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spd02n60
Datasheet
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siemens spd02n60 Datasheet

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Page 1
SIPMOS Power Transistor
• N-Channel
• Enhancement mode
Preliminary data
SPD02N60
SPU02N60
Pin 2 Pin 3Pin 1
G D S
Type
SPU02N60
Maximum Ratings, at Parameter Value Unit
Continuous drain current
T
= 25 °C
C
T
= 100 °C
C
T
= 25 °C
C
I
= 2 A,
D
T
= 25 °C
j
V
DD
= 50 V,
Gate source voltage
T
= 25 °C
C
V
DS
I
D
600 V 2 A
T
= 25 °C, unless otherwise specified
j
R
= 25 Ω,
GS
R
DS(on)
5.5 Ω
@ V
V
GS
GS
= 10 VSPD02N60
Symbol
I
D
I
Dpulse
E
AS
V
GS
P
tot
T
j
P-TO252 P-TO251
Ordering CodePackage
Q67040-S4133 Q67040-S4127-A2
2
1.3 8Pulsed drain current
±20
55
-55 ... +150
A
mJ135Avalanche energy, single pulse
V WPower dissipation
°COperating temperature
Storage temperature -55 ... +150
T
stg
55/150/56IEC climatic category; DIN IEC 68-1
Semiconductor Group 10 / 19981
Page 2
Electrical Characteristics
Preliminary data
SPD02N60
SPU02N60
Parameter
= 25 °C, unless otherwise specified
at
T
j
Thermal Characteristics
Thermal resistance, junction - ambient SMD version, device on PCB: @ min. footprint
2
@ 6 cm
cooling area1)
Static Characteristics
V
= 0 V,
GS
Gate threshold voltage,
I
= 1 mA
D
I
= 0.25 mA
D
V
GS
=
V
DS
Zero gate voltage drain current
V V
DS DS
= 600 V,
= 600 V,
V V
= 0 V,
GS
= 0 V,
GS
T
= 25 °C
j
T
= 150 °C
j
R
thJC
R
thJA
R
thJA
V
(BR)DSS
V
GS(th)
I
DSS
ValuesSymbol Unit
- K/WThermal resistance, junction - case
- 100 -
-
-
50 tbd
600 - -Drain- source breakdown voltage
32.1 4
-
-
0.1
-
max.typ.min.
2.25
-
-
1
100
V
µA
Gate-source leakage current
V
= 20 V,
GS
V
DS
= 0 V
Drain-Source on-state resistance
V
= 10 V,
GS
1
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air.
I
= 1.3 A
D
I
GSS
R
DS(on)
- nA10010
- 4.2 5.5
Ω
Semiconductor Group 10 / 19982
Page 3
Preliminary data
Electrical Characteristics Parameter Symbol UnitValues
SPD02N60
SPU02N60
= 25 °C, unless otherwise specified
at
T
j
Dynamic Characteristics
V
≥2*
I
*
V
V
DS
= 0 V,
GS
= 0 V,
GS
R
D
DS(on)max
V
V
= 25 V, f = 1 MHz
DS
= 25 V, f = 1 MHz
DS
,
I
= 1.3 A
D
Reverse transfer capacitance
V
V R
V R
GS
DD G
DD G
= 0 V,
= 30 V,
= 50 Ω
= 30 V,
= 50 Ω
V
= 25 V, f = 1 MHz
DS
V
= 10 V,
GS
V
= 10 V,
GS
I
= 1.5 A,
D
I
= 1.5 A,
D
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
min. max.typ.
-
40-
15 22-
-Turn-on delay time
10 15
-Rise time
-1 S1.8Transconductance
460 pF350Input capacitance
60Output capacitance
ns
4025
V R
V R
DD G
DD G
= 30 V,
= 50 Ω
= 30 V,
= 50 Ω
V
V
GS
GS
= 10 V,
= 10 V,
I
= 1.5 A,
D
I
= 1.5 A,
D
t
d(off)
t
f
35-
-
25
50Turn-off delay time
35Fall time
Semiconductor Group 10 / 19983
Page 4
Electrical Characteristics
Preliminary data
SPD02N60
SPU02N60
Parameter
= 25 °C, unless otherwise specified
at
T
j
Reverse Diode
Inverse diode continuous forward current
T
= 25 °C
C
T
= 25 °C
C
V
= 0 V,
GS
V
= 100 V,
R
I
= 4 A
F
I
F
=
I
, d
i
S
/dt = 100 A/µs
F
Reverse recovery charge
V
= 100 V,
R
=
I
l
, d
i
F
S
/dt = 100 A/µs
F
Symbol UnitValues
I
S
I
SM
V
t
rr
Q
-
-
SD
rr
-
- 8Inverse diode direct current,pulsed
0.85 1.4-Inverse diode forward voltage
300 450- nsReverse recovery time
2.3
max.min. typ.
2 A
V
3.45 µC-
Semiconductor Group 10 / 19984
Page 5
Preliminary data
SPD02N60
SPU02N60
Power Dissipation
P
= f (
T
SPD02N60
5
)
C
tot
P
tot
60
W
50 45 40 35 30 25 20 15 10
Drain current
I
= f (
T
2.4
A
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
)
C
V
SPD02N60
D
parameter:
D
I
GS
≥ 10 V
0
0 20 40 60 80 100 120
Safe operating area
I
= f (
V
D
DS
)
parameter : D = 0 ,
SPD02N60
1
10
A
I
/
0
10
D
I
-1
10
S
D
V
=
)
n
o
(
S
D
R
T
= 25 °C
C
D
°C
T
C
t
= 30.0µs
p
DC
160
100 µs
1 ms
10 ms
0.0 0 20 40 60 80 100 120
Transient thermal impedance
Z
= f(
t
SPD02N60
1
0
-1
-2
)
p
single pulse
t
/
T
p
thJC
parameter : D =
10
K/W
10
thJC
Z
10
10
°C
D = 0.50
0.20
0.10
0.05
0.02
0.01
160
T
j
-2
10
10
0
10
1
10
2
V
V
DS
10
3
Semiconductor Group 10 / 19985
10
-3
-7
-6
-5
-4
-3
10
10
10
10
10
10
-2
s
t
0
10
p
Page 6
Preliminary data
SPD02N60
SPU02N60
Typ. output characteristics
I
= f (
V
D
parameter:
5.0
4.0
3.5
D
3.0
I
2.5
2.0
1.5
1.0
0.5
0.0
)
DS
t
= 80 µs
p
SPD02N60
P
= 55W
tot
A
0 10 20 30 40
l
h
g
j
k
i
f
V
GS a 4.0
b 4.5
e
c 5.0 d 5.5 e 6.0 f 6.5
d
g 7.0 h 7.5 i 8.0 j 9.0 k 10.0
c
l 20.0
b
a
Drain-source on-resistance
R
DS(on)
parameter :
[V]
R
V
60
V
DS
= f (
T
)
j
I
= 1.3 A,
D
SPD02N60
26
Ω
22 20 18
DS(on)
16 14 12 10
8 6 4 2 0
-60 -20 20 60 100
98%
typ
V
GS
= 10 V
°C
180
T
j
Semiconductor Group 10 / 19986
Page 7
Preliminary data
SPD02N60
SPU02N60
Typ. transfer characteristics
parameter:
V
≥ 2 x
DS
4.0
A
3.0
2.5
D
I
2.0
1.5
1.0
0.5
t
p
I
x
D
= 80 µs
R
DS(on)max
I
D
= f (
V
GS
Gate threshold voltage
)
V
parameter :
GS(th)
5.2
V
4.4
4.0
3.6
GS(th)
3.2
V
2.8
2.4
2.0
1.6
1.2
0.8
0.4
= f (
T
)
j
V
GS
=
V
DS
,
I
= 1 mA
D
max
typ
min
0.0
0.0 1.0 2.0 3.0 4.0
Typ. capacitances
C
= f(
V
)
DS
Parameter:
4
10
pF
3
10
C
2
10
1
10
0
10
V
=0 V, f=1 MHz
GS
0 5 10 15 20 25 30
V
6.0
V
GS
0.0
-60 -20 20 60 100
V
160
T
j
Forward characteristics of reverse diode
I
= f (VSD)
F
parameter:
10
A
C
iss
C
oss
C
rss
V
40
V
DS
10
F
I
10
10
T
, tp = 80 µs
j
SPD02N60
1
0
-1
T
= 25 °C typ
j
T
= 150 °C typ
j
T
= 25 °C (98%)
j
T
= 150 °C (98%)
j
-2
0.0 0.4 0.8 1.2 1.6 2.0 2.4
V
3.0
V
SD
Semiconductor Group 10 / 19987
Page 8
Preliminary data
SPD02N60
SPU02N60
Avalanche Energy
parameter:
R
= 25 Ω
GS
140
mJ
120 110 100
90
AS
E
80 70 60 50 40 30 20 10
I
= 2 A,
D
0
20 40 60 80 100 120
E V
AS DD
= f (
T
j
= 50 V
)
Drain-source breakdown voltage
V
(BR)DSS
720
= f (
SPD02N60
T
)
j
V
680
660
(BR)DSS
V
640
620
600
580
560
°C
160
T
j
540
-60 -20 20 60 100
°C
180
T
j
Semiconductor Group 10 / 19988
Page 9
SPD02N60
Preliminary data
Edition 7.97 Published by Siemens AG, Bereich Halbleiter Vetrieb,
Werbung, Balanstraße 73, 81541 München
© Siemens AG 1997 All Rights Reserved.
Attention please!
As far as patents or other rights of third parties are concerned, liability is only assumed for components, not for applications, processes and circuits implemented within components or assemblies. The information describes a type of component and shall not be considered as warranted characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Semiconductor Group Offices in Germany or the Siemens Companies and Representatives worldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Siemens Office, Semiconductor Group. Siemens AG is an approved CECC manufacturer.
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Components used in life-support devices or systems must be expressly authorized for such purpose!
Critical components1 of the Semiconductor Group of Siemens AG, may only be used in life-support devices or systems2 with the express written approval of the Semiconductor Group of Siemens AG.
1)A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2)Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain and/or protecf human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
SPU02N60
Semiconductor Group 10 / 19989
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