Siemens SFH620AA, SFH620AGB Datasheet
FEATURES
• High Current Transfer Ratios
at 5 mA: 50–600%
at 1 mA: 45% typical (>13)
• Low CTR Degradation
• Good CTR Linearity Depending on Forward
Current
• Isolation Test Voltage, 5300 VAC
• High Collector-Emitter Voltage, V
RMS
CEO
=70 V
• Low Saturation Voltage
• Fast Switching Times
• Field-Effect Stable by TRIOS (TRansparent IOn
Shield)
• Temperature Stable
• Low Coupling Capacitance
• End-Stackable, .100"(2.54 mm) Spacing
• High Common-Mode Interference Immunity
(Unconnected Base)
• Underwriters Lab File #52744
• VDE 0884 Available with Option 1
• SMD Option, See SFH6206 Data Sheet
DESCRIPTION
The SFH620AA/AGB features a high current transfer
ratio, low coupling capacitance and high isolation
voltage. These couplers have a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is
incorporated in a plastic DIP-4 package.
The coupling devices are designed for signal transmission between two electrically separated circuits.
The couplers are end-stackable with 2.54 mm spacing.
Creepage and clearance distances of >8 mm are
achieved with option 6. This version complies with
IEC 950 (DIN VDE 0805) for reinforced insulation up
to an operation voltage of 400 V
RMS
or DC.
SFH620AA/AGB
5.3 kV TRIOS Optocoupler
AC Voltage Input
Dimensions in Inches (mm)
2
1
.255 (6.48)
.268 (6.81)
3
4
.179 (4.55)
.190 (4.83)
.030 (.76)
.045 (1.14)
4°
typ.
.018 (.46)
.022 (.56)
Maximum Ratings
Emitter
Reverse Voltage..............................................................................±60 mA
Surge Forward Current (t
Total Power Dissipation.................................................................. 100 mW
Detector
Collector-Emitter Voltage.....................................................................70 V
Emitter-Collector Voltage........................................................................7 V
Collector Current...............................................................................50 mA
Collector Current (t
≤
P
Total Power Dissipation.................................................................. 150 mW
Package
Isolation Test Voltage between Emitter and
Detector, refer to Climate DIN 40046,
part 2, Nov. 74................................................................... 5300 VAC
Creepage.........................................................................................≥7 mm
Clearance.........................................................................................
Insulation Thickness between Emitter and Detector....................... 0.4 mm
Comparative Tracking Index
per DIN IEC 112/VDE0 303, part 1.................................................... 175
Isolation Resistance
V
=500 V, TA=25°C ...................................................................≥1012
IO
VIO=500 V, TA=100°C .................................................................≥1011
Storage Temperature Range................................................–55 to +150°C
Ambient Temperature Range............................................... –55 to +100
Junction Temperature........................................................................ 100
Soldering Temperature (max. 10 s. Dip Soldering
Distance to Seating Plane
pin one ID
Anode/
Cathode
Cathode/
.031 (.79) typ.
.050 (1.27) typ.
.130 (3.30)
.150 (3.81)
.020 (.508 )
.035 (.89)
.050 (1.27)
1.00 (2.54)
≤
10 µs).....................................................±2.5 A
P
Anode
1
2
.300 (7.62) typ.
3°–9°
10°
.008 (.20)
.012 (.30)
4
Collector
3
Emitter
.110 (2.79)
.130 (3.30)
.230 (5.84)
.250 (6.35)
1 ms).............................................................100 mA
RMS
≥
7 mm
°
°
≥
1.5 mm)............................................. 260°C
Ω
Ω
C
C
1
Characteristics
(TA=25°C)
Description Symbol Unit Condition
Emitter
Forward Voltage V
Capacitance C
Thermal Resistance R
F
0
thJA
1.25 (≤1.65) V IF=±60 mA
50 pF VR=0 V, f=1 MHz
750 K/W
Detector
Capacitance C
Thermal Resistance R
CE
thJA
6.8 pF VCE=5 V, f=1 MHz
500 K/W
Package
Collector-Emitter Saturation Voltage V
Coupling Capacitance C
Note: 1. Still air, coupler soldered to PCB or base.
Current T ransfer Ratio
(IC/IF at VCE=5 V)
and Collector-Emitter Leakage Current
CESA T
C
0.25 (≤0.4) V IF=10 mA, IC=2.5 mA
0.2 pF
Description AA AGB Unit
IC/ IF (IF=±5 mA) 50–600 100–600 %
Collector-Emitter Leakage Current, I
VCE=10 V
Switching Times
Linear Operation
(T ypical Values)
(saturated)
CEO
≤
100) 10 (≤100) nA
10 (
=5 mA
I
F
47 Ω
Turn-on Time t
Turn-off Time t
RL=1.9 Ω
I
C
ON
OFF
2.0
25
V
=5 V
CC
µ
s
µ
s
2
SFH620AA/AGB
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