Siemens PZTA92 Datasheet

PNP Silicon High-Voltage Transistors PZTA 92

PZTA 93

● High breakdown voltage

● Low collector-emitter saturation voltage

● Complementary types: PZTA 42, PZTA 43 (NPN)

Type Ordering Code

PZTA 92
PZTA 93

Marking

PZTA 92
PZTA 93

(tape and reel)

Q62702-Z2037
Q62702-Z2038

Pin Configuration

1 2 3 4

B C E C

Package

SOT-223

Maximum Ratings
Parameter Symbol Values Unit

PZTA 92 PZTA 93

Collector-emitter voltage VCE0 V
Collector-base voltage VCB0
Emitter-base voltage VEB0

300 200
300 200

5
Collector current IC mA500
Base current I
Total power dissipation, T

S = 124 ˚C

Junction temperature Tj ˚C
Storage temperature range T

B 100

tot W

P

1.5

150

stg

– 65 … + 150

1)

Thermal Resistance

Junction - ambient

2)

Junction - soldering point R

1)

For detailed information see chapter Package Outlines.

2)

Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.

Semiconductor Group 1

Rth JA ≤ 72 K/W

th JS ≤ 17

5.91

Electrical Characteristics

I
I
I

I

I

I

I

I

I

A = 25 ˚C, unless otherwise specified.

at T

DC characteristics

PZTA 92

PZTA 93

UnitValuesParameter Symbol

min. typ. max.

(BR)CE0

V

C = 1 mA, IB = 0 PZTA 92

PZTA 93

Collector-base breakdown voltage

C = 100 µA, IB = 0 PZTA 92

(BR)CB0

V

PZTA 93

V

Emitter-base breakdown voltage

E = 100 µA, IC = 0

Collector-base cutoff current

(BR)EB0 5––

I

CB0

VCB = 200 V PZTA 92

CB = 160 V PZTA 93

V

CB = 200 V, TA = 150 ˚C PZTA 92

V

CB = 160 V, TA = 150 ˚C PZTA 93

V

EB = 3 V, IC = 0

V

DC current gain

C = 1 mA, VCE = 10 V
C = 10 mA, VCE = 10 V
C = 30 mA, VCE = 10 V

Collector-emitter saturation voltage

C = 20 mA, IB = 2 mA PZTA 92

1)

1)

I

EB0 – – 100

FE

h

VCEsat

PZTA 93

Base-emitter saturation voltage

C = 20 mA, IB = 2 mA

1)

VBEsat – – 0.9

300
200

300
200

–
–
–
–

25
40
25

–
–

–
–

–
–

–
–
–
–

–
–
–

–
–

–
–

–
–

250
250
20
20

–
–
–

0.5

0.4

VCollector-emitter breakdown voltage

nA
nA

µA
µA

nAEmitter-base cutoff current

–

V

AC characteristics

f

T – 100 –

C = 20 mA, VCE = 10 V, f = 100 MHz

CB = 20 V, f = 1 MHz PZTA 92

V

PZTA 93

1)

Pulse test conditions: t ≤ 300µs,D = 2 %.

C

obo

–
–

–
–

6
8

MHzTransition frequency

pFCollector-base capacitance

Semiconductor Group 2