siemens spd08p05 Datasheet

SIPMOS ® Power Transistor

• P channel

• Enhancement mode

• Avalanche rated

Preliminary data

SPD08P05 SPU08P05

Pin 1 Pin 2 Pin 3

G D S

Type

SPD08P05 -50 V -8 A 0.3 SPU08P05 -50 V -8 A 0.3

Maximum Ratings Parameter Symbol Values Unit

V

DS

I

D

R

DS(on

)

Ω Ω

Continuous drain current

T

= 30 °C

C

Pulsed drain current

T

= 25 °C

C

Avalanche energy, single pulse

I

= -8 A, VDD = -25 V, RGS = 25

D

L = 2.2 mH, T

= 25 °C

j

Ω

Gate source voltage V Power dissipation

T

= 25 °C

C

Operating temperature T Storage temperature T Thermal resistance, junction - case R Thermal resistance, junction - ambient (PCB mount)** R Thermal resistance, junction - ambient R

Package Ordering Code

P-TO252 Q67000-. . . - . . . P-TO251 Q67000-. . . - . . .

I

D

-8

I

Dpuls

-32

E

AS

70

±

GS

P

tot

20 V

40

j stg

thJC thJA thJA

-55 ... + 150 °C

-55 ... + 150

≤

3.1 K/W

≤

50

≤

100

A

mJ

W

IEC climatic category, DIN IEC 68-1 55 / 150 / 56

** when mounted on 1 " square PCB ( FR4 );for recommended footprint

Semiconductor Group 1 23/Jan/1998

Preliminary data

SPD08P05 SPU08P05

Electrical Characteristics,

Parameter Symbol Values Unit

Static Characteristics

Drain- source breakdown voltage

V

= 0 V, ID = -0.25 mA, Tj = 25 °C

GS

Gate threshold voltage

V

GS=VDS, ID

= 1 mA

Zero gate voltage drain current

V

= -50 V, VGS = 0 V, Tj = 25 °C

DS

V

= -50 V, VGS = 0 V, Tj = 125 °C

DS

Gate-source leakage current

V

= -20 V, VDS = 0 V

GS

Drain-Source on-resistance

V

= -10 V, ID = -5 A

GS

at Tj = 25°C, unless otherwise specified

min. typ. max.

V

(BR)DSS

-50 - -

V

GS(th)

-2.1 -3 -4

I

DSS

-

I

GSS

- -10 -100

R

DS(on)

- 0.25 0.3

-0.1

-10

V

µA

-1

-100 nA

Ω

Semiconductor Group 2 23/Jan/1998

Preliminary data

SPD08P05 SPU08P05

Electrical Characteristics,

Parameter Symbol Values Unit

Dynamic Characteristics

Transconductance

V

≥

2

DS

* ID * RDS(on)max, ID

Input capacitance

V

= 0 V, VDS = -25 V, f = 1 MHz

GS

Output capacitance

V

= 0 V, VDS = -25 V, f = 1 MHz

GS

Reverse transfer capacitance

V

= 0 V, VDS = -25 V, f = 1 MHz

GS

Turn-on delay time

V

= -30 V, VGS = -10 V, ID = -2.9 A

DD

R

= 50

G

Ω

Rise time

V

= -30 V, VGS = -10 V, ID = -2.9 A

DD

R

= 50

G

Ω

Turn-off delay time

V

= -30 V, VGS = -10 V, ID = -2.9 A

DD

R

= 50

G

Ω

Fall time

V

= -30 V, VGS = -10 V, ID = -2.9 A

DD

R

= 50

G

Ω

at Tj = 25°C, unless otherwise specified

min. typ. max.

g

fs

= 5 A

C

iss

1.5 2.3 -

- 750 1000

C

oss

- 270 400

C

rss

- 120 180

t

d(on)

- 20 30

t

r

- 110 170

t

d(off)

- 70 90

t

f

- 100 140

S

pF

ns

Semiconductor Group 3 23/Jan/1998

Preliminary data

SPD08P05 SPU08P05

Electrical Characteristics,

at Tj = 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Reverse Diode

Inverse diode continuous forward current

T

= 25 °C

C

Inverse diode direct current,pulsed

T

= 25 °C

C

Inverse diode forward voltage

V

= 0 V, IF = -16 A

GS

Reverse recovery time

V

= -30 V, I

R

F=lS, diF

/dt = 100 A/µs

Reverse recovery charge

V

= -30 V, I

R

F=lS, diF

/dt = 100 A/µs

I

V

t

Q

S

SM

SD

rr

A

- - -8

- - -32 V

- -1.25 -1.7 ns

- 90 -

rr

µC

- 0.23 -

Semiconductor Group 4 23/Jan/1998

Preliminary data

SPD08P05 SPU08P05

Power dissipation

P

= ƒ(TC)

tot

45

W

P

35

tot

30

25

20

15

10

5

0

0 20 40 60 80 100 120 °C 160

Drain current

ID = ƒ(TC)

parameter: V

-9

A

I

-7

D

-6

-5

-4

-3

-2

-1

0

0 20 40 60 80 100 120 °C 160

T

C

GS

≥

-10 V

T

C

Safe operating area

ID = ƒ(VDS)

parameter: D = 0.01, TC = 25°C

2

-10

A

I

D

1

-10

DS(on)

R

0

-10

-1

-10

0

-10

=

I

D

/

DS

V

1

-10

t

= 190.0µs

p

DC

1 ms

10 ms

V

-10

V

DS

Transient thermal impedance

Z

= ƒ(tp)

th JC

parameter: D = tp / T

1

10

K/W

Z

thJC

2

10

0

-1

D = 0.50

0.20

0.10

10

0.05

0.02

0.01

-2

-1

10

10 0 s

t

p

-2

single pulse

-3

-7

-6

-5

-4

10

-3

Semiconductor Group 5 23/Jan/1998

Preliminary data

SPD08P05 SPU08P05

Typ. output characteristics

ID = ƒ(VDS)

parameter: tp = 80 µs , T

-18

P

= 40W

tot

l

A

I

D

-14

-12

-10

-8

-6

-4

-2

0

0 -2 -4 -6 -8 -10 -12 -14 -16 V -19

= 25 °C

j

k

j

i

h

g

f

e

d

c

b

a

VGS [V]

a -4.0 b -4.5 c -5.0 d -5.5 e -6.0 f -6.5 g -7.0 h -7.5 i -8.0 j -9.0 k -10.0 l -20.0

V

DS

Typ. drain-source on-resistance

R

DS (on)

= ƒ(ID)

parameter: tp = 80 µs, Tj = 25 °C

0.9

a

b

c

d

e

f

R

DS (on)

g

Ω

0.7

0.6

0.5

0.4

0.3

0.2

V

[V] =

GS

0.1

a

b

c

d

e

-4.0

-4.5

-5.0

-5.5

-6.0

-6.5

0.0 0 -2 -4 -6 -8 -10 -12 A -16

-7.0

-7.5

f

g

-8.0

h

-9.0

h

i

-10.0

j

-20.0

i

j

I

D

Typ. transfer characteristics ID = f (VGS)

parameter: tp = 80 µs

≥

V

2 x

x R

ID

DS(on)max

-15 A

-13

-12

-11

-10

-9

-8

-7

-6

-5

-4

-3

-2

-1 0

0 -1 -2 -3 -4 -5 -6 -7 -8 V -10

I

DS

D

Typ. forward transconductance gfs = f (I

)

D

parameter: tp = 80 µs,

≥

V

2 x I

DS

g

fs

V

GS

x R

D

DS(on)max

4.0

S

3.2

2.8

2.4

2.0

1.6

1.2

0.8

0.4

0.0 0 -2 -4 -6 -8 -10 -12 A -15

I

D

Semiconductor Group 6 23/Jan/1998

Preliminary data

SPD08P05 SPU08P05

Drain-source on-resistance

R

DS (on)

= ƒ(Tj)

parameter: ID = -5 A, VGS = -10 V

0.70

Ω

0.60

R

0.55

DS (on)

0.50

0.45

0.40

0.35

0.30

0.25

0.20

0.15

0.10

0.05

0.00

-60 -20 20 60 100 °C 160

98%

typ

Gate threshold voltage

V

GS (th)

= ƒ(Tj)

parameter: VGS = VDS, ID = 1 mA

-4.6 V

-4.0

V

GS(th)

-3.6

-3.2

-2.8

-2.4

-2.0

-1.6

-1.2

-0.8

-0.4

0.0

-60 -20 20 60 100 °C 160

T

j

98%

typ

2%

T

j

Typ. capacitances

C = f (V

DS

)

parameter:VGS = 0V, f = 1MHz

4

10

pF

C

3

10

2

10

1

10

0 -5 -10 -15 -20 -25 -30 V -40

Forward characteristics of reverse diode

IF = ƒ(VSD)

parameter: Tj, tp = 80 µs

2

-10

A

I

F

1

-10

C

iss

C

oss

0

C

rss

V

DS

-10

Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%)

= 150 °C (98%)

T

j

-1

-10

0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0

V

SD

Semiconductor Group 7 23/Jan/1998

Preliminary data

SPD08P05 SPU08P05

Avalanche energy EAS = ƒ(Tj)

parameter: ID = -8 A, VDD = -25 V RGS = 25 Ω, L = 2.2 mH

75

mJ

65 60

E

AS

55 50 45 40 35 30 25 20 15 10

5 0

20 40 60 80 100 120 °C 160

Drain-source breakdown voltage

V

(BR)DSS

V

(BR)DSS

T

j

= ƒ(Tj)

-60 V

-58

-57

-56

-55

-54

-53

-52

-51

-50

-49

-48

-47

-46

-45

-60 -20 20 60 100 °C 160

T

j

Semiconductor Group 8 23/Jan/1998

Package Outlines

P-TO252 Dimension in mm

Preliminary data

SPD08P05 SPU08P05

P-TO251 Dimension in mm

Semiconductor Group 9 23/Jan/1998