op
2.0 V
Differential series resistance
r
s
– 0.2 0.4
Ω
Characteristic temperature (threshold)
3)
T
0
150 K
Temperature coefficient of operating
current
∂
I
op
/ ∂
T
0.5 %/K
Temperature coefficient of wavelength
4)
∂λ / ∂
T
0.25 0.27 0.30 nm/K
Thermal resistance (junction → heat sink)
R
th JA
10 K/W
1) Standard operating conditions refer to 1 W cw measured with NA = 0.6
2) Optical power measurements refer to a detector with NA = 0.6
3) Model for the thermal behavior of threshold current:
I
th
(
T
2
) =
I
th
(
T
1
) × exp(
T
2
–
T
1
)/
T
0
4) Depending on emission wavelength
Loading...