Siemens SPLBG81, SPLBG94, SPLBG98, SPLBS79, SPLBS81 Datasheet
...
Unmounted Laser Bars SPL Bxxx
20 W cw ... 100 W qcw
Features
• Unmounted monolithic linear array
• High efficiency MOVPE-grown quantum well structure
• Highly reliable strained layer InGa(Al)As/GaAs material
• Standard wavelength selection is ± 3 nm, others on
request
• Solderable p- and n-side metalization
Applications
• Pumping of solid state lasers (Nd: YAG, Yb: YAG, ...)
• Direct industrial applications (soldering, surface treatment, marking, ...)
• Heating, illumination
• Medical and printing application
Type
SPL BG81
SPL BG94
SPL BG98
SPL BS79
SPL BS81
SPL BS94
1) Other wavelengths in the range of 780 ... 980 nm are available on request.
Power Wavelength
25 W .. 30 W cw 808 nm
940 nm
980 nm
50 W .. 100 W qcw 794 nm
808 nm
940 nm
1)
Ordering Code
Q62702-P1654
Q62702-P1733
Q62702-P3259
Q62702-P3257
Q62702-P1719
Q62702-P3258
Semiconductor Group 1 / 2 1997-11-24
Characterictics
(TA = 25 °C)
SPL Bxxx
Parameter Symbol Wave-
length
Recommended output
power
1)
Catastrophic optical
damage limit
Threshold current
1), 2)
2)
Differential quantum
efficiency
2)
Total conversion efficiency 1)η
Beam divergence (FWHM) θ⊥ × θ
P
P
opt
COD
– 20 ... 30
≤ 808nm
≥ 940nm
I
th
– < 11 < 17 A
η – > 0.85 W/A
tot
– > 35 %
≤ 808nm
||
≥ 940nm
Standard pulse
wavelength
2), 3)
λ
pulse
≤ 808nm
≥ 940nm
Typical Values Unit
BGxx BSxx
50 ... 100
cw
> 80
> 130
qcw
> 110
> 200
45° × 12°
38° × 12°
802
934
804
935
W
W
Deg.
nm
Spectral width (FWHM) ∆λ –< 4nm
Fill factor
Emitter width
(Structure)
Pitch
Bar width
(Emitters per bar)
Cavity length
Bar thickness
1) Depending on mounting technique, i.e. on the resulting thermal resistance.
2) Calculated from measurements on one emitter of an unmounted bar (1 µs pulses at 1 kHz repetition
rate).
3) Differing pulse wavelengths are available on request.
F
w
p
W
L
H
–5080%
– 200
(20 × 3)
100
–
µm
µm
– 400 126 µm
– 10.0
25
10.0
77
mm
– 600 µm
– 115 ± 10 µm
Semiconductor Group 2 / 2 1997-11-24
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