siemens smbta06 Datasheet

NPN Silicon AF Transistor

CM

j

g

SMBTA 06

• High breakdown voltage

3

• Low collector-emitter saturation voltage

• Complementary type: SMBTA 56 (PNP)

1

VPS05161

Type Marking Ordering Code PackagePin Configuration

Q68000-A3428SMBTA 06 1=B 2=E 3=C SOT-23s1G

Maximum Ratings Parameter ValueSymbol Unit

Collector-emitter voltage V Collector-base voltage Emitter-base voltage

Peak collector current 1

V V V I I

C

CEO CBO EBO

500DC collector current

80 80

4

mA A

2

Base current mA Peak base current Total power dissipation,

T

= 79 °C

S

I

B

I

BM

P

tot

T

Storage temperature

T

st

100 200

330 mW 150 °CJunction temperature

-65 ... +150

Thermal Resistance

1)

Junction - soldering point

1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu

R R

thJA thJS

≤285 ≤215

K/WJunction ambient

Semiconductor Group

Jan-22-19991

SMBTA 06

Electrical Characteristics Parameter ValuesSymbol Unit

max.typ.min.

DC Characteristics

I

= 1 mA,

C

I

= 100 µA,

C

I

B

= 0

I

= 0

B

Emitter-base breakdown voltage

I

= 10 µA,

E

V

= 80 V,

CB

V

= 80 V,

CB

V

= 60 V,

CE

I

C

I

= 0

E

= 0 ,

E

= 0

B

T

= 150 °C

A

DC current gain 1)

I

= 10 mA,

C

I

= 100 mA,

C

V

CE

V

CE

= 1 V

V

(BR)CEO

V

(BR)CBO

V

(BR)EBO

I

CBO

I

CBO

I

CEO

h

FE

80 --

80Collector-base breakdown voltage

-

100

- -

- -4

- 100 nACollector cutoff current

-

130

100--

20Collector cutoff current

-

170

VCollector-emitter breakdown voltage

nACollector cutoff current

µA- -

-

Collector-emitter saturation voltage1)

I

= 100 mA,

C

I

= 10 mA

B

Base-emitter voltage 1)

I

= 100 mA,

C

V

CE

= 1 V

AC Characteristics

Transition frequency

I

= 20 mA,

C

V

= 5 V, f = 20 MHz

CE

Collector-base capacitance

V

= 10 V, f = 1 MHz

CB

V

CEsat

V

BE(ON)

f

T

C

cb

- - 1.25 V

- - 1.2

- 100 - MHz

- 12 - pF

1) Pulse test: t ≤ 300µs, D = 2% Semiconductor Group

Jan-22-19992

SMBTA 06

Total power dissipation

P

tot

* Package mounted on epoxy

= f (

T

*;

T

)

A

S

Collector current

V

= 1V

CE

I

C

= f (

V

BE

)

Permissible pulse load

P

totmax

/

P

totDC

= f (

t

)

p

Transition frequency

V

= 5V

CE

f

T

= f (

I

)

C

Semiconductor Group

Jan-22-19993

SMBTA 06

Base-emitter saturation voltage

I

= f (V

C

BEsat

),

h

= 10

FE

Collector-emitter saturation voltage

I

= f (

C

V

CEsat

),

h

FE

= 10

Collector cutoff current

V

= 80V

CB

I

CBO

= f (

T

)

A

DC current gain

V

= 1V

CE

h

= f (

I

FE

)

C

Semiconductor Group

Jan-22-19994